• Nuclear Medicine and Molecular Imaging
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• v.41 no.5
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• pp.364-372
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• 2007

Purpose: This study was designed to investigate the cellular uptake of various tumor imaging radiopharmaceuticals in human breast cancer cells before and after paclitaxel exposure considering viable cell number. Materials and Methods: F-18-fluorodeoxyglucose, C-11-methionine, Tl-201, Tc-99m-MIBI, and Tc-99m-tetrofosmin were used to evaluate the cellular uptake in MCF-7 cells. MCF-7 cells were cultured in multi-well plates. Wells were divided into DMSO exposure control group, and paclitaxel exposure group. The exposure durations of paclitaxel with 10 nM or 100 nM were 2 h, 6 h, 12 h, 24 h, and 48 h. Results: Viable cell fraction was reduced as the concentration and exposure time of paclitaxel increased. After 10 nM paclitaxel exposure, the cellular uptake of all 5 radiopharmaceuticals was not reduced significantly, irrespective of exposure time and viable cell fraction. After 100 nM paclitaxel exposure, the cellular uptake of all 5 radiopharmaceuticals was enhanced significantly irrespective of viable cell fraction. The peak uptake was observed in experimental groups with paclitaxel exposure for 6 to 48 h according the type of radiopharmaceutical. When the cellular uptake was adjusted for the viable cell fraction and cell count, the peak cellular uptake was observed in experimental groups with paclitaxel exposure for 48 h, irrespective of the type of radiopharmaceutical. Conclusion: The cellular uptake of F-18-fluorodeoxyglucose, C-11-methionine, Tl-201, Tc-99m-MIBI, and Tc-99m-tetrofosmin did not reflect viable cell number in MCF-7 cells after paclitaxel exposure for up to 48 h.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.575-580
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• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1290-1292
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• 1995

A cylindrical-post magnetron sputtering system was designed for pipe inner coating. The discharge condition was depended on the gas pressure, magnetic field and pipe diameter. At given discharge current, discharge voltage increased a little with pipe diameter. The electron temperature and floating potential increased with magnetic field. The impact ion energy on the pipe increased with bias voltage. The TiN thin-film of $2{\mu}m$ thickness was formed by cylindrical-post magnetron sputtering system under the conditions of the pressure of 5mTorr, the applied voltage of 700V, the discharge current of 500mA, the magnetic field of 300G, and the bias voltage of -100V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.138-141
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• 2004

[ $MnO_2$ ]가 첨가된 $0.9Pb(Zr_{0.5}Ti_{0.5})O_3-0.2Pb[(Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3}]O_3$(0.8PZT-0.2PZNN) 세라믹스는 그 압전특성과 유전특성이 뛰어나지만 $1000^{\circ}C$ 이하의 낮은 소결 온도에서는 소결되지 않는다. $1000^{\circ}C$이하의 낮은 소결온도에서 소결하기 위해 CuO를 첨가한 결과, 소결온도 $920^{\circ}C$에서 소결성은 우수하였으나 그 압전 특성의 저하가 두드러졌다. 이는 XRD에서 확인한 결과에 따르면 CuO의 첨가가 우수한 MPB 조성으로 판명된 $MnO_2$ 가 첨가된 0.8PZT-0.2PZNN 세라믹스의 결정구조를 Rhombohedral 구조로 바꾸기 때문인 것으로 보였으며 이러한 문제는 PZNN의 비율을 조절하여 0.875PZT-0.125PZNN 세라믹스를 선택함으로 인해 해결할 수 있었다. 그러나 여전히 낮은 $Q_m$값을 높이기 위해서 $Al_2O_3$를 첨가하였고 그 결과 시편의 tetragonality 감소와 $Q_m$값의 증가를 확인할 수 있었으나 그 첨가량이 0.2wt% 이상일 경우에는 밀도의 감소로 인한 압전특성의 저하가 나타났다. 밀도의 향상을 위해 Zn and Ni excess 조성을 선택하였고 그 결과 0.5wt% $MnO_2$와 0.2wt% CuO 그리고 0.3wt% $Al_2O_3$를 첨가한 0.875PZT-0.125PZNN 세라믹스(Zn and Ni excess 조성)를 $920^{\circ}C$에서 소결한 경우 $k_p=0.581,\;Q_m=809,\;d_{33}=345\;pC/N\;and\;{\varepsilon}_{33}/{\varepsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.7
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• pp.929-933
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• 2010

Four-point bending tests were performed to investigate the interfacial adhesion of Cu-Cu bonding fabricated by thermo-compression process for three dimensional packaging. A pair of Cu-coated Si wafers was bonded under a pressure of 15 kN at $350^{\circ}C$ for 1 h, followed by post annealing at $350^{\circ}C$ for 1 h. The bonded wafers were diced into $30\;mm\;{\times}\;3\;mm$ pieces for the test. Each specimen had a $400-{\mu}m$-deep notch along the center. An optical inspection module was installed in the testing apparatus to observe crack initiation at the notch and crack propagation over the weak interface. The tests were performed under a fixed loading speed, and the corresponding load was measured. The measured interfacial adhesion energy of the Cu-to-Cu bonding was $9.75\;J/m^2$, and the delaminated interfaces were analyzed after the test. The surface analysis shows that the delamination occurred in the interface between $SiO_2$ and Ti.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.386-393
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• 2002

Fabricatio of the potassium-titanate fiber with K2O${\cdot}nTiO_2$ composition and coating of electrically conductive Sb-doped $SnO_2$ (ATO: Antimony Tin Oxide) layer on the fiber on the fiber were the fiber were the aims of this work. The fiber fabricated by slow-cooling technique showed the mean length of $15{\mu}m$ and mean diameter of $0.5{\mu}m$. Three different coating methods i.e, sol-gel, co-precipitation and urea technique, were attempted to coat the conductive ATO layer on the potassium-titanate fiber. The influences of coating method, concentrations of ATO(5∼70wt%) and Sb (0∼20wt%), temperature in the range of $450\;to\;800^{\circ}C$, number of washing (3∼4 times) on the resistivity of the ATO coated fiber were examined in details. The fiber coated ATO by coprecipitation exhibited lower resistivity of 103${\Omega}{\cdot}$cm at the 30 wt% of ATO, and showed nearly constant low value of $60{\Omega}{\cdot}cm\;to\;90{\Omega}{\cdot}$cm at the higher concentration of ATO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.189-189
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• 2008

Due to the environmental issue vast research is going on to replace the widely used lead contented piezoelectric materials. Bismuth sodium titanate (abbreviated as BNT) based bismuth sodium titanate-barium titanate (abbreviated as BNBT) ceramic was prepared by using modified method rather than conventional mixed oxide method. This modification was made to improve the properties of BNT based ceramic. In this procedure $BaTiO_3$ (abbreviated as BT) was prepared using conventional mixed oxide method. Analytical grade raw materials of $BaCO_3$ and $TiO_2$ were weighted and ball milled using ethanol medium. The mixed slurry was dried and sieved under 80 mesh. Then the powder was calcined at $1100^{\circ}C$ for 2 hours. This calcined BT powder was used in the preparation of BNBT. Stoichiometric amount of $Bi_2O_3$, $Na_2CO_3$, $TiO_2$ and BT were weighted and mixed by using ball mill. The used calcination temperature was $850^{\circ}C$ for 2 hours. Calcined powder was taken for another milling step. BNBT disks were pressed to 15 mm of diameter and then cold isostatical press (CIP) was used. Pressed samples were sintered at $1150^{\circ}C$ for 2 hours. The SEM microstructure analysis revealed that the grain shape of the sintered ceramic was polyhedral and grain boundary was well matched where as the sample prepared by conventional method showed irregular arrangement and grain boundary not well matched. And sintered density was better (5.78 g/cc) for the modified method. It was strongly observed that the properties of BNBT ceramic near MPB composition was found to be improved by the modified method compare to the conventional mixed oxide method. The piezoelectric constant dB of 177.33 pC/N, electromechanical coupling factor $k_p$ of 33.4%, dielectric constant $K_{33}^T$ of 688.237 and mechanical quality factor $Q_m$ of 109.37 was found.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.279-279
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• 2011

나노 입자를 이용한 비휘발성 메모리 소자의 전기적 특성 향상을 위하여 일함수가 Si 보다 큰 금속, 금속산화물, 금속 실리사이드 나노입자를 이용한 다양한 형태의 메모리 구조가 제안되어져 왔다.[1] 특히 이와 같은 나노 부유 게이트 구조에서 터널 절연막의 구조를 소자의 동작 속도를 결정하는데 이는 터널링 되어 주입되는 전자의 확률에 의존하기 때문이다. 양자 우물에 국한된 전하가 누설되지 않으면서 주입되는 전자의 터널링 확률을 증가시키기 위하여, dielectric constant 와 barrier height를 고려한 다양한 구조의 터널 절연막의 형태가 제안 되었다.[2-3] 특히 낮은 전계에서도 높은 터널링 확률은 메모리 소자의 동작 속도를 향상시킬 수 있다. 본 연구에서는 n형 Si 기판위에 Si3N4 및 HfAlO를 각각 1.5 nm 및 3 nm 로 atomic layer deposition 방법으로 증착하였으며 3~5 nm 지름을 가지는 $TiSi_2$ 및 $WSi_2$ 나노 입자를 형성한 후 컨트롤 절연막인 $SiO_2$를 ultra-high vacuum sputtering을 사용하여 20 nm 두께로 형성 하였다. 마지막으로 $200{\mu}m$ 지름을 가지는 Al 전극을 200 nm 두께로 형성하여 나노 부유 게이트 커패시터를 제작하였다. 제작된 소자는 Agilent E4980A precision LCR meter 및 HP 4156A precision semiconductor parameter analyzer 를 사용하여 전기용량-전압 및 전류-전압 특성분석을 하여 전하저장 특성 및 제작된 소자의 터널링 특성을 확인 하여 본 연구를 통하여 제작된 나노 부유 게이트 커패시터 구조가 메모리 소자응용이 가능함을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.400-405
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• 2016

Ferric oxide (${\alpha}-Fe_2O_3$, hematite) is an n-type semiconductor; due to its narrow band gap ($E_g=2.1eV$), it is a highly attractive and desirable material for use in solar hydrogenation by water oxidation. However, the actual conversion efficiency achieved with $Fe_2O_3$ is considerably lower than the theoretical values because the considerably short diffusion length (2-4 nm) of holes in $Fe_2O_3$ induces excessive charge recombination and low absorption. This is a significant hurdle that must be overcome in order to obtain high solar-to-hydrogen conversion efficiency. In consideration of this, it is thought that elemental doping, which may make it possible to enhance the charge transfer at the interface, will have a marked effect in terms of improving the photoactivities of ${\alpha}-Fe_2O_3$ photoanodes. Herein, we report on the synthesis by pulsed electrodeposition of ${\alpha}-Fe_2O_3$-based anodes; we also report on the resulting photoelectrochemical (PEC) properties. We attempted Ti-doping to enhance the PEC properties of ${\alpha}-Fe_2O_3$ anodes. It is revealed that the photocurrent density of a bare ${\alpha}-Fe_2O_3$ anode can be dramatically changed by controlling the condition of the electrodeposition and the concentration of $TiCl_3$. Under optimum conditions, a modified ${\alpha}-Fe_2O_3$ anode exhibits a maximum photocurrent density of $0.4mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE) under 1.5 G simulated sunlight illumination; this photocurrent density value is about 3 times greater than that of unmodified ${\alpha}-Fe_2O_3$ anodes.