• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.589-597
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• 2010

In the present study, the effect of variation in alloying elements on the carbide formation behavior during casting and homogenization treatment of M2 high speed steels was investigated. M2 high speed steels of various compositions were produced by vacuum induction melting. Contents of C, Cr, W, Mo, and V were varied from the basic composition of 0.8C, 0.3Si, 0.2Mn, 4.0Cr, 6.0W, 5.0Mo, and 2.0V in weight percent. Homogenization treatment at $1150^{\circ}C$ for 1.5 hr followed by furnace cooling was performed on the ingots. Area fraction and chemical compositions of eutectic carbide in as-cast and homogenized ingots were analyzed. Area fraction of eutectic carbide appeared to be higher in the ingots with higher contents of alloying elements the area fraction of eutectic carbide also appeared to be higher on the surface regions than in the center regions of ingots. As a result of the homogenization treatment, $M_2C$ carbide, which was the primary eutectic carbide in the as-cast ingots, decomposed into thermodynamically stable carbides, MC and $M_6C$. The latter carbide was found to be the main one after homogenization. Fine carbides uniformly distributed in the matrix was found to be MC type carbide and coarsened by homogenization.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.539-543
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• 2001

ln this paper, the $Sr_{l-x}Ca_xTiO_3(0\leqx\leq0.2)-based$ grain boundary layer ceramics were fabricated to measure dielectric properties with the sintering temperature and the thermal treatment time. The sintering temperature and time were $1420~15206{\circ}C$, 4hours, and the thermal treatment temperature and time of the specimen were $l150^{\circ}C$, 1, 2, 3hours, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The average grain size was increased with increasing the sintering temperature, but it decreased up to 15mo1% with increasing content of Ca. X-ray diffraction analysis results showed that all specimens were the cubic structure, and the main peaks were moved to right and the lattice constant were decreased with increasing content of Ca. The appropriate thermal treatment time and temperature of CuO to obtain dielectric properties of $\varepsilon_r>50000,\; tan \delta<0.05\; and \;\DeltaC<\pm10%$ were 2hrs and $l150^{\circ}C$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.535-542
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• 2010

In this study, we used coal-based activated carbons and charcoal as startingmaterials, phenolic resin (PR) as a binder, and TOS as a titanium source to prepare $TiO_2$ combining spherical shaped activated carbon photocatalysts. The textural properties of the activated carbon photocatalysts (SACP) were characterized by specific surface area (BET), energy dispersive X-ray spectroscopy (XRD), scanning electron microscopy (SEM), iodine adsorption, strength intensity, and pressure drop. The photocatalytic activities of the SACPs were characterized by degradation of the organic dyes Methylene Blue (MB), Methylene Orange (MO), and Rhodamine B (Rh. B) and a chemical oxygen demand (COD) experiment. The surface properties are shown by SEM. The XRD patterns of the composites showed that the SACP composite contained a typical single, clear anatase phase. The EDX spectro for the elemental indentification showed the presence of C and O with Ti peaks. According to the results, the spherical activated carbon photocatalysts sample of AOP prepared with activated carbon formed the best spherical shape, a high BET surface area, iodine adsorption capability and strength value, and the lowest pressure drop, and the photocatalytic activity was better than samples prepared with charcoal. We compared the degradation effects among three kinds of dyes. MB solution degraded with the SACP is better than any other dye solutions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.205-212
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• 2002

The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.145-145
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• 2017

음극재에 사용되는 타이타니아 나노튜브($TiO_2$ nanotubes)는 높은 종횡비를 가지고 있으며, 기계적인 강도가 우수하고 화학적인 안정성이 높다. 그러나 낮은 전기전도도와 상대적으로 넓은 밴드갭(bandgap)은 다양한 활용 분야에 이 물질이 활용되는 것을 제한하고 있는 상황이다. 전기 화학적 분야에서 광화학 반응 또는 과전압에서 밴드갭을 줄이기 위한 타이타니아 나노튜브의 나노 구조 변형에 대한 많은 연구가 있어왔다. 본 연구에서는 산화 몰리브덴(Molybdenum oxide)을 촉매로 사용하여 타이타니아 나노튜브에 전기충격법을 이용하여 도핑했다. 생성된 타이타니아 나노튜브를 $450^{\circ}C$에서 1시간 30분 동안 가열하여 타이타니아 나노구조를 아나타제(anatase) 구조로 변형켰다. 타이타니아 나노튜브의 구조적인 변화를 scanning electron microscopy(SEM), energy-dispersive X-ray spectroscopy(EDS) 등을 통해 측정했고 UV-Visiblespectroscopy를 통해 도핑된 타이타니아 나노튜브의 밴드갭을 측정하였다. 몰리브덴이 도핑된 타이타니아 나노튜브는 기존의 타이타니아 나노튜브가 가지는 밴드갭인 3.0 ~ 3.2eV 범위보다 더 낮아진 2.6 ~ 2.8eV의 범위를 가지는 것을 확인하였다. 몰리브덴이 도핑된 타이타니아 나노튜브는 다양한 광촉매 분야에 적용될 수 있을 것으로 예상된다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.522-527
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• 2013

In this paper, We studied the change of surface and variation of elements on both electrodes of hydrogen generator of alkaline electrolysis in use of FE-SEM and SIMS. We used the stainless steel 316(600 ${\mu}m$) as electrode in condition of 25%KOH, $60^{\circ}C$ Temperature. The results show that the intensity of elements (C, Si, P, S, Ti, Cr, Mn, Fe, Ni, Mo) of Positive Electrode are decreased as much as about $10^1{\sim}10^3 $than the original electrode. Thickness of Positive Electrode is decreased about 40 ${\mu}m$ after chemical reaction. The negative electrode, however, shows a slight variation in the intensity of elements (C, Si, P, Fe, Ni, Mn, Mo) but Change of thickness and surface' shape of electrode show nothing after chemical reaction. The change in thickness and variation of Stainless Steel 316 cause the lifetime of electrode to be shorted. We also observed hydrogen, oxygen, potassium in both electrodes. Especially, The potassium is increased in proportional with depth of positive electrode. this means the concentration of alkali solutions is changed. and so we have to supply alkaline solution to generator in order to produce same quantity of hydrogen gas continuously. we hope that this study gives a foundation to develop the electrode for hydrogen generator of alkaline electrolysis.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.218-223
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• 1997

At the aim of finding a Fehased amorphous alloy with a wide supercooled liquid region (${\Delta}T_{x}=T_{x}-T_{g}$) before crystallization, the changes in glass transition temperatudfI$T_{g}$ and crystallization temperature ($T_{x}$) by the dissolution of additional M elements were examined for the $Fe_{80}P_{10}C_{6}B_{4}$(x~6at%. M= transition metals) amorphous alloys. The ${\Delta}T_{x}$ value is 27K for the Fe,,,P,,,C,,R, alloy and increases to 40K for the addition of M=4at%Hf, 4at%Ta or 4at%Mo. The increase in ${\Delta}T_{x}$ is due to the increase of $T_{x}$ exceeding the degree in the increase in $T_{g}$. The $T_{g}$ and $T_{x}$ increase with decreasing electron concentration (e/a) from about 7 38 to 7.05. The decrease of e/a also implies the increase in the attractive bonding state between the M elements and other constitutent elements. It is therefore said that $T_{g}$ and $T_{x}$ increase kith increasing attractive bonding force.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.