• Title/Summary/Keyword: TiN-M

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KOH 이방성 식각을 이용한 Ti-실리사이드 전계방출 소자 연구

  • 김성배;전형탁;최성수
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.61-61
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    • 1999
  • 저항이 5$\Omega$-cm인 n-type Si(100) 웨이퍼를 실리콘 식각시 마스크로 사용하기 위하여 습식 열산화법을 이용하여 100$0^{\circ}C$에서 SiO2을 2400$\AA$ 성장시킨 후, OPCVD 공정을 통해 785$^{\circ}C$서 SiH2Cl2 가스 30sccm과 NH3가스 100sccm을 이용하여 Si3N4를 3000$\AA$ 증착시켰다. 이 웨이퍼를 포토-리쏘그라피 공정을 거쳐 지름 2$\mu\textrm{m}$의 포토레지스트 패턴을 제작한 후 600W의 RF power하에서 CF4 가스 10sccm, CHF3 가스 15sccm, O2가스 8sccm 및 Ar가스 10sccm을 이용하여 MERIE 방법으로 Si3N4를 식각한 다음, 7:1 BHF 용액내에서 30초간의 습식식각을 통해 40wt.%의 KOH 용액내에 8$0^{\circ}C$에서 30초간의 이방성 식각을 통해 피라미드 모양의 Si FEA(field emitter array)를 제작하였다. 본 실험은 다음과 같이 완성된 Si FEA를 샤프닝 산화 후 산화막 식각을 통해 마스크를 제거한 다음, tip의 열화학적 내구성을 증가시키고 장시간 구동시 안정성과 전계방출 전류밀도를 높이기 위해 tip의 표면에 Ti를 sputter 방법으로 약 300$\AA$ 증착시킨 후, RTA 장비를 이용하여 2단계 열처리 (first annealing:$600^{\circ}C$/30sec, second annealing : 85$0^{\circ}C$/15sec)를 통해 Si FEA의 경우보다 낮은 turn-on 전압과 높은 전계방출 특성을 나타낼 것으로 기대된다.

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Supported nickel catalysts for the decomposition of hydrazine borane N2H4BH3

  • Cakanyildirim, Cetin;Demirci, Umit B.;Xu, Qiang;Miele, Philippe
    • Advances in Energy Research
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    • v.1 no.1
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    • pp.1-12
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    • 2013
  • In this work, we present the catalytic dehydrogenation of hydrazine borane $N_2H_4BH_3$ (HB) using supported nickel catalysts at $50^{\circ}C$. In the presence of monometallic nickel catalysts, the dehydrogenation of HB is a one-step reaction consisting of the hydrolysis of the $BH_3$ group only. The challenge is to activate nickel to make it reactive towards the $N_2H_4$ moiety of HB. A set of 52 catalysts were prepared by using 2 supports ($Al_2O_3$ and $TiO_2$), 5 nickel precursors and 3 preparation methods. For the first time, we show that the supported nickel catalysts are able to dehydrogenate the $NH_3$ moiety of HB. In our experimental conditions, the best results were obtained with 20 wt% Ni-$Al_2O_3$ and 20 wt% Ni-$TiO_2$, with ca. 190 mL $H_2+N_2$ generated over a total theoretical volume of 283 mL, suggesting $H_2$ selectivity of 37 and 32%, respectively. Both catalysts were then characterized by EDX, XPS, and XRD. Our achievement is the first step forward and opens new perspectives for developing catalysts for the total dehydrogenation of HB.

A Study of the Formation of Binary Intermediate Layer on Pd-based Hydrogen Separation Membrane Using Various Types of Metal Oxides (다양한 형태의 금속 산화물을 이용한 Pd계 복합 수소분리막의 2원계 중간층 형성에 관한 연구)

  • Hwang, In-Hyuck;Kim, Sung Su
    • Applied Chemistry for Engineering
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    • v.29 no.2
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    • pp.196-200
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    • 2018
  • In this study, the intermediate layer in Pd-based hydrogen separation membrane was synthesized to minimize the surface roughness and defects using powder-type and sol-type metal oxides. The surface properties and gas permeation characteristics were analysed by SEM and $N_2$ gas permeation test. The coating layer composed of sol type metal oxides has smooth surface, especially the layer coated by $TiO_2$ sol has little pin holes, cracks and defects. The binary layer composed of powder type and sol type metal oxides has similar flux characteristics to a single sol type layer. The Pd-based composite membrane improved by the binary intermediate layer exhibited $0.32mol/m^2s$ of the hydrogen permeation flux with a selectivity ($H_2/N_2$) of ~10,890 at 672 K and a pressure difference of 1 bar.

Characterization of PMW-PZT Thick Films Prepared by Screen Printing Method (스크린 인쇄법에 의해 제조한 PMW-PZT 후막의 특성)

  • Son, Jin-Ho;Kim, Yong-Bum;Cheon, Chae-Il;Yoo, Kwang-Soo;Kim, Tae-Song
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.30-35
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    • 2004
  • PMW-PZT thick films of about $30{\mu}m$ thickness were fabricated on Pt/$TiO_2$/$SiN_x$Si substrate by the hybrid method of screen printing and PZT sol application. With the increase of the number of the sol application times, the sintered density and electrical properties of PMW-PZT thick films were evidently increased. For the PMW-PZT thick film with PZT sol application of 10-times, the dielectric constant ($\varepsilon_r$) was 745 at the frequency of 100 KHz and thepiezoelectric coefficient ($d_33$) was 155 pC/N at the applied pressure of 1 atm.

Effect of Ni Addition on ATiO3 (A = Ca, Sr, Ba) Perovskite Photocatalyst for Hydrogen Production from Methanol Photolysis (메탄올 광분해 수소제조를 위한 ATiO3 (A = Ca, Sr, Ba) Perovskite 광촉매의 Ni 첨가 영향)

  • Kwak, Byeong Sub;Park, No-Kuk;Lee, Tae Jin;Lee, Sang Tae;Kang, Misook
    • Clean Technology
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    • v.23 no.1
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    • pp.95-103
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    • 2017
  • In this study, $ATiO_3$ (A = Ca, Sr, Ba) perovskite, which is the widely known for non $TiO_2$ photocatalysts, were synthesized using sol-gel method. And Ni was added at the A site of $ATiO_3$ by using that it is easy to incorporate. The physicochemical characteristics of the obtained $ATiO_3$ and Ni-$ATiO_3$ particles were confirmed using the X-ray diffraction (XRD) UV-visible spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), the $N_2$ adsorption-desorption isotherm measurement, and X-ray photoelectron spectroscopy (XPS). The $H_2$ was produced using the photolysis of MeOH. Using the Ni-$ATiO_3$ photocatalysts, $H_2$ production was higher than using the $ATiO_3$ photocatalysts. Especially, $273.84mmolg^{-1}$ $H_2$ was produced after 24 h reaction over the Ni-$SrTiO_3$. Also in the water (0.1 M KOH) with the Ni-$SrTiO_3$, $H_2$ production was $961.51mmolg^{-1}$ after 24 h reaction.

Pressure Sensing Properties of Al1-xScxN Thin Films Sputtered at Room Temperature (상온에서 성막한 고감도의 Al1-xScxN 박막의 압력 감지 특성)

  • Seok, Hye-Won;Kim, Sei-Ki;Kang, Yang-Koo;Lee, Young-Jin;Hong, Yeon-Woo;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.23 no.6
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    • pp.420-424
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    • 2014
  • Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

Low-Temperature Superplastic Deformation Behavior of Fine-Grained Ti-6Al-2Sn-4Zr-2Mo-0.1Si Alloy (미세 결정립 Ti-6Al-2Sn-4Zr-2Mo-0.1Si 합금의 저온 초소성 변형 거동)

  • Park, C.H.;Lee, B.;Lee, C.S.
    • Transactions of Materials Processing
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    • v.18 no.7
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    • pp.544-549
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    • 2009
  • This study aimed to elucidate the deformation mechanism during low-temperature superplasticity of fine-grained Ti-6Al-2Sn-4Zr-2Mo-0.1Si alloy in the context of constitutive equation. For this purpose, initial coarse equiaxed microstructure was refined to $2.2{\mu}m$ via dynamic globularization. Globularized microstructure exhibited large superplastic elongations(434-826%) at temperatures of $650-750^{\circ}C$ and strain rate of $10^{-4}s^{-1}$. It was found that the main deformation mechanism of fine-grained material was grain boundary sliding accommodated by dislocation motion with both stress exponent (n) and grain size exponent (p) values of 2. When the alpha grain size, not sub-grain size, was considered to be an effective grain size, the apparent activation energy for low-temperature superplasticity of the present alloy(169kJ/mol) was closed to that of Ti-6Al-4V alloy(160kJ/mol).

Electromagnetic Wave Absorption Properties in Fe-based Nanocrystalline P/M Sheets with Carbon Black and BaTiO3 Additives

  • Kim, Mi-Rae;Park, Won-Wook
    • Journal of Powder Materials
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    • v.16 no.1
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    • pp.33-36
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    • 2009
  • In order to increase the magnetic loss for electromagnetic(EM) wave absorption, the soft magnetic $Fe_{73}Si_{16}B_7Nb_3Cu_1$(at%) alloy strip was used as the basic material in this study. The melt-spun strip was pulverized using an attrition mill, and the pulverized flake-shaped powder was crystallized at $540^{\circ}C$ for 1h to obtain the optimum grain size. The Fe-based powder was mixed with 2 wt% $BaTiO_3$, $0.3{\sim}0.6$ wt% carbon black, and polymer-based binders for the improvement of electromagnetic wave absorption properties. The mixture powders were tape-cast and dried to form the absorption sheets. After drying at $100^{\circ}C$ for 1h, the sheets of 0.5 mm in thickness were made by rolling at $60^{\circ}C$, and cut into toroidal shape to measure the absorption properties of samples. The characteristics including permittivity, permeability and power loss were measured using a Network Analyzer(N5230A). Consequently, the properties of electromagnetic wave absorber were improved with the addition of both $BaTiO_3$ and carbon black powder, which was caused by the increased dielectric loss of the additive powders.

Process Design of Isothermal Forging for Three-Dimensional Ti-6Al-4V Wing-Shape (Ti-6Al-4V 합금 3D 날개형상의 항온단조 공정설계)

  • Yeom J. T.;Park N. K.;Lee Y. H.;Shin T. J.;Hong S. S.;Shim I. O.;Hwang S. M.;Lee C. S.
    • Transactions of Materials Processing
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    • v.14 no.2 s.74
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    • pp.126-132
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    • 2005
  • The isothermal forging design of a Ti-6Al-4V wing shape was performed by 3D FE simulation. The design focuses on near-net shape forming by the single stage. The process variables such as the die design, pre-form shape and size, ram speed and forging temperature were investigated. The main design priorities were to minimize forging loads and to distribute strain uniformly in a given forging condition. The FE simulation results for the final process design were compared with the isothermal forging tests. The instability of deformation was evaluated using a processing map based on the dynamic materials model(DMM), including flow stability criteria. Finally, a modified process design for producing a uniform Ti-6Al-4V wing product without forming defects was suggested.

Effects of Titanium Impurity on the Crystallographic and Spin-rotation Transitions of FeS

  • Nam, Hyo-Duk;Kim, Eng-Chan
    • Journal of Magnetics
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    • v.16 no.1
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    • pp.23-26
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    • 2011
  • The effects of titanium ions on the crystallographic and spin-rotation transitions in iron sulfide have been examined by M$\"{o}$ssbauer spectroscopy in the temperature range of 78 to 600 K. It is noted that the titanium impurity of $Ti_{0.02}Fe_{0.98}S$ affects both the crystallographic and spin-rotation transitions of the iron sulfide. 2% impurity of $Ti^{2+}$ in FeS causes the increase in the difference between the spin rotation and ${\alpha}$ transition temperature by as much as 10 K compared with that for FeS. Both 1c and 2c structures coexist in the range between the ${\alpha}$ transition temperature and approximately 26 K, with a smaller hyperfine field corresponding to the 1c structure. The spin-rotation temperature for $Ti_{0.02}Fe_{0.98}S$ was measured to be 365 K, which is 10 K lower than the ${\alpha}$ transition temperature. By the 2% impurity of $Ti^{2+}$ in FeS the N$\'{e}$el temperature appreciably is not affected.