• 제목/요약/키워드: Tin Oxide

검색결과 1,377건 처리시간 0.031초

고휘도 유기발광소자 제작 및 특성 (Characteristics and fabrications of high brightness organic light emitting diode(OLED))

  • 장윤기;이준호;남효덕;박진호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.316-319
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    • 2001
  • Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 $cd/m^{2}$ at 8 V

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진공에서 열처리된 ITO 박막의 특성 (Properties of indium tin oxide thin films annealed in vacuum)

  • 이임연;이기암
    • 한국광학회지
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    • 제11권3호
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    • pp.152-157
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    • 2000
  • 전자빔 증착된 Indium Tin Oxide(ITO) 박막의 진공 열처리 효과를 알아보기 위해 진공 및 대기 중에서 열처리 온도( $200-335^{\circ}C$) 및 산소 분압 변화($1\times^10^{-5}-1$\times10^{-4} torr$)에 따른 투과율과 면-저항의 변화 및 결정구조를 조사하였다. 시편은 (222) 계열의 면의로 우세 배향된 다결정박막이다. 진고 열처리 변수를 적절하게 조절하여 $62\Omega/\box$의 면저항과 99%(500nm) 이상의 투과율을 가지는 고품질의 박막을 얻을 수 있었다.

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${\gamma}$-FIB를 이용한 산소 유량에 따른 ITO (Indium Tin Oxide)의 Energy Band Structure 측정

  • 이경애;김동해;권기청;엄환섭;최은하
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.191-191
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    • 2011
  • 최근 투명전극 연구는 태양전지 및 디스플레이, LED 등 많은 분야에서 응용되며 또한 기술 개발이 활발하다. 그 중 전기 전도도가 우수하면서 밴드갭이 2.5 eV 이상으로 가시광 영역에서 투명하기 때문에 디스플레이의 투명전극으로 ITO (Indium Tin Oxide)가 많이 사용되고 있다. 본 실험에서는 RF magnetron sputtering법을 이용한 ITO의 증착시 산소 유량을 달리하여 제작한 박막의 Energy Band Structure를 ${\gamma}$-FIB system을 이용하여 측정하였다. ITO에 이온화 에너지가 24.5 eV인 He Ion source를 주사하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 ITO 내의 Energy Band Structure를 실험적으로 측정하였다.

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Prussian blue가 전착된 indium tin oxide 전극을 이용한 전기화학적 검출기 (An Electrochemical Detector Using Prussian Blue Electrodeposited Indium Tin Oxide Electrode)

  • 이인제;김주호;강치중;김용상
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권10호
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    • pp.449-452
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    • 2005
  • We fabricated an electrochemical detector (ECD) to catalyze redox reaction efficiently by electrodepositing Prussian blue (PB) on the indium tin oxide (ITO) electrode. Capillary electrophoresis (CE) and amperometric method were used. We investigated the PB surface properties by topography from atomic force microscopy (AFM). Also PB film thickness calibration with respect to deposition time and voltage was used to get better PB surFace. The PB thin film of dense and smooth surface could catalyze redox reaction efficiently. Comparing with CE-ECD microchip using bare-lTO electrode, proposed CE-ECD microchip using PB deposited electrode has shown better sensitivity by determining the detected peak current from the electropherograms while the concentration of tested analyzes was maintained the same. It is verified that detection limit can be lowered for 0.01 mM of dopamine and catechol respectively.

Fabrication and Characteristics of Indium Tin Oxide Films on Polycarbonates CR39 Substrate for OTFTs

  • Kwon, Sung-Yeol
    • 한국재료학회지
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    • 제17권4호
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    • pp.232-235
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    • 2007
  • Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

Ozone Assisted-MOCVD로 제작된 산화주석막의 전기적 광학적 특성 (Electrical and Optical Properied of Tin Oxide Films Prepared by Ozone Assisted-MOCVD)

  • 배정운;이상운;송국현;박정일;박광자;염근영
    • 한국표면공학회지
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    • 제31권2호
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    • pp.109-116
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    • 1998
  • Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

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신경회로망을 이용한 ITO 박막 성장 공정의 모형화 (Modeling of Indium Tin Oxide(ITO) Film Deposition Process using Neural Network)

  • 민철홍;박성진;윤능구;김태선
    • 한국전기전자재료학회논문지
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    • 제22권9호
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    • pp.741-746
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    • 2009
  • Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

Characteristics of Laser Direct Patterned Indium Tin Oxide Layer by Overlapping Rates of Laser Beam

  • Li, Zhao-Hui;Ahn, Min-Hyung;Choi, Kyung-Min;Im, Seung-Hyeok;Jung, Kyung-Seo;Cho, Eou-Sik;Kwon, Sang-Jik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1496-1499
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    • 2009
  • A diode-pumped Nd:$YVO_4$ laser was used to obtain indium tin oxide (ITO) patterns on glass substrate with various overlapping rates. The results showed that the overlapping rate of laser beam influences on the edge structure of ITO pattern and the surface roughness of ablated groove bottom. At a laser repetition rate of 40 kHz, the optimized condition of overlapping rate was 75 %.

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Effect of Different Pretreatments on Indium-Tin Oxide Electrodes

  • Choi, Moonjeong;Jo, Kyungmin;Yang, Haesik
    • Bulletin of the Korean Chemical Society
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    • 제34권2호
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    • pp.421-425
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    • 2013
  • The effect of pretreatment on indium-tin oxide (ITO) electrodes has been rarely studied, although that on metal and carbon electrodes has been enormously done. The electrochemical and surface properties of ITO electrodes are investigated after 6 different pretreatments. The electrochemical behaviors for oxygen reduction, $Ru(NH_3){_6}^{3+}$ reduction, $Fe(CN){_6}^{3-}$ reduction, and p-hydroquinone oxidation are compared, and the surface roughness, hydrophilicity, and surface chemical composition are also compared. Oxygen reduction, $Fe(CN){_6}^{3-}$ reduction, and p-hydroquinone oxidation are highly affected by the type of the pretreatment, whereas $Ru(NH_3){_6}^{3+}$ reduction is almost independent of it. Interestingly, oxygen reduction is significantly suppressed by the treatment in an HCl solution. The changes in surface roughness and composition are not high after each pretreatment, but the change in contact angle is substantial in some pretreatments.

Fabrication and Characteristics of High-performance Doped-$SnO_2$ Thin Films for Explosive Gas Sensor

  • Chwa, Sang-Ok;Park, Hee-Chan;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • 제2권2호
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    • pp.83-88
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    • 1996
  • Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

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