• Title/Summary/Keyword: TiN films

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A comparative study on mechanical properties of TiN and TiAlN films prepared by Arc Ion Plating Technique (아크 이온 플레이팅법에 의해 증착된 TiN과 TiAlN 박막의 기계적 특성 비교)

  • 윤석영;이윤복;김광호
    • Journal of Surface Science and Engineering
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    • v.35 no.4
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    • pp.199-205
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    • 2002
  • TiN and TiAlN films were deposited on SKD 11 steel substrates by an arc ion plating (AIP) technique. The crystallinity and morphology for the deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The mechanical properties of both films were investigated through the indentation, impact, and wear test. Those films fairly adherent to SKD 11 steel substrate, showed hardness values of 2300 $\pm$ 100kg/$\textrm{mm}^2$ and 3200 $\pm$ 100kg/$\textrm{mm}^2$ with a load of 25g, respectively. During impact test, TiAlN films showed much superior impact wear resistance to TiN films. It could be suggested that the TiN films was failed relatively by plastic deformation with oxidation during impact test, while TiAlN films was failed by brittle fracture and resisted the oxidation by the impact energy. The friction coefficient of TiAlN films became lower than that of TiN films at high sliding speed condition although it was higher than that of TiN films at low speed. Therefore, TiAlN films was suggested to be more advantageous than TiN films for high speed machining fields.

The Characteristics of Frictional Behavior, Wear and Corrosion Resistance of Textured TiN Coated Layer (TiN 코팅층 집합조직의 변화에 따른 마찰, 마멸과 내부식 특성)

  • 김희동;김인수;성동영;이민구
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2003.05a
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    • pp.99-104
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    • 2003
  • TiN coated films show a good mechanical properties, high thermal properties and wear, erosion and corrosion resistance and are widely used as a coating materials in tools, ornaments, parts and semiconductors. In spite of these good properties, the fracture of TiN coated films occur during use. The fracture of TiN thin films is related to their microstructure. Especially, the life of TiN coated layer is related to the texture of the TiN films. One researcher suggested that the corrosion and erosion resistance of the TiN thin films is related to a uniform and dense structure of films. In this study, we studied the relationships between textures and friction coefficient, erosion and corrosion in TiN coated films. The flatness of (115) texture surface of TiN thin films is flatter than that of (111) texture surface. The friction coefficient of (115) texture surface of TiN thin films is similar with that of (111) texture surface. The wear resistance of (115) texture surface of TiN thin films is better than that of (111) texture surface. The erosion and corrosion resistance of (115) texture surface of TiN thin films is better than that of (111) torture surface. As well as texture, the wear, erosion and corrosion of TiN thin films has to consider defects such as pinholes, cracks, surface roughness and open columnar structure. The life of TiN coated products is influenced by the properties of wear, erosion, and corrosion resistance of TiN thin films and is related to texture of TiN coated films, density of pinholes and cracks, density of structure, and surface flatness.

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High Temperature Oxidation Characteristics of the (Ti, Al)N Coating on the STS 304 by D.C. Magnetron Sputtering (D.C. Magnetron Sputter를 이용한 (Ti, Al)N 피막의 고온산화특성)

  • 최장현;이상래
    • Journal of Surface Science and Engineering
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    • v.25 no.5
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    • pp.235-252
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    • 1992
  • (Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

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Physical Properties of TiN films grown by ALD (ALD법으로 증착한 TiN막의 특성)

  • 김재범;홍현석;오기영;이종무
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.159-165
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    • 2002
  • The physical properties of the TiN films deposited by ALD using $TiCl_4$and $NH_3$have been investigated. The TiN deposition rate is ~0.6 $\AA$ under an optimum deposition condition and the resistivity of the TiN films is 200~350 $\mu\Omega$cm . According to the XRD analysis results TiN films are crystallized in the ALD process window. AES analysis results show that the Cl impurity concentration in the TiN films is lower than 1 at% and that the atomic ratio of the TiN films is 1:1. Also it is found by SEM observation that the step coverage of the TiN films on which TiN films with trenches the aspect ratio of which is 10:1 is excellent.

Syntheses and properties of Ti2AlN MAX-phase films

  • Zhang, Tengfei;Myoung, Hee-bok;Shin, Dong-woo;Kim, Kwang Ho
    • Journal of Ceramic Processing Research
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    • v.13 no.spc1
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    • pp.149-153
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    • 2012
  • Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 ℃ and 450 ℃, respectively. A vacuum annealing of those films at 800 ℃ for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.

The Study of Color and Hardness of TiN Thin Film by UBM Sputtering System (UBM Sputtering System에 의한 TiN막의 색상과 경도에 관한 연구)

  • Park, Moon Chan;Lee, Jong Geun;Joo, Kyung Bok
    • Journal of Korean Ophthalmic Optics Society
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    • v.14 no.1
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    • pp.57-62
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    • 2009
  • Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The color and hardness of deposited TiN films was investigated. Methods: The cross sections of deposited films on silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS, the components of the inner parts of the films were observed by XPS depth profiling. XPS high resolution scans and curve fittings of deposited films were performed for quantitative chemical analysis, Vickers micro hardness measurements of deposited films were performed with a nano indenter equipment. Results: The colors of deposited films gradually changed from light gold to dark gold, light violet, and indigo color with increasing of the thickness. It could be seen that the color change come from the composite change of three compound,$TiO_{x}N_{y}$, $TiO_2$, TiN. Especially, the composite change of$TiO_{x}N_{y}$ compound was thought to affect the color change with respect to thickness. Conclusions: Deposited films had lower than the value of general TiN film in Vickers hardness, which was caused by mixing three TiN, $TiO_2$,$TiO_{x}N_{y}$ compound in the deposited films. The increasing and decreasing of micro hardness with respect to thickness was thought to have something to do with the composite of TiN in the films.

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Adhesion of Human Osteoblasts Cell on TiN Thin Film Deposited by Cathodic Arc Plasma Deposition

  • Pham, Vuong Hung;Kim, Sun-Kyu;Le, Vinh Van;Kwon, Byoung-Se
    • Journal of Surface Science and Engineering
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    • v.41 no.6
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    • pp.264-268
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    • 2008
  • Interaction between human osteoblast and TiN films was conducted in vitro. TiN films were produced by cathodic arc plasma deposition. The surface was characterized by atomic force microscopy (AFM). TiN films, glass substrates and Ti films were cultured with human osteoblasts for 48 and 72 h hours. Actin stress fiber patterns and microtubules of osteoblasts were found slightly more organized and distributed on TiN films compared to those on the Ti films and the glass substrates. Human osteoblasts also showed slightly higher cell attachment, proliferation, and focal contact adhesion on TiN films compared to those on Ti films and glass substrates. Our results demonstrated that TiN films showed slightly better cellular adhesion of osteoblasts than Ti films and glass substrates in a short-time culture period.

A Study on the Phase Transformations of (TiAl)N Films Deposited by TFT Sputtering System (TFT(Two-Facing-Targets) 스퍼터장치에 의해 증착된 (TiAl)N 박막의 상변태에 관한 연구)

  • Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.5
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    • pp.281-287
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    • 2005
  • Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

Deposition Behaviors of Ti-Si-N Thin Films by RF Plasma-Enhanced Chemical Vapor Deposition. (RF-PECVD법에 의한 Ti-Si-N 박막의 증착거동)

  • 이응안;이윤복;김광호
    • Journal of Surface Science and Engineering
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    • v.35 no.4
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    • pp.211-217
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    • 2002
  • Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

A study of Compositional range of Ti-Si-N films for the ULSI diffusion barrier layer (ULSI 확산억제막으로 적합한 Ti-Si-N의 조성 범위에 관한 연구)

  • 박상기;강봉주;양희정;이원희;이은구;김희재;이재갑
    • Journal of the Korean Vacuum Society
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    • v.10 no.3
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    • pp.321-327
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    • 2001
  • Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

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