• Environmental Engineering Research
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• v.10 no.5
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• pp.239-246
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• 2005

The effect of Pt addition over $V_2O_5-WO_3/TiO_2$ catalyst supported on PRO-66 was investigated for NO reduction in order to develop the catalytic filter working at low temperature. Catalytic filters, $Pt-V_2O_5-WO_3/TiO_2/PRD$, were prepared by co-impregnation of Pt, V, and W precursors on $TiO_2$-coated ceramic filter named PRD (PRD-66). Titania was coated onto the pore surface of the ceramic filter using a vacuum aided-dip coating method. The Pt-loaded catalytic filter shifted the optimum working temperature from $260-320^{\circ}C$(for the catalytic filter without Pt addition) to $190-240^{\circ}C$, reducing 700 ppm NO to achieve the $N_x$ slip concentration($N_x\;=\;NO+N_2O+NO_2+NH_3$) less than 20 ppm at the face velocity of 2 cm/s. $Pt-V_2O_5-WO_3/TiO_2$ supported on PRD showed the similar catalytic activity for NO reduction with that supported on SiC filter as reported in a previous study, which implies the ceramic filter itself has no considerable interaction for the catalytic activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.161-161
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• 2012

질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$와 $NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.676-681
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• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.

• Proceedings of the KAIS Fall Conference
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• 2000.10a
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• pp.233-236
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• 2000

산업화에 따라 발생하는 산업폐수에는 많은 종류의 유해한 유기물들이 함유되어 있으며, 이러한 유독성 유기물을 제거하기 위하여 많은 연구가 진행되어 왔으나. 기존의 처리 방법들은 2차 환경오염을 유발한다는 문제점을 갖고 있다. 최근 폐수처리에 광촉매를 이용한 광분해 반응이 기존의 처리방법들에서 나타날 수 있는 문제점과 폐수중의 유독성 유기물을 제거할 수 있는 환경친화적 공정이라는 보고가 있은 후 광촉매에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 광촉매 TiO₂의 표면특성을 XRD, SEM 및 BET를 사용하여 자세히 고찰하였다. XRD 결과 Degussa P25는 anatase 구조와 rutile 구조가 섞인 형태였으며, Aldrich Degissa TiO₂는 100% anatase 구조, KIER TiO₂는 100% rutile 구조를 가졌고 SEM 결과 Aldrich와 Degussa TiO₂의 입자형태는 작은 입자들이 뭉쳐있는 형태였으나 KIER TiO₂는 작은 입자들이 독립적으로 분리된 타원형으로 입자크기가 가장 컸다. 반면 BET 결과 Degussa TiO₂의 비표면적이 59㎡/g으로 Aldrich TiO₂(6㎡/g)나 KIER TiO₂(14 ㎡/g)에 비하여 매우 큼을 알 수 있었다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.7 s.250
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• pp.692-699
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• 2006

In this work, $TiO_2$ nanoparticles were synthesized using $N_2-diluted$ and Oxygen-enriched co-flow hydrogen diffusion flames. The effect of flame temperature on the crystalline structure of the formed $TiO_2$ nanoparticles was investigated. The measured maximum centerline temperature of the flame ranged from 2,103k for oxygen-enriched flame to 1,339K for $N_2-diluted$ flame. The visible flame length and the height of the main reaction zone were characterized by direct photographs. The crystalline structures of $TiO_2$ nanoparticles were analyzed by XRD. From the XRD analysis, it was evident that the crystalline structures of the formed nanoparticles were divided into two sorts. In the higher temperature region, over the 1,700K, the fraction of formed $TiO_2$ nanoparticles having anatase-phase crystalline structure increased with increasing the flame temperature. On the contrary, in the lower temperature region, below the 1,600K, the fraction of anatase-phase nanoparticles increased with decreasing the flame temperature.

• Environmental Engineering Research
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• v.13 no.2
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• pp.85-92
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• 2008

In this present study, we have synthesized Fe-containing AC(activated carbon)/$TiO_2$ composites with titanium (VI) n-butoxide (TNB) as a titanium source to Fe treated AC through an impregnation method. The result of the textural surface properties demonstrates that there is a slight decrease in the BET surface area of composite samples with an increase of the amount of Fe treated. The surface properties of scanning electron microscope (SEM) presented a characterization of a porous texture on the Fe-containing AC/$TiO_2$ composites and homogenous compositions for Fe and titanium dioxide distributed on the sample surfaces. Fe compound peaks and a titanium dioxide structure were observed in the X-ray diffraction patterns for the Fe-containing AC/$TiO_2$ composites. The results of chemical elemental composition for the Fe-containing AC/$TiO_2$ composites showed that most of the spectra for these samples gave stronger peaks for C, O, treated Fe components and Ti metal than that of any other elements. From the photo degradation results for the piggery waste, the Fe-containing AC/$TiO_2$ composites showed an excellent degradation activity for the chemical oxygen demand (COD) due to a photocatalysis of the supported $TiO_2$, radical reaction by Fe species and the adsorptivity and absorptivity of porous carbon.

• Journal of the Korean Ceramic Society
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• v.23 no.2
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• pp.21-30
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• 1986

Pure submicron $SrTiO_3$ powders had been synthesized with chemical wet process that $5N-NH_4OH$ solution was sprayed into the mixed solution of $SrTiO_3$, $TiCl_4$ and $H_2O_2$ with $N_2$ carrier gas. The characteristic properties of powders obtained from this experiment were as follows. The optimum synthesis condition in reaction bath was above PH 8.5 and under $25^{\circ}C$ The particle size of precipitated SrTiO(OH) powders dried at 6$0^{\circ}C$ was under 0.01${\mu}{\textrm}{m}$ and uniform. Amorphous precipitated complex powders emitted adsorbed water at 15$0^{\circ}C$ less that and crystalline $SrTiO_3$powders was produced from calcining the complex at 30$0^{\circ}C$. Sintered body of SrTiO3 fired at 133$0^{\circ}C$ showed that relative dielectric constant was 228 at 1MHZ and bulk density was 4.73g/$cm^3$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.42-42
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• 2007

무독성 원소로 조성된 Ti-30Ta-xZr(x=3, 7, 10, 15) 합금을 제조하여, HA박막과 금속사이의 계면이 생기는 문제점을 개선하기 위해 합금 표면에 HA/TiN 및 HA/ZrN 이중층을 형성시킨 후 전기화학적 방법으로 코팅의 영향을 조사하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.244-245
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• 2015

PEALD TiN 금속 전극을 갖는 MOS device에서 SC1 ($NH_4/H_2O_2/H_2O=1:2:5$), SPM ($H_2SO_4/H_2O_2=10:1$), $H_2O_2$ etch chemical을 이용해 TiN 식각 후 oxide 표면 잔류 Ti에 의한 전기적 특성 분석을 진행 하였다. Etch chemical 중 SPM을 이용한 소자의 전기적 특성이 우수하였는데, 이는 잔류Ti atom의 양이 다른 etch chemical을 사용한 것 대비 낮았기 때문이다. 이로 인하여 낮은 leakage current, less frequency dependence의 특성이 관찰되었다. 또한, 후속 열처리를 통해 더욱 우수한 특성이 관찰 되었다. 이러한 공정기술은 single 전극을 갖는 CMOS 형성 시 사용 될 수 있을 것으로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.