• Journal of Sensor Science and Technology
• /
• v.17 no.4
• /
• pp.295-302
• /
• 2008

$TiO_2,\;ZrO_2$, and $SiO_2$ were added in the concentration of 1 - 3 wt.% to improve long-term stability for the $SnO2$ thick film gas sensor. Short-term sensor resistances up to 90 h were measured to investigate the stabilization time of initial resistance in air. Long-term resistance drifts in air and in gas to 5000 ppm methane for the sensors annealed at $750^{\circ}C$ for 1 h and continuously heated at an operating temperature of $400^{\circ}C$ were also measured up to 90 days at an interval of 1 day. The long-term drifts in methane sensitivity for the three metal oxide-doped $SnO2$ sensors are closely related to methane sensitivity level, catalytic activity, and long-term drift in sensor resistance in air. Those stabilities are mainly discussed in terms of oxidation state and catalytic activity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.4
• /
• pp.226-230
• /
• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.69-69
• /
• 2000

(Ba, Sr)TiO3 (BST)[1-3] 박막은 유전상수가 크고 고주파에서도 유전특성 저하가 적기 때문에 ULSI DRAM(Dynamic Random Access Memory)에 응용 가능한 물질로 최근 각광을 받고 있다. 하지만, 아직 BST 박막을 DRSM에 바로 적용하기 위해선 몇 가지 문제점이 있다. 그 중 누설전류 문제는 디바이스 응용시 매우 중요한 요소이다. 특히, DRAM에서 refresh time와 직접적인 관련이 있어 디바이스 내의 신뢰도 및 전력소모를 결정하는 주된 인자가 된다. 지금까지, BST 박막의 인가전업, 온도, 그리고 전극물질에 따른 누설전류 현상들이 고찰되었고, 이에 관한 많은 전도기구 모델들이 제시되었다. Schottky emission, Poole-Frenkel emission, space charge limited conduction 등이 그 대표적인 예이다. 하지만 아쉽게도 BST 박막의 정확한 누설 전류 전도 기구를 완전히 설명하는데는 아직 한계가 있다. 따라서 본 연구에서는 제작된 BST 커패시터 내의 기본적인 전기적 성질을 조사하고, 정확한 누설전류 기구 규명에 초점을 두고자 한다. 이를 위해 기존의 여러 기구들과 비교 분석할 것이다. 하부전극으로 사용하기 위해 스퍼터링 방법으로 p-Si(100) 기판위에 RuO2 박막을 약 120nm 증착하였다. 증착전의 chamberso의 초기압력은 5$\times$10-6 Torr이하의 압력으로 유지시켰다. Ar/O2의 비는 이전 실험에서 최적화된 9/1로 하였다. BST 박막 증착 시 5분간 pre-sputtering을 실시한 후 하부전극 기판위에 BST 박막을 증착하였다. 증착이 끝난 후 시편을 상온까지 냉각시킨 후 꺼내었다. 전기적 특성을 측정하기 상부전극으로 RuO2와 Al 박막을 각각 상온에서 100nm 증착하였다. 이때 hole mask를 이용하여 반경이 140um인 원형의 상부전극을 증착하였다. BST 박막의 증착온도가 증가하고 Ar/O2 비가 감소할수록 제작된 BST-커패시터의 전기적 성질이 우수하였다. 증착온도 $600^{\circ}C$, ASr/O2=5/5에서 증착된 막의 누설전류는 4.56$\times$10-8 A/cm2, 유전상수는 600 정도의 값을 나타내었다. 인가전압에 따른 BST 커패시터의 transition-current는 Curie-von Schweider 모델을 따랐다. BST 박막의 누설전류 전도기구는 기존의 Schottky 모델이 아니라 modified-Schottky 무델로 잘 설명되었다. Modified-Schottky 모델을 통해 BST 박막의 광학적 유전율 $\varepsilon$$\infty$=4.9, 이동도 $\mu$=0.019 cm2/V-s, 장벽 높이 $\psi$b=0.79 eV를 구하였다.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.430-436
• /
• 1996

We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.173-173
• /
• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Journal of Energy Engineering
• /
• v.2 no.3
• /
• pp.258-267
• /
• 1993

A mathematical model has been developed to describe heat transfer phenomena in a PCM (phase change material) module for development of an energy recovery system. The PCM module, melting point of which is around 1673 K, consists of silicon(96.8%), aluminium(2.7%) and marginal amounts of impurities such as Ca, Fe and Ti. The module is covered by a capsule that consists of SiC(58%) and graphite(42%). Physical properties that are required for model predictions were cited from the references. The apparent capacity method and the postiterative method wert used in the mathematical model to describe the phase changing mechanism. Temperature and velocity of fluid are the major variables in the model calculation. For the gas temperature of 1773 K that simulates real operating conditions, the prediction shows that PCM is rapidly melted to axial direction. However, for the gas temperature of 3000 K that is higher than the real conditions, PCM is melted rapidly to the radial direction. The gas velocity has no influence on the melting phenomena of the PCM except when the gas velocity is relatively low. At the low gas velocity asymmetry of the temperature profiles in PCM is obtained.

• Proceedings of the Polymer Society of Korea Conference
• /
• 2006.10a
• /
• pp.325-325
• /
• 2006

Cationic polymerization of isobutyl vinyl ether using various metal halides was examined in toluene in the presence of an added base at $0^{\circ}C$. In conjunction with an appropriate weak base such as ethyl acetate or 1,4-dioxane, all metal halides but $FeBr_{3}\;and\;GaCl_{3}$ led to living cationic polymerization. The polymerization rates varied as follows: $FeBr_{3},\;GaCl_{3}\;>\;FeCl_{3}\;>\;SnCl_{4}\;>\;InCl_{3}\;>\;ZnCl_{2}\;>>\;AlCl_{3},\;HfCl_{4},\;ZrCl_{4}\;>\;EtAlCl_{2},\;BiCl_{3},\;TiCl4\;>>\;SiCl_{4}\;>\;GeCl_{4}$. This order partially corresponds to that of the equilibrium constant in the formation of a carbocation from a chloroalkane in the presence of a carbonyl compound. With extremely active Lewis acids, such as $FeBr_{3}\;and\;GaCl_{3}$, the use of a stronger base, THF, was required to achieve living polymerization.

• Journal of Conservation Science
• /
• v.30 no.4
• /
• pp.335-343
• /
• 2014

This study classified the result of non-metallic inclusion analysis and result of microstructure investigation on the ironware excavated in the Baekje region into Han River, Geum River, and Yeongsan River to estimate the iron making temperature and study the characteristics of regional and temporal characteristics of the heat treatment technology and steel making technology. Regardless of era, bloom iron and sponge iron are judged to be the major method for making as a directreduction process in all three regions. The result of the reinterpretation of the non-metallic inclusion by the oxide ternary constitutional diagram suggest that the temperature inside of the furnace is estimated to be between $1,100{\sim}1,300^{\circ}C$ while making the steel. The magnetic iron ores are the major raw material of steel ore and irons with high $TiO_2$ are estimated to use iron sands. Ironware with $CaO/SiO_2$ rate higher than 0.4% are considered to have artificially added the flux of calcareous materials. It was found that the iron making method is the solid caburizing-steel which caburizes low-carbon steels by the CO gas and $CO_2$ gas created when heating the forging furnace with charcoal. Also, the ironware manufacturers in the Baekje during 3rd century recognized the heat treatment technology as they performed carburizing process and quenching to intentionally increase the strength of necessary parts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.393-396
• /
• 2004

본 논문에서는 완충층용 MgO 박막을 P-type(100)Si 기판위에 작업가스 $Ar:O_2=80:20$, RF 파워 50W, 기판온도 $400^{\circ}C$, 10mtorr의 작업진공에서 $500{\AA}$ 증착하였다. 제작된 MgO/Si 기판위에 RF Magnetron sputtering법으로 작업가스 $Ar:O_2$의 비율을 90:10, 80:20, 70:30으로 변화하면서 $BST(Ba_{0.5}Sr_{0.5}TiO_3)$ 박막을 약 $2000{\AA}$ 증착하였다. XRD 측정결과 작업가스비의 변화에 관계없이(110)BST와 (111)BST 피크만이 관찰되었으며 작업가스 $Ar:O_2=80:20$에서 가장 양호한 결정성을 나타내었다. I-V 측정결과 인가전계 ${\pm}100kV/cm$에서 $10^{-7}A/cm^2$이하의 양호한 누설전류 특성을 보여주고 있으며 C-V 측정결과 작업가스 $Ar:O_2$의 비율 90:10, 80:20, 70:30에서의 비유전율은 각각 283, 305, 296으로서 작업가스비 80:20에서 제작된 박막의 특성이 가장 우수하였다. 작업가스비 80:20에서 제작된 박막의 SEM 측정결과 결정이 성장되었음을 확인할 수 있었고 그레인의 크기는 약 10nm였다.

• Proceedings of the Korean Society for Emotion and Sensibility Conference
• /
• 2001.05a
• /
• pp.147-155
• /
• 2001

Nasucon lamp and Russian ones, which are coated with some special materials on the glass bulb, gave good clinical results for a cancer therapy. They are experimentally studied with Automatic Bioelectric Response Recorder on the six placements of the electrodes (two feet, two hands and two foreheads). They reduced the current rather than the control (natural) state. However infrared lamp and Chinese God light did not reduced the value current. Hemoglobin in blood. Brown gas, Ti$_3$SiC$_2$ and Nasucon have planar crystallizing $\pi$-bonding bonding layer and covalent bonding one in sequence commonly and thus the alternating magnetic fields are protected. Nasucon lamp and Russian ones utilized electric bulbs in order to generate alternating magnetic fields and to produce absorbing force.