• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.3
• /
• pp.207-213
• /
• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• Journal of the Korean Society of Safety
• /
• v.20 no.2 s.70
• /
• pp.26-31
• /
• 2005

The strong continuous fiber reinforced metal matrix composites (MMCs) are recently used in aerospace and transportation applications as an advanced material due to its high strength and light weight. Unidirectional fiber-metal matrix composites have superior mechanical properties along the longitudinal direction. However, the applicability of continuous fiber reinforced MMCs is somewhat limited due to their relatively poor transverse properties. Therefore, the transverse properties of MMCs are significantly influenced by the properties of the fiber/matrix interface. In order to be able to utilize these MMCs effectively and with safety, it must be determined their elastic plastic behaviors at the interface. In this study, the interfacial stress states of transversely loaded unidirectional fiber reinforced metal matrix composites investigated by using elastic-plastic finite element analysis. Different fiber volume fractions $(5-60\%)$ were studied numerically. The interlace was treated as three thin layer (with different properties) with a finite thickness between the fiber and the matrix. The fiber is modeled as transversely isotropic linear-elastic, and the matrix as isotropic elastic-plastic material. Using proposed model, the effects of the interface region and fiber arrangement in MMCs on the distributions of stress and strain are evaluated. The stress distributions of a thin multi layer interface have much less changes compared with conventional perfect interface. The analyses were based on a two-dimensional generalized plane strain model of a cross-section of an unidirectional composite by the ANSYS finite element analysis code.

• Korean Journal of Materials Research
• /
• v.33 no.11
• /
• pp.465-474
• /
• 2023

The effects of La³⁺ substitution for Sr²⁺-site on the crystal structure and the dielectric properties of (Ba_0.7Sr_0.3-3x/2La_x) (Ti_0.9Zr_0.1)O₃ (BSLTZ) (0.005 ≤ x ≤ 0.02) ceramics were investigated. The structural characteristics of the BSLTZ ceramics were quantitatively evaluated using the Rietveld refinement method from X-ray diffraction (XRD) data. For the specimens sintered at 1,550 ℃ for 6 h, a single phase with a perovskite structure and homogeneous microstructure were observed for the entire range of compositions. With increasing La³⁺ substitution (x), the unit cell volume decreased because the ionic size of La³⁺ (1.36 Å) ions is smaller than that of Sr²⁺ (1.44 Å) ions. With increasing La³⁺ substitution (x), the tetragonal phase fraction increased due to the A-site cation size mismatch effect. Dielectric constant (ε_r) increased with the La³⁺ substitution (x) due to the increase in tetragonality (c/a) and the average B-site bond valence of the ABO₃ perovskite. The BSLTZ ceramics showed a higher dielectric loss due to the smaller grain size than that of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ ceramics. BSLTZ (x = 0.02) ceramics met the X7R specification proposed by the Electronic Industries Association (EIA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.73-74
• /
• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.11-11
• /
• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.83-83
• /
• 2017

생체재료의 표면은 이식과 동시에 생체계면의 역할을 하게 되어, 일련의 생물학적 반응이 시작되고 진행되는 중요한 장소가 된다. 초기에 생체계면에서 일어나는 단백질 흡착이나 염증반응을 비롯한 생물학적 반응들은 궁극적으로 임플란트의 성패를 좌우할 만큼 중요하다. 골융합을 개선하기 위한 다른 방법으로 생체불활성의 타이타늄 (Ti)과 골조직의 능동적인 반응을 이루기 위해 생체활성 표면을 부여함으로서 계면에서의 골형성 반응을 증진시키는 방법이 이용된다. 생체불활성의 Ti과 Ti합금은 골조직과 직접적인 결합을 이루지 못하므로, 골조직과의 반응을 향상하기 위해 여러 종류의 생체활성 재료를 코팅하는 방법이 연구되어 왔고, 이 중 생체의 변화와 가장 유사한 하이드록시아파타이트 코팅이 가장 대중적인 방법으로 사용되었으며 이는 초기 골형성을 촉진하는 것으로 알려졌다. 치과용 임플란트의 표면형상과 화학조성이 골 융합에 영향을 미치는 가장 중요한 인자이므로 최근의 연구동향은 이들 두 가지 표면특성을 결합함으로서 결과적으로 최적의 골세포반응을 유도하고, 골융합 후 골조직과의 micromechanical interlocking에 의해 임플란트의 안정성에 중요한 역할을 하는 마이크론 단위의 표면조도와 표면 구조를 유지하면서, 부가적으로 골 조직 반응을 능동적으로 개선할 수 있는 생체활성 성분을 부여하여 골 융합에 상승효과를 이루기 위한 표면처리법에 관해 많은 연구가 요구되어지고 있다. 따라서 골을 구하는 원소인 망간과 실리콘으로 치환된 하이드록시아파타이트를 플라즈마 전해 산화법으로 코팅하여 세포와 잘 결합할 수 있는 표면을 제공함으로써 골 융합과 치유기간을 단축시킬 수 있을 것으로 사료된다. 실험방법은 시편은 치과 임플란트 제작 합금인 Ti-6Al-4V ELI disk (grade 5, Timet Co., USA; diameter, 10 mm, thickness, 3 mm)이며, calcium acetate monohydrate, calcium glycerophosphate, manganese(II) acetate tetrahydrate, sodium metasilicate을 설계조건에 따라 혼합 제조된 전해질 용액을 이용하여 플라즈마 전해 산화법으로 표면 코팅을 실시하였다. 각 시편의 플라즈마 전해시 전압은 280V로 인가하였고, 전류밀도는 70mA로 정전류를 공급하여 해당 인가전압 도달 후 3분 동안 정전압 방식을 유지하였다. 코팅된 피막 표면을 주사전자현미경과 X-선 회절분석을 통하여 미세구조 및 결정상을 관찰하였다. 또한 코팅된 표면의 생체활성 평가는 정량적으로 평가하기 위해 동전위시험과 AC 임피던스를 통하여 시행하였다. 분극거동을 확인하기 위해 potentiostat (Model PARSTAT 2273, EG&G, USA)을 이용하여 구강 내 환경과 유사한 $36.5{\pm}1^{\circ}C$의 0.9 wt.% NaCl에서 실시하였다. 전기화학적 부식 거동은 potentiodynamic 방법으로 조사하였고 인가전위는 -1500 mV에서 2000 mV까지 분당 1.67 mV/min 의 주사속도로 인가하여 시험을 수행하였다. 임피던스 측정은 potentiostat (Model PARSTAT 2273, EG&G, USA)을 이용하였으며, 측정에 사용한 주파수 영역은 10mHz ~ 100kHz 까지의 범위로 하여 조사하였고 ZSimWin(Princeton applied Research, USA) 소프트웨어를 사용하여 용액의 저항, 분극 저항 값을 산출하였다. 망간의 함량이 증가할수록 불규칙한 기공을 보였으며, 실리콘은 $TiO_2$ 산화막 형성을 저해하는 경향을 확인할 수 있었다. 단독으로 표면을 처리한 경우보다 두 가지 원소를 이용해 복합 표면처리를 시행한 경우가 내식성이 좋아 임플란트과의 골 유착에 긍정적인 영향을 미칠 것으로 사료된다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1104-1105
• /
• 2006

Several boride sintered bodies such as $TiB_2$, $ZrB_2$, and $SiB_6$ were previously reported. In the present study, the sinterability and physical properties of chromium boride $(CrB_2)$ containing chromium carbide $(Cr_3C_2)$ sintered bodies were investigated in order to determine its new advanced material. The samples were sintered at desired temperature for 1 hour in vacuum under a pressure by hot pressing. The relative density of sintered bodies was measured by Archimedes' method. The relative densities of $CrB_2$ addition of 0, 5, 10, 15 and 20 mass% $Cr_3C_2$ composites were 92 to 95%. The Vickers hardness of the $CrB_2$ with 10 and 15 mass% $Cr_3C_2$ composites were about 14 and 15 GPa at room temperature, respectively. The Vickers hardness at high temperature of the $CrB_2$ addition of 10 mass% $Cr_3C_2$ composite decreased with increasing measurement temperature. The Vickers hardness at 1273 K of the sample was 6 GPa. The Vickers hardness of $CrB_2$ addition of $Cr_3C_2$ composites was higher than monolithic $CrB_2$ sintered body. The powder X-ray diffraction analysis detected CrB and $B_4C$ phases in $CrB_2$ containing $Cr_3C_2$ composites.

• Journal of the Mineralogical Society of Korea
• /
• v.20 no.4
• /
• pp.267-275
• /
• 2007

Melting slag generated from municipal-incinerator ash contains lots of impurities which have adverse effects on zeolite synthesis. These impurities are detrimental to zeolite synthesis, and the yield and purity of zeolite was decreased. And thus its performance is lowered. In melting slag, there are lots of components such as $Fe_2O_3$, FeO and CaO. To remove these impurities, we treated the melting slag with hydrochloric acid at initial pH 1, 3, 5, and 7. After the treatment, the $SiO_2,\;Fe_2O_3,\;and\;TiO_2$ ratios increased, but the $Al_2O_3,\;FeO,\;CaO,\;Na_2O$ and MgO ratios decreased. We reacted these treated slag in a NaOH solution under hydrothermal conditions at $80^{\circ}C$. The hydrothermal products from the slag and the slag treated at pH 7 and pH 5 were determined to be tobermorite, whereas those at pH 3 and pH 1, Na-P1 and Na-X zoelite respectively. CaO was found to inhibit the synthesis of zeolite.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.28A no.10
• /
• pp.840-846
• /
• 1991

In case of the rapid thermal process by halogen lamps, an optical pyrometer is generally used to measure the temperature. It is, however, necessary to measure the temperature by the thermocouple when the process temperature is lower than 700$^{\circ}C$ and the correction of the temperature is required. Contact by the PdAg paste is commonly used out but in this case it is impossible to see the effect of surface states of the substrate, which is critical in the rapid thermal process. In this study, real temperature ramping speed of silicon substrates coveredwith various thin films such as SiO$_2$2, Si$_{3}N_{4}$, dopants, and conductive layers (Ti or Co) was investigated by a mechanical contact of the thermocouple. And the results were compared with the case in which the contact was made by the PdAg paste. Effect of process ambient was also studied. It was found that depending on the surface state, overshoot more than 100$^{\circ}C$ could occur. It was also found that in case of the substrate covered with conductive layers, mechanical contact might render the correct temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.248-249
• /
• 2007

The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were about -3.7%/K.