• Title/Summary/Keyword: Time to breakdown

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V-t Characteristics and Survival Probability of Turn-to-Turn Models for HTS Transformer (고온초전도 변압기를 위한 턴간 모델의 V-t 특성 및 생존 확률)

  • Baek, Seung-Myeong;Cheon, Hyeon-Gweon;Nguyen, Van-Dung;Seok, Bok-Yeol;Kim, Sang-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.356-362
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    • 2004
  • Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

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Analysis of Gate-Oxide Breakdown in CMOS Combinational Logics

  • Kim, Kyung Ki
    • Journal of Sensor Science and Technology
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    • v.28 no.1
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    • pp.17-22
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    • 2019
  • As CMOS technology scales down, reliability is becoming an important concern for VLSI designers. This paper analyzes gate-oxide breakdowns (i.e., the time-dependent dielectric-breakdown (TDDB) aging effect) as a reliability issue for combinational circuits with 45-nm technology. This paper shows simulation results for the noise margin, delay, and power using a single inverter-chain circuit, as well as the International Symposium on Circuits and Systems (ISCAS)'85 benchmark circuits. The delay and power variations in the presence of TDDB are also discussed in the paper. Finally, we propose a novel method to compensate for the logic failure due to dielectric breakdowns: We used a higher supply voltage and a negative ground voltage for the circuit. The proposed method was verified using the ISCAS'85 benchmark circuits.

Development of Work Breakdown Structure and Analysis of Precedence Relations by Activity in School Facilities Construction Work (학교시설 건설공사의 작업분류체계 구축 및 단위작업별 선후행 관계 분석)

  • Bang, Jong-Dae;Sohn, Jeong-Rak
    • Land and Housing Review
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    • v.8 no.3
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    • pp.189-200
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    • 2017
  • The work breakdown structure and the precedence relations by work activity are very important because they are the basic data for estimating the construction duration in the construction work. However, there is no standard to accurately estimate the construction duration since the size of the school facilities construction is smaller than the general construction work. Therefore, some schools are unable to open in March or September and the delay of the construction duration can cause damage to the students. To solve this problem, this study developed a work breakdown structure of school facilities construction work and analyzed the precedence relations by work activities. The work breakdown structure of the school facilities construction is composed of three steps. The operations corresponding to level 1 and level 2 are as follows. (1) 2 preparatory work categories; preparation period and temporary construction. (2) 17 architectural work categories; temporary construction, foundation & pile work, reinforced concrete work, steel roof work, brick work, plaster work, tile work, stone work, waterproof construction, wood work, interior construction, floor work, metal work, roof work, windows construction, glazing work and paint construction. (3) 7 mechanic and fire work categories; outside trunk line work, plumbing work, air-conditioning equipment work, machine room work, city gas plumbing work, sanitation facilities and inspection & test working. (4) 4 civil work categories; wastewater work, drainage work, pavement work and other work. (5) 1 landscaping work categories; planting work. The work breakdown structure was derived from interviews with experts based on the milestones and detailed statements of existing school facilities. The analysis of precedence relations by school facilities work activity utilized PDM(Precedence Diagramming Method)which does not need a dummy and the relations were applied using FS(Finish to Start), FF(Finish to Finish), SS(Start to Start), SF(Start to Finish). The analysis of this study shows that if one work activity is delayed, the entire construction duration may be delayed because the majority of the works are FS relations. Therefore, it is necessary to use the Lag at the appropriate time to estimate the standard construction duration of the school facility construction. Lag is a term used only in the PDM method and it is used to define the relationship between the predecessor and the successor in creating the network milestone. And it means the delay time applied to the two work activities. The results of this study can reasonably estimate the standard construction duration of school facilities and it will contribute to the quality of the school facilities construction.

A study on the effect of additives in insulating oil under uniform electric field (평등전계중의 절연유에 미치는 첨가물의 영향)

  • 국상훈
    • 전기의세계
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    • v.30 no.6
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    • pp.357-365
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    • 1981
  • When electronegative gas SF$_{6}$ is dissolved and charged with insulating oil, the effect caused in the process by electronegative characteristic is studied and also the pressure effect caused by electronegative SF$_{6}$ acting on the liquid-level is examined respectively. When inert gas Ar is used to find a pressure effect acting on the liquid-level, its effect on dielectric strength is considered in the experiment. With three kinds of impulse voltage different in the duration of wave front and wave tail, a brief experiment if carried out ot see the effects on the dielectric breakdown characteristic as the wave is changing; either if I$_{2}$ and SF$_{6}$ are added to the insulating oil, or if the oil pressure is increased by Ar the dielectric strength becomes great and the longer the duration of wave front is, the greater the increase of the breakdown voltage, because I$_{2}$ added by a small quantity brings about some hirderance in the formation of gas phase. Likewise, the greater the changed pressure is, the greater the incerase of the breakdown voltage. When SF$_{6}$ is charged, the electronegative characteristic is prevailing at the time of low balanced pressure, and the pressure effect at the time of high balanced pressure.ressure.

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RTA Post-treatment of Thermal T${a_2}{O_5}$ Thin Films (열산화 T${a_2}{O_5}$박막에 미치는 RTA후처리의 영향)

  • Mun, Hwan-Seong;Lee, Jae-Seok;Han, Seong-Uk;Park, Sang-Gyun;Yang, Seung-Ji;Lee, Jae-Cheon;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.3 no.3
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    • pp.310-315
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    • 1993
  • The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

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An Analysis of Tree Growth in the XLPE Interface (가교폴리에틸렌 계면에서의 트리성장 분석)

  • Kim, Cheol-Woon;Park, Hyun-Bin;Kim, Tae-Sung;Lee, Joon-Ung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.2
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    • pp.90-94
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    • 1998
  • This study aims at analyzing to treeing in the solid-solid interface which is insulation type of cable junction parts, the proceeding of tree-growth and electrical breakdown were research in the study. Interface was made artificially to detect how it influenced the insulating ability of the whole system, the specimen were XLPE generally used in cable. The interface conditions were divided into two parts. First condition being the one focused on the surface of interface, it was treated with sand paper (#80, #600, #1200). For the second condition, the pressure of interface was varied as the value of 1, 5, 10 [$kg/cm^2$]. Using above conditions, treeing and breakdown properties on tree-growth were respectively compared in details. As a result, breakdown time was shorter for the full range of supplied voltage in the case of interface existed in the joint than non-existed interface. In the case of existed interface, the interface which had high-interface pressure and painted with silicon insulating oil was the best in the aspect of breakdown characteristics.

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Precision exploration of space resources using laser-induced breakdown spectroscopy (레이저 유도 플라즈마 분광분석법을 활용한 정밀 우주 자원 탐사)

  • Choi, Soo-Jin;Yoh, Jai-Ick
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.39 no.5
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    • pp.451-457
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    • 2011
  • A short laser pulse irradiates a sample to create the highly energetic plasma that emits light of a specific wavelength peak according to the material. By identifying different peaks for the analyzed samples, its chemical composition can be rapidly determined. The LIBS (Laser-Induced Breakdown Spectroscopy) has great advantages as an elemental analyzer on board a space rover, namely real-time rapid analysis and stand-off detection. The LIBS signal intensity is remarkably increased by using double-pulse LIBS system for component analysis of lunar environments where the surrounding pressure is low. Also the angle of target is adjusted for replicating arbitrary shapes of the specimen.

A Study on Phenomena of Watertree and Dielectric Breakdown in XLPE (XLPE의 수트리와 절연파괴 현상에 관한 연구)

  • Lee, Sung-Il;Ryu, Sung-Lim;Park, Il-Kyu;Lee, Ho-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.262-265
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    • 2001
  • In order to investigate the water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at $50^{\circ}C\sim100^{\circ}C$. and the water tree property has been correlated with voltage and temperature in this study. The leakage current was shown to increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was shown to decrease and reach to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

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A Study on Phenomena of Watertree and Dielectric Breakdown in XLPE (XLPE의 수트리와 절연파괴 현상에 관한 연구)

  • 이성일;류성림;박일규;이호식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.262-265
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    • 2001
  • In order to investigate the water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at 50$^{\circ}C$∼100$^{\circ}C$, and the water tree property has been correlated with voltage and temperature in this study. The leakage current was shown to increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was shown to decrease and reach to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

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Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode (트랜치 에미터 전극을 이용한 수직형 NPI 트랜치 게이트 IGBT의 전기적 특성 향상 연구)

  • Lee Jong-Seok;Kang Ey-Goo;Sung Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.10
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    • pp.912-917
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    • 2006
  • In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.