• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.711-715
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• 2007

Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

• Journal of Powder Materials
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• v.30 no.4
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• pp.339-345
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• 2023

This study investigates the melting point and brazing properties of the aluminum (Al)-copper (Cu)-silicon (Si)-tin (Sn) alloy fabricated for low-temperature brazing based on the alloy design. Specifically, the Al-20Cu-10Si-Sn alloy is examined and confirmed to possess a melting point of approximately 520℃. Analysis of the melting point of the alloy based on composition reveals that the melting temperature tends to decrease with increasing Cu and Si content, along with a corresponding decrease as the Sn content rises. This study verifies that the Al-20Cu-10Si-5Sn alloy exhibits high liquidity and favorable mechanical properties for brazing through the joint gap filling test and Vickers hardness measurements. Additionally, a powder fabricated using the Al-20Cu-10Si-5Sn alloy demonstrates a melting point of around 515℃ following melting point analysis. Consequently, it is deemed highly suitable for use as a low-temperature Al brazing material.

• Journal of Powder Materials
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• v.22 no.4
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• pp.240-246
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• 2015

Anodic aluminum oxide (AAO) has been widely used for the development and fabrication of nano-powder with various morphologies such as particle, wire, rod, and tube. So far, many researchers have reported about shape control and fabrication of AAO films. However, they have reported on the shape control with different diameter and length of anodic aluminum oxide mainly. We present a combined mild-hard (or hard-mild) anodization to prepare shape-controlled AAO films. Two main parameters which are combination mild-hard (or hard-mild) anodization and run-time of voltage control are applied in this work. The voltages of mild and hard anodization are respectively 40 and 80 V. Anodization was conducted on the aluminum sheet in 0.3 mole oxalic acid at $4^{\circ}C$. AAO films with morphologies of varying interpore distance, branch-shaped pore, diameter-modulated pore and long funnel-shaped pore were fabricated. Those shapes will be able to apply to fabricate novel nano-materials with potential application which is especially a support to prevent volume expansion of inserted active materials, such as metal silicon or tin powder, in lithium ion battery. The silicon powder electrode using an AAO as a support shows outstanding cycle performance as 1003 mAh/g up to 200 cycles.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.1-5
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• 2003

The multi-layered OELDs(organic electroluminescent devices) were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The $Alq_3$ (tris-(8-hydroxyquinoline)aluminum) low molecule compound was used as the light emission layer. TPD(triphenyl-diamine) and $\alpha-NPD$ were used as the hole transport layer. CuPc (Copper phthalocyanine) was also used as the hole injection layers. In addition, QD2 (quinacridone2) organic material with $10\AA$ thickness was deposited in the $Alq_3$ emission layer to improve the luminance efficiency. The threshold voltage was about 7V for all devices. The luminance and efficiency of devices was improved by substitution the $\alpha-NPD$ for TPD as the hole as the hole transport layer. The luminance efficiency of the OELD sample with QD2 thin film in the $Alq_3$ emission layer was found to be 1.55 lm/W, which is about 8 times larger value compared to the sample without QD2 thin layer.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.14-17
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• 2014

In this paper, indium reduced materials for transparent conductive electrodes (TCE) were fabricated and their physical properties were evaluated. Two of materials, indium-zinc-tin oxide (IZTO) and aluminum (Al) were selected as TCE materials. In case of IZTO nanoparticles, composition ratios of In, Zn and Sn is 8:1:1 were synthesized. Size of the synthesized IZTO nanoparticles were less than 10 nm, and specific surface areas were about $90m^2/g$ indicating particle sizes are very fine. Also, the IZTO nanoparticles were well crystallized with (222) preferred orientation despite it was synthesized at the lowered temperature of $300^{\circ}C$. Composition ratios of In, Zn and Sn were very uniform in accordance with those as designed. Meanwhile, Al was deposited onto glass by sputtering in a vacuum chamber for mesh architecture. The Al was well deposited onto the glass, and no pore was observed from the Al surface. The sheet resistance of Al on glass was about $0.3{\Omega}/{\square}$ with small deviation of $0.025{\Omega}/{\square}$, and adhesion was good on the glass substrate since no pelt-off part of Al was observed by tape test. If the Al mesh is combined with ink coated layer which is consistent of IZTO nanoparticles, it is expected that the good and reliable metal mesh architecture for TCE will be formed.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.7-7
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• 2001

The increasing interest in light weight materials coupled to the need for cost -effective processing have combined to create a significant opportunity for aluminum P/M. particularly in the automotive industry in order to reduce fuel emissions and improve fuel economy at affordable prices. Additional potential markets for Al PIM parts include hand tools. Where moving parts against gravity represents a challenge; and office machinery, where reciprocating forces are important. Aluminum PIM adds light weight, high compressibility. low sintering temperatures. easy machinability and good corrosion resistance to all advantages of conventional iron bm;ed P/rv1. Current commercial alloys are pre-mixed of either the AI-Si-Mg or AL-Cu-Mg-Si type and contain 1.5% ethylene bis-stearamide as an internal lubricant. The powder is compacted in closed dies at pressure of 200-500Mpa and sintered in nitrogen at temperatures between $580~630^{\circ}C$ in continuous muffle furnace. For some applications no further processing is required. although most applications require one or more secondary operations such as sizing and finishing. These sccondary operations improve the dimension. properties or appearance of the finished part. Aluminum is often considered difficult to sinter because of the presence of a stable surface oxide film. Removal of the oxide in iron and copper based is usually achieved through the use of reducing atmospheres. such as hydrogen or dissociated ammonia. In aluminum. this occurs in the solid st,lte through the partial reduction of the aluminum by magncsium to form spinel. This exposcs the underlying metal and facilitates sintering. It has recently been shown that < 0.2% Mg is all that is required. It is noteworthy that most aluminum pre-mixes contain at least 0.5% Mg. The sintering of aluminum alloys can be further enhanced by selective microalloying. Just 100ppm pf tin chnnges the liquid phase sintering kinetics of the 2xxx alloys to produce a tensile strength of 375Mpa. an increilse of nearly 20% over the unmodified alloy. The ductility is unnffected. A similar but different effect occurs by the addition of 100 ppm of Pb to 7xxx alloys. The lend changes the wetting characteristics of the sintering liquid which serves to increase the tensile strength to 440 Mpa. a 40% increase over unmodified aIloys. Current research is predominantly aimed at the development of metal matrix composites. which have a high specific modulus. good wear resistance and a tailorable coefficient of thermal expnnsion. By controlling particle clustering and by engineering the ceramic/matrix interface in order to enhance sintering. very attractive properties can be achicved in the ns-sintered state. I\t an ils-sintered density ilpproaching 99%. these new experimental alloys hnve a modulus of 130 Gpa and an ultimate tensile strength of 212 Mpa in the T4 temper. In contest. unreinforcecl aluminum has a modulus of just 70 Gpa.

• The Journal of Korean Academy of Prosthodontics
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• v.34 no.3
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• pp.620-631
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• 1996

Bonding of resin to cast alloy has traditionally been provided by mechanical retention. But, chemical bonding methods such as silicoating, tin plating, heat treatment, application of 4-META adhesives, have been developed to overcome the problems of the mechanical bonding methods. Silicoating has been used availaby in fixed prosthodontics, but is also reported to be used in removable prosthodontics. The aim of this study is to measure the tensile bond strength between resin and metal, and compare the effect of the type of metal and the grain size of the aluminum oxide on the bond strength, after metal surface roughening, coating of the opaque resin, and curing of heat-curing resin were performed. The test groups were divided into 4 groups according to the cast alloys and the aluminum oxide particles used. Group 1 : Type 4 gold alloy(DM66) blasted with $$50{\mu}m\;Al_{2}O_3$$ Group 2 : Type 4 gold alloy(DM66) blasted with $$250{\mu}m\;Al_{2}O_3$$, Group 3 : Co-Cr alloy(Nobilium) blasted with $$50{\mu}m\;Al_{2}O_3$$ Group 4 : Co-Cr alloy(Nobilium) blasted with $$250{\mu}m\;Al_{2}O_3$$ * 10 test specimens were made on each group. The specimens were thermocycled, and Instron Universal testing machine was used to measure the tensile bond strength of the finished specimens. The results were as follows : 1. Bond strengths showed that the group of gold alloy blasted with $250{\mu}m$ aluminum oxide particle had higher bond strength, and the group of gold alloy blasted with $50{\mu}m$ aluminum oxide particles had lower bond strength than any of the other groups. 2. Gold alloy had significantly higher bond strength when blasted with $250{\mu}m$ aluminum oxide particles than $50{\mu}m$, but. Co-Cr alloy showed no statistically significant difference between the two particle sizes. 3. When blasted with $50{mu}m$ aluminum oxide particles, Co-Cr alloy showed significantly higher bond strength than gold alloy. And, when blasted with $250{\mu}m$ aluminum oxide particles, gold alloy had significantly higher bond strength than Co-Cr alloy. 4. On the examination of the fractured sites, only the group of Co-Cr alloy blasted with $50{\mu}m$ aluminum oxide particles showed a part of residual opaque resin, but all the samples of the other groups fractured between the resin and the metal.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.91-94
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• 2022

Top emission organic light-emitting diode is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device. Unlike BEOLED, TEOLED contain semi-transparent metal cathode. Because of semi-transparent cathode, micro cavity effect occurs in TEOLED. We optimized this effect by changing the thickness of hole injection layer. Device consists of is indium-tin-oxide / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine (x nm) / tris-(8-hydroxyquinoline) aluminum (50nm) / LiF(0.5nm) / Mg:Ag (1:9), and we changed NPB thickness which is used as HTL in our device in order to study how micro cavity effects are changed by optical path. As the results, NPB thickness at 35nm showed the current efficiency of 8.55Cd/A.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.