• Economic and Environmental Geology
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• v.56 no.3
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• pp.259-275
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• 2023

Pan African granitoids of Kaiama is comprised of K-feldspar rich granites, porphyritic granites, and granitic gneiss that are intruded by quartz veins and aplitic veins and dykes which trend NE-SW. In order to establish the geochemical signatures, petrogenesis, and tectonic settings of the lithological units, petrological, petrographical, and geochemical studies was carried out. Petrographic analysis reveals that the granitoids are dominantly composed of quartz, plagioclase feldspar, biotite, and k-feldspar with occasional muscovites, sericite, and opaque minerals that constitute very low proportion. Major, trace, and rare earth elements geochemical data reveal that the rocks have moderate to high silica (SiO₂=63-79.7%) and alumina (Al₂O₃=11.85-16.15) contents that correlate with the abundance of quartz, feldspars, and biotite. The rocks are calc-alkaline, peraluminous (ASI=1.0-<1.2), and S-type granitoids sourced by melting of pre-existing metasedimentary or sedimentary rocks containing Al, Na, and K oxides. They plot dominantly in the WPG and VAG fields suggesting emplacement in a post-collisional tectonic setting. On a multi-element variation diagram, the granitoids show depletion in Ba, K, P, Rb, and Ti while enrichment was observed for Th, U, Nd, Pb and Sm. Their rare-earth elements pattern is characterized by moderate fractionation ((La/Yb)_N=0.52-38.24) and pronounced negative Eu-anomaly (Eu/Eu^*=0.02-1.22) that points to the preservation of plagioclase from the source magma. Generally, the geochemical features of the granitoids show that they were derived by the partial melting of crustal rocks with some input from greywacke and pelitic materials in a typical post-collisional tectonic setting.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.458-464
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• 2006

The Pd-Ni-Ag alloy composite membrane using modified porous stainless steel (PSS) as a substrate was prepared by a electroless plating technique. In this work, we have introduced the intermediate layer between Pd-based alloy and a metal substrate. As an intermediate layer, the mixtures of nickel powder and inorganic sol such as $SiO_{2}$ sol, $Al_{2}O_{3}$ sol, and $TiO_{2}$ sol were used. The intermediate layers were coated onto a PSS substrate according to various membrane preparation conditions and then $N_{2}$ fluxes through the membranes with different intermediate layers were measured. The surface morphology of the intermediate layer in the mixture of nickel powder and inorganic sol was analyzed using scanning electron microscope (SEM). Finally, the Pd-Ni-Ag alloy composite membrane using the support coated with the mixture of nickel powder and silica as an intermediate layer was fabricated and then the gas permeances for $H_{2}$ and $N_{2}$ through the Pd-based membrane were investigated. The selectivity of $H_2/N_2$ was infinite and the $H_{2}$ flux was $1.39{\times}10^{-2}mol/m^2{\cdot}s$ at the temperature of $500^{\circ}C$ and trans-membrane pressure difference of 1 bar.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.306-306
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• 2008

기계적 에너지를 전기적 에너지로 변환하는 에너지 변환소자인 압전 세라믹스는 액추에이터, 변압기, 초음파모터, 초음파 소자 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근에는 이러한 압전 소자를 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics, MEMS 분야 등의 대체 에너지원으로 응용하기 위한 연구가 진행되고 있다. 특히 인간의 걷기 운동 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수 가 있어서, 기존 이차전지를 대체 또는 보완 할 수 있는 방안도 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 우수한 압전특성으로 전자세라믹스 분야에서 가장 널리 사용되어지고 있지만 $1200^{\circ}C$ 이상의 높은 소결온도 때문에 $1000^{\circ}C$ 부근에서 급격히 휘발되는 PbO로 인한 환경오염과 기본조성의 변화로 인한 압전 특성의 저하가 문제시 되고 있다. 또한 적층 세라믹스의 제작 시 구조적 특성상 내부전극이 도포된 상태에서 동시 소결이 필요한데, 융점이 낮은 Ag전극 대신 값비싼 Pd나 Pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제성이 떨어지는 단점을 갖게 된다. 순수 Ag 전극을 사용하거나 Ag의 비율이 높은 내부전극을 사용하기 위해서는 $900^{\circ}C$ 이하에서 소결되고 우수한 전기적 특성을 보이는 압전 세라믹스를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)(Ni_{1/3}/Nb_{2/3})_{0.25}(Zr_{0.35}/Ti_{0.4})O_3$ 계의 조성을 설계하고, 소걸온도를 낮추기 위해서 2 단계 하소법을 이용하였다. 또한 $MnCO_3$, $SiO_2$, $Pb_3O_4$ 등을 소량 첨가하여 액상 소결 특성을 부여하여 소결 온도를 감소시키려는 시도도 하였다. 분말을 볼 밀링 (ball milling)을 통해 24시간 동안 혼합하고, 혼합된 분말은 $800^{\circ}C$에서 2시간 동안 하소하였다. 하소한 분말을 다시 72시간 동안 볼 밀링 하여 최종 분말을 얻었다. 최종 분말에 PVB를 첨가하여 직경 15mm의 디스크 형태로 성형한 후, 850~$975^{\circ}C$ 범위에서 온도를 변화시키면서 소결을 하였다. 최종 분말 및 소결된 시편을 XRD분석을 통하여 상을 확인하였고, SEM을 이용하여 미세조직을 관찰 하였다. 전기적 특성을 평가하기 위하여 두께를 1mm로 연마한 시편에 Ag 전극을 도포하여 $650^{\circ}C$에서 열처리한 후, 분극처리 하였다. 압전특성은 $d_{33}$-meter로 측정하였고, impedance analyzer를 이용하여 압전 특성 (전기기계결합계수 및 기계적품질계수)을 측정 하였다. 또한 강유전체 특성 평가 장치 (Precision-LC)를 이용하여 분극-전계 특성을 평가하였다. 이상의 연구를 통하여 소결 온도가 $900^{\circ}C$인 경우에서도 양호한 압전 특성을 확보 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.516-520
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• 2012

In this paper, we have theoretically analyzed and designed a dielectric multi-layer sensor with a SPR (surface plasmon resonance) using analytical calculation and FDTD (finite difference time-domain) methods. The proposed structure is composed of periodic layer and thin metal film. It has many advantages. One of that is a high sensitivity of the SPR. Another is a high Q-factor of the characteristics in the PhC (photonic crystals) micro-cavity structure. The incident light has double resonance characteristics, because the filtered light by PhC structure, dielectric multi-layer, is met the thin metal film for SPR effect. We have also observed the change of resonance characteristics according to the variation of effective index on the metal film.

• Membrane Journal
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• v.21 no.2
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• pp.127-140
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• 2011

The effects of $TiO_2$ photocatalyst coating bead concentration, water-back-flushing period (FT), and back-flushing time (BT) were investigated in hybrid process of ceramic ultrafiltration and photocatalyst for advanced drinking water treatment in this study. Photocatalyst coating bead concentration was changed in the range of 10~40 g/L, FT in 2~10 min and BT in 6~30 sec. Then, we observed the effects on resistance of membrane fouling $(R_f)$, permeate flux (J) and total permeate volume $(V_{\Upsilon})$ during total filtration time of 180 min. As decreasing photocatalyst coating bead concentration, $R_f$ increased and J decreased. $V_{\Upsilon}$ was the highest value of 8.85 L at 40 g/L of photocatalyst coating bead concentration. At FT change experiment, $R_f$ decreased and J increased as decreasing FT. Then $R_f$ decreased and J increased according to increasing BT at BT change experiment. Because at NBF (no back-flushing) dramatic membrane fouling reduced membrane pore size, turbid and dissolved organic matters ($UV_{254}$ absorbance) could be removed efficiently. Therefore, treatment efficiencies of turbidity and dissolved organic matters were the highest at NBF. Then by cleaning effect of photocatalyst coating bead, the treatment efficiencies of turbidity and dissolved organic matters increased as decreasing FT and increasing BT.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.