• 분석과학
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• 제20권4호
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• pp.279-288
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• 2007

본 연구에서는 염산처리에 의하여 표면 개질된 활성탄소 섬유에 TNB (titanium n-butoxide) 용액을 침투시켜 $ACF/TiO_2$ 광촉매를 제조하였다. 염산 처리에 의하여 표면 기능기가 증가된 다공성 탄소에 형성된 $TiO_2$의 특성화에 연구의 관점을 두었다. TNB가 $TiO_2$로 변화되는 산처리 효과는 $ACF/TiO_2$ 광촉매제조에 상당히 중요한 요소임을 확인하였다. 표면 특성분석 결과로부터, BET 비표면적과 전체 동공부피는 산처리 양이 증가함에 따라 표면의 이산화티탄 화합물 형성과 함께 감소함을 나타내었다. 염산처리에 의해 형성된 $ACF/TiO_2$ 계에 대한 X-선 회절 변화로부터, 염산을 처리하지 않은 FT와 0.05, 0.1 M 처리된 FT1, FT2의 3가지 시료의 경우, 주요한 회절선의 피크는 아나타제의 결정상을 나타내었으며, 0.5M 처리된 FT3의 경우 아나타제와 루타일의 두 가지 형상이 나타났다. SEM 결과로부터, 전처리 하기전과 후에 활성탄소섬유 주변에 형성된 화합물들의 분포가 현저하게 다름을 알 수 있었으며, 이러한 현상은 산처리 효과의 우수성을 설명하고 있다. EDX 결과에 의하면, 모든 시료의 스펙트럼은 C, Ti와 O의 피크가 주요한 특징적 피크로 크게 나타났음을 보여 주고 있다. 마지막으로 MB (methylene blue)의 제거 효율에 근거하여, MB 농도 감소는 활성탄소섬유의 흡착효과와 $TiO_2$의 우수한 광분해 효과에 대한 두 가지 복합적인 결과로 설명할 수 있다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.374-377
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• 2003

Sol-gel processing of BaTiO$_3$ ceramics doped with La(0.01-1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum isopropoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results suggested that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of BaTiO$_3$ powders and sintering conditions used.

• Rapid Communication in Photoscience
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• 제3권1호
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• pp.20-24
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• 2014

N-doped anatase $TiO_2$ nanoparticles were prepared by the sol-gel process followed by a hydrothermal treatment and successfully used as the photoanodes in organic dye-sensitized solar cells (DSSCs). As expected, the power conversion efficiency (PCE) of 8.44% was obtained for the NKX2677/HC-A-sensitized DSSC based on the 30 mol% N-doped $TiO_2$ photoanode, which was an improvement of 23% relative to that of the DSSC based on the NKX2677/DCA.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.902-906
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• 2009

It is found that that the coating N-acetyl cysteine (NAC) on gold surfaces may be used to design the distribution of either gold particle adsorbed to the $TiO_2$ surface or vice versa by adjusting the electrostatic interactions. In this study, we investigated electrostatic properties of the NAC-coated-gold surface and the $TiO_2$ surface. The surface forces between the surfaces were measured as a function of the salt concentration and pH value using the AFM. By applying the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory to the surface forces, the surface potential and charge density of the surfaces were quantitatively acquired for each salt concentration and each pH value. The surface potential and charge density dependence on the salt concentration was explained with the law of mass action, and the pH dependence was with the ionizable groups on the surface.

• Journal of information and communication convergence engineering
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• 제1권1호
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• pp.31-34
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• 2003

Sol-gel processing of $BaTiO_{3}$ ceramics doped with La (0.01∼1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum isopropoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results suggested that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_{3}$ powders and sintering conditions used.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.581-584
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• 2003

The austenitic STS 304 stainless steel was turned to clarify the effects of tool geometry on the tool wear. The wear of TiN-TiCN-TiC-TiAlN coated tungsten carbide tool was the smallest, exhibiting larger wear in the order of Si-Al-O-N ceramic, TiN coated tungsten carbide, TiN-TiCN-TiN coated tungsten carbide, TiC-TiN cermet and M20 tungsten carbide tools at the same cutting conditions. The S-type tool of M20 with large approach angle showed the longest tool life of all tools used in this tests due to preventing the groove wear of the side cutting edge. The wear of the S-type tool with the rake angle of 15$^{\circ}$became smaller than with that of -5$^{\circ}$, but the tool with the nose radius of 0.8mm did not perform much better with increasing the rake angle.

• 한국정밀공학회지
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• 제20권10호
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• pp.56-64
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• 2003

The effect of tool geometry on the tool wear in turning the austenitic stainless steel, STS 304 was investigated. The wear of TiN-TiCN-TiC-TiAlN coated tungsten carbide tool was the smallest, showing larger wear in the order of Si-Al-O-N ceramic, TiN coated tungsten carbide, TiN- TiCN- TiN coated tungsten carbide, TiC-TiN cermet and M20 tungsten carbide tools at the same cutting conditions. The S-type tool of M20 with the larger side cutting edge angle showed the smallest tool wear in all tests due to preventing the groove wear of the side cutting edge. The wear of the S-type tool with the rake angle of $15^{\circ}$ became smaller than with that of $-5^{\circ}$, but the tool with the nose radius of 0.8mm did not perform much better with increasing the rake angle.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.452-452
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• 2011

Using ab initio calculations, we reveal the origins of the extraordinarily increased electric conductivity of the LaAlO3/SrTiO3 interface. In both of the two (LaAlO3)m/ SrTiO3 heterojunction models (m=3, 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)m/(SrTiO3)4 interfaces. As a result, the 3dxy orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3dxy orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3dxy orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface. In addition, through a comparison of the atomic displacements and charge accumulation amounts between the two thickness models (m=3, 5), the thickness-dependency of the conductivity can be explained.

• 한국세라믹학회지
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• 제34권5호
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권4호
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.