• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.5
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• pp.269-277
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• 1999

In this paper, a novel dead time minimization algorithm is proposed for improving the output waveform of an inverter. The adverse effects of the dead time are mainly described by the voltage drop and the distortion factor of waveforms. The principle of the proposed algorithm is organized with forbidding unnecessary firings fo the inverter switches which are not conducted even though the gate signal is impressed. The proposed methods are explained with the conduction mode of output currents. The H/W and S/W implementation method of the proposed algorithm are also presented. The validity of the proposed algorithm is verified by comparing the simulation and experimental results with conventional methods. It can be concluded from the results that the proposed algorithm has the advantage which is able to reduce the harmonics in the output voltages and which the output voltage can nearly be equal to the reference value. Another advantage of the proposed method is the reduction of total numbers of switching so that the switching losses of inverter drives can be minimized.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1152-1154
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• 2002

In this paper, a direct torque control method of an induction motor is proposed which enables constant switching frequency. The switching strategy of a conventional direct torque control scheme which is based on hysteresis comparator results in a variable switching frequency which depends on the speed, flux, stator voltage and hysteresis band of the comparator. This paper proposes a new switching strategy which determine the effective switching time on each switching period by comparing the ascending and descending torque slopes. The simulation results are presented to verify this proposed scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.67-70
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• 1995

Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.12
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• pp.137-144
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• 1994

In this paepr, we present a soft switching PWM inverter as reducing switching loss and stress at high power application. The PWM inverter is designed by space voltage about 2$\sqrt{3}$ times (15%) than conventional SPWM method. To reduce switching loss and stress. The DC link requires a capacitor, an inductor and two additional switches. Therefore proposed inverter performs trun PWM operation under the soft switching condition. As a result of soft switching we can reduce switching loss and ensure stability of switching devices. For approach to real time, control system is realized by 8 bit single-chip microprocessor. Therefore, we can construct system is with simplified volumn and structure by eliminating carrier wave and referrence wave generator of conventional SPWM method.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.901-907
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• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.36S no.11
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• pp.120-127
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• 1999

The dead time which is inserted in switching signals of PWM voltage source inverters distorts its output. As a result, the deviations of real fundamental voltage and phase compared with the reference are occurred. And also the harmonics on its output are increased. In this paper, numerical analysis of the distorted voltage on the output of inverter caused by switching dead time is performed. With the calculation results, the fundamental voltage gain and phase deviations according to the modulation index, load displacement factor and dead time are presented.

• Journal of Information Display
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• v.5 no.1
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• pp.34-40
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• 2004

Time resolved infrared IR absorption spectroscopy is carried out to investigate the dynamics of electric field induced reorientation of the biphenyl molecular core and alkyl tail sub-fragments of the nematic liquid crystal 5CB (4-pentyl-4-cyano-biphenyl). The planar to homeotropic transition for high pre-tilt planar aligned cells, is studied for switching times ranging from 200 ${\mu}sec$ down to 80 ${\mu}sec$, the latter a factor of 1000 times faster than any previous nematic IR study. The reorientation rates of the core and tail are found to be the same to within experimental error and scale inversely with applied field squared, as expected for the balance of field and viscous torques. Thus any molecular conformation change during switching must relax on a shorter time scale. A simple model shows that no substantial differences exist between the reorientational dynamics of the tails and cores on the time scales longer than on the order of 10 ${\mu}s$.

• The Journal of Information Systems
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• v.8 no.1
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• pp.93-108
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• 1999

The switching system is designed and developed to satisfy the performance design objectives recommended by ITU for call processing capacity and quality of service(QOS), etc. When the results by actual measurement at the system testing phase do not satisfy the performance design objectives, however, an effort is required to improve the performance. This paper presents a method for improving QOS by modifying the application programs for the switching system. In the proposed method, the sequence chart related to a delay time for call connection is modelled using PERT(Program Evaluation and Review Technique) network. Then, the criticality index of a message is calculated using Monte Carlo simulation to evaluate which message's processing time to decrease in order to decrease the delay time and thus to improve QOS. The criticality index of a block is also calculated to identify those software blocks that significantly contribute to the delay time.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.815-817
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• 1993

In this paper, it is considered spike voltage that is generated by ignoring the recovery time of switching device, turn on and turn off time. In the same principle, this spike voltage will be applicable to diode recovery time. The spike voltage causes to break down insulation of input transformer. So, we will show how to remove spike voltage by optimizing value of R and C and using switching diode which have fast recovery time.