• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.59-65
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• 1999

In this paper, we had studied the possibility of application as Cu thin films from (hfac)Cu(VTMOS) which is very stable. Cu thin films had been studied as a function of deposition temperature. Substrates used in the experiment were PVD TiN on Si wafer. Deposition conditions were as follow : deposition temperature $50^{\circ}C$. Cu thin films were analyzed by AES, four point probe, XRD and SEM. All of deposited films were very pure and some favoring of <111> planes perpendicular to the substrate surface were observed. Cu thin films had two distinct growth rates at various deposition temperature. One is the surface reaction limited region below $200^{\circ}C$, and the other is the mass transport limited region above $200^{\circ}C$. The resistivity of deposited Cu thin films under the optimum deposition condition is $2.5mu\Omega.cm$ Thus, properties of deposited Cu thin films using (hfac)Cu(VTMOS) didn't show difference with Cu thin films from other precursors.

• Korean Journal of Soil Science and Fertilizer
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• v.34 no.6
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• pp.373-379
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• 2001

The weathering rates and change of chemical composition of 6 residual Entisols derived from granite, granite-gneiss, limestone, sandstone, shale, amd basalt in Korea were studied. The chemical composition of each profile with parent rocks were determined using XRF with the physico-chemical properties and the morphology of soils. In the A horizons of all the soils except Euiseong series, the content of clay, organic matter and cation exchange capacity(CEC) showed higher than those of C horizon, but bulk density and pH showed lower than C horizon. Clay content in the soil from sandstone was decrease with soil depth, which may caused by the elluriation. In total element analysis. $SiO_2$ was high in the soil from granite. granite-gneiss, sandstone and compare with basalt and limestone. $Fe_2O_3$ and MgO was high in the soil from basalt, limestone and shale compare with granite. granite-gneiss and sandstone. And ignition loss was particularly high in the soil from basalt and limestone. The rate of element loss was higher in base cations(Ca, K, Mg, Na) than Si, Al, Fe in the soils. The concentrations of $TiO_2$ in the A horizon compare with that of the C horizon was due to resulting from losses of other less stable elements existed. Considering with relative rate of each elements in soils, $SiO_2$ and $Al_2O_3$ which originated from sandstone and granite, granite-gneiss, sandstone, shale, and basalt were lost higher than those from lime tone, but loss of basic cations were more in the soil from limestone which may be rapid weathering of calcite. The magnitude of losses of the overall elements were increased in the order of the soils from sandstone and granite ${\gg}$ limestone and shale) granite-gneiss and basalt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.472-473
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• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• Journal of the Mineralogical Society of Korea
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• v.11 no.1
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• pp.20-31
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• 1998

Adsorption of metal elements onto illite and halloysite was investigated at $25^{\circ}C$ using pollutant water collected from the gold-bearing metal mine. Incipient solution of pH 3.19 was reacted with clay minerals as a function of time: 10 minute, 30 minute, 1 hour, 12 hour, 24 hour, 1 day, 2 day, 1 week, and 2 week. Twenty-seven cations and six anions from solutions were analyzed by AAs (atomic absorption spectrometer), ICP(induced-coupled plasma), and IC (ion chromatography). Speciation and saturation index of solutions were calculated by WATEQ4F and MINTEQA2 codes, indicating that most of metal ions exist as free ions and that there is little difference in chemical species and relative abundances between initial solution and reacted solutions. The adsorption results showed that the adsorption extent of elements varies depending on mineral types and reaction time. As for illite, adsorption after 1 hour-reaction occurs in the order of As>Pb>Ge>Li>Co, Pb, Cr, Ba>Cs for trace elements and Fe>K>Na>Mn>Al>Ca>Si for major elements, respectively. As for halloysite, adsorption after 1 hour-reaction occurs in the order of Cu>Pb>Li>Ge>Cr>Zn>As>Ba>Ti>Cd>Co for trace elements and Fe>K>Mn>Ca>Al>Na>Si for major elements, respectively. After 2 week-reaction, the adsorption occurs in the order of Cu>As>Zn>Li>Ge>Co>Ti>Ba>Ni>Pb>Cr>Cd>Se for trace elements and Fe>K>Mn>Al, Mg>Ca>Na, Si for major elements, respectively. No significant adsorption as well as selectivity was found for anions. Although halloysite has a 1:1 layer structure, its capacity of adsorption is greater than that of illite with 2:1 structure, probably due to its peculiar mineralogical characteristics. According to FTIR (Fourier transform infrared spectroscopy) results, there was no shift in the OH-stretching bond for illite, but the ν1 bond at 3695 cm-1 for halloysite was found to be stronger. In the viewpoint of adsorption, illite is characterized by an inner-sphere complex, whereas halloysite by an outer-sphere complex, respectively. Initial ion activity and dissociation constant of metal elements are regarded as the main factors that control the adsorption behaviors in a natural system containing multicomponents at the acidic condition.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.503-510
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• 2005

In this research, composite alumina was prepared to add the various promoters by sol-gel method and examined its thermal stability. After sintering at $1,200^{\circ}C$, the thermal stability resulted in following order, $Si{\fallingdotseq}La$ > Ti > $Ba{\fallingdotseq}Ce$ > Y > $Zr{\fallingdotseq}Mg$, in accordance with adding the promoters. Especially in case of silica-added alumina, a phase transformation temperature to ${\alpha}$-alumina increased about $150^{\circ}C$ and after sintering at $1,200^{\circ}C$, it showed to maintain in ${\gamma}$-form and ${\delta}$-form alumina phase. Also it showed an increase of surface area from $3m^2/g$ to $71m^2/g$ compared with pure ${\alpha}$-alumina. In the case of silicaadded alumina, the characterization change of this alumina particle resulted in a delay of phase transformation because Si-O-Al bond was increased when sintered at high temperature. In case of lanthanum-added alumina, there was a sintering delay phenomenon in inter-particles as $LaAlO_3$ structure existed. The existence of lanthanum structure was confirmed by XRD and XPS analysis. It appeared on the alumina surface as $La_2O_3$ structure when it was sintered under $1,000^{\circ}C$, as the perovskite structure of $LaAlO_3$ at above $1,000^{\circ}C$ and as the magneto-plumbite structure of $LaAl_{11}O_{18}$ at above $1,300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.107-107
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• 2000

최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

• Journal of Conservation Science
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• v.3 no.1 s.3
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• pp.13-18
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• 1994

Chemical analysis and metallographic observations of the iron slag were carried out in an attempt to estimate the old iron-making process. The slag containing $9.3\%\;TiO_2$ without Cu indicates that the ore used for smelting was sand iron, not rock ore. The phases identified in the slag were $ulv\ddot{o}spinel$, magnetite, $w\ddot{u}stite$, fayalite etc. This also supports the fact that the smelted ore was iron sand. The total amount of Fe and slag-making components$(=SiO_2+Al_2O_3+MgO+CaO)$ were $40.7\%\;and\;36.1\%$, respectively. These values were average ones found in the old slags formed in the ancient iron-making process. Assuming that $TiO_2$ in the ore combines with FeO, resulting in the formation of $ulv\ddot{o}spinel$, the estimated temperature of smelting was found to be about $1200^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.249-255
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• 1999

Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.