• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.181.1-181.1
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• 2015

용액 공정을 이용한 Resistive random access memory (ReRAM)은 간단한 공정 과정, 대면적화, 저렴한 가격 등의 장점으로 인해 큰 관심을 받고 있으며, HfOx, TiOx, AlOx 등의 산화물이 ReRAM 절연 막으로 주로 연구되고 있다. 더 나아가 최근에는 organic 물질을 메모리 소자로 사용한 연구가 보고되고 있다. 이는 경제적이며, wearable 또는 flexible system에 적용이 용이하다. 그럼에도 불구하고, organic 물질을 갖는 메모리 소자는 기존의 산화물 소자에 비해 열에 취약하며 전기적인 특성과 신뢰성이 우수하지 못하다는 단점을 가지고 있다. 이를 위한 방안으로 본 연구에서는 AlOx - polymethylmethacrylate (PMMA) blended thin film ReRAM을 제안하였다. 이는 organic물질의 전기적 특성을 개선시킬 뿐 아니라, inorganic 물질을 wearable 소자에 적용했을 때 발생하는 crack과 같은 기계적 물리적 결함을 해결할 수 있는 새로운 방법이다. 먼저, P-type Si 위에 습식산화를 통하여 SiO2 300 nm 성장시킨 기판을 사용하여 electron beam evaporation으로 10 nm의 Ti, 100 nm의 Pt 층을 차례로 증착하였다. 그리고 PMMA 용액과 AlOx 용액을 초음파를 이용하여 혼합한 뒤, 이 용액을 Pt 하부 전극 상에서 spin coating방법으로 1000 rpm 10초, 5000 rpm 30초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 150, 180, $210^{\circ}C$의 온도로 30 분 동안 열처리를 진행하였고, shadow mask를 이용하여 상부 전극인 Ti를 sputtering 방식으로 100 nm 증착하였다. 150, 180, $210^{\circ}C$로 각각 열처리한 AlOx - PMMA blended ReRAM의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과 제작된 소자 전부에서 2 V이하의 낮은 동작전압, 안정된 DC endurance (>150cycles), 102 이상의 높은 on/off ratio를 확인하였고, 그 중 $180^{\circ}C$에서 열처리한 ReRAM은 더 높은 on/off ratio를 갖는 것을 확인하였다. 결론적으로 baking 온도를 최적화하였으며 AlOx - PMMA blended film ReRAM의 우수한 메모리 특성을 확인하였다. AlOx-PMMA blended film ReRAM은 organic과 inorganic의 장점을 갖는 wearable 및 system용 비휘발성 메모리소자에 적용이 가능한 경제적인 기술로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.215-220
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• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• 자원환경지질
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• 제23권2호
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• pp.245-259
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• 1990

Petrochemical analyses of granitic rocks including trace element, REE and oxygen isotope were carried out to understand petrogenesis of plutonic rocks from the Chungju, Wolaksan and Jecheon granite batholiths, which might be related with tungsten-base metal-fluorite mineralization in the Hwanggangri metallogenic province. Different geochemical characteristics such as major and trace elements were found between Jurassic Daebo granitic rocks (Chungju, Jecheon, Wonju, and Boeun granitic rocks) and Cretaceous Bulgugsa granitic rocks (Wolaksan, Muamsa and Sokrisan granitic rocks). Cretaceous granitoids are characterized by high $SiO_2$and $K_2O$ contents and low $TiO_2$, $Al_2O_3$, MgO and CaO contents. They also have relatively high contents of trace elements(Zn, V, Co, Cr, Sr, and Ba) in comparison with the Jurassic granitoids. (Eu)/($Eu^*$) and $(La/Lu)_{CN}$ ratios of Jurassic plutons vary from 0.78 to 1.13 and from 26.02 to 30.5, respectively, while the ratios of Cretaceous ones range from 0.22 to 0.28 and from 4.42 to 14.2, respectively. The REE patterns of the Cretaceous and Jurassic granitic rocks have quite different Eu anomalies: large negative Eu anomaly in the former, and mild or absent Eu anomaly in the latter. The large Eu negative of Cretaceous granitic rocks are interpreted as a differentiated product of fractional crystallization of granitic magma deduced by Rayleigh fractionation model(Tsusue et al., 1987). Oxygen isotopic compositions of quartz for Daebo and Bulgugsa granitic rocks range from 9.98 to 10.51‰ and from 8.26 to 9.56‰, respectively. The Daebo granitic rocks enriched in $^{18}0$ suggest that the magma be undergone different partial melting processes from the Bulgugsa ones. Of the Bulgugsa granitoids, Wolaksan and Sokrisan mass have different contents of trace elements and ${\delta}\;^{18}0$ values of the silicate minerals, which indicate that they are not from the identical source of magma. Many mineral deposits are distributed in and/or near the Wolaksan and Muamsa granitic rocks, but a few mineral deposits are found in and near the Chungju and Jecheon granite batholiths. It might be depend on geochemisty of the related igneous rocks which have low contents of Ba, Sr, Co, V, Cr, Ni, Zn and high contents of Nb and Y, and on lithology of country rocks such as cabonate and noncarbonate rocks.

• 자원환경지질
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• 제40권4호
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• pp.361-374
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• 2007

희토류원소는 지각의 진화, 분화작용 등을 포함한 여러 가지 지질학적 역사를 이해하는 매우 유용한 도구로서 활용되어 왔다. 뿐만 아니라, 이 희토류원소는 방사성폐기물의 처분과 관련된 물-암석반응연구에 있어서 액티나이드 원소의 유사체로서 사용되어져 왔다. 본 논문에서는 희토류원소인 Eu와 액티나이드 원소인 Am의 유사한 물리적/화학적 특성을 토대로 지질매체의 종류에 관계없이 희토류원소와 액티나이드 원소의 거동이 매우 유사하다는 가설을 설정하고 이를 검증하기 위한 회분식(batch experiment) 실험을 수행하였다. 회분식 실험에는 4종류의 암석(화강암, 화강암질 편마암, 앰피볼라이트, 응회암)을 지질매체로 선택하였고, 고준위 방사성 핵종으로는 액티나이드계열인 $^{241}Am$, 희토류원소 계열인 $^{152}Eu,\;^{160}Tb$을 선택하였고, 중저준위 핵종으로는 $^{60}Co$를 사용하였다. 특히 $^{160}Tb$와 $^{60}Co$는 $^{241}Am-^{152}Eu$의 흡착능과 다른 방사성핵종의 흡착능을 비교하는데 사용되었다. 핵종과 혼합한 흡착실험용 용액의 pH는 5.5전후로 조절하였다. 실험결과, $^{241}Am,\;^{152}Eu,\;^{160}Tb$의 흡착 특성은 암상의 변화에 관계없이 매우 유사하게 나타났지만, $^{60}Co$는 다르게 나타났다. 이는 $^{60}Co$의 흡착특성은 암상의 종류에 따라 큰 차이가 있음을 지시해주는 것이다. 이와 같은 실험결과는 1) 희토류원소 중 Eu이 지표지질하에서의 Am의 거동을 추적하고 예측하기 위한 최적 유사체이고, 2) 비록 암석가루의 비표면적 혹은 양이온교환능과 같은 물리적/화학적 특성에 의한 영향을 배제할 수는 없지만, $SiO_2,\;TiO_2,\;P_2O_5$같은 화학조성 및 Eu의 이상과 같은 희토류원소의 분포도의 차이가 지표지질하에서의 방사성 핵종의 흡착거동에 중요한 역할을 하고 있음을 지시해주는 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.175-175
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• 1999

Circumventing problems lying in the conventional lithographic techniques, we devised a new method for the fabrication of nanometer scale metal wires inspired by the unique characteristics of carbon nanotubes (CNTs). Since carbon nanotubes could act as masks when CNT-coated thin Au/Ti layer on a SiO2 surface was physically etched by low energy argon ion bombardment 9ion milling), Au/Ti nano-wires were successfully formed just below the CNTs exactly duplicating their lateral shapes. Cross-sectional analysis by transmission electron microscopy revealed that the edge of the metal wire was very sharply developed indicating the great difference in the milling rates between the CNTs and the metal layer as well as the good directionality of the ion milling. We could easily find a few nanometer-wide Au/Ti wires among the wires of various width. After the formation of nano-wires, the CNTs could be pushed away from the metal nano-wire by atomic force microscopy, The lateral force for the removal of the CNTs are dependent upon the width and shape of the wires. Resistance of the metal nano-wires without the CNTs was also measured through the micro-contacts definted by electron beam lithography. since this CNT-based lithographic technique is, in principle, applicable to any kinds of materials, it can be very useful in exploring the fields of nano-science and technology, especially when it is combines with the CNT manipulation techniques.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.514-520
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• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.171-171
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• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.