• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.139-142
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• 2002

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.217-222
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• 1998

Coating films of $SiO_2-TiO_2-AgO$ have been prepared on soda-lime-silica slide glasses and single crystal silicon wafer by the sol-gel method using a spin-coating technique. Commercially available tetraethyl orthosilicate, titanium trichloride, and silver-nitrates were used as starting materials. The heat treatment temperature of this coating films was $500^{\circ}C$ properly, obtained from TG-DTA result. The films with thickness of 310 nm were prepared by 5 times coating. In the case of l0 mol% AgO, the film showed a crack-free and smooth surface, but the higher Ago content exhibited the more pin hole and the segregated cluster of AgO. The IR absorbance of the films decreased in the range of 400 nm to 700 nm with the increase of annealing temperature. And the reflectance of the coating films decreased and the color was changed light yellow to white yellow with the increase of Ago content.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.1-5
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• 2006

We prepared 80 nm-thick TiSix on each 70 nm-thick amorphous silicon and polysilicon substrate using an RF sputtering with $TiSi_2$ target. TiSix composite silicide layers were stabilized by rapid thermal annealing(RTA) of $800^{\circ}C$ for 20 seconds. Line width of $0.5{\mu}m$ patterns were embodied by photolithography and dry etching process, then each additional annealing process at $750^{\circ}C\;and\;850^{\circ}C$ for 3 hours was executed. We investigated the change of sheet resistance with a four-point probe, and cross sectional microstructure with a field emission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM), respectively. We observe an abrupt change of resistivity and voids at the silicide surface due to interdiffusion of silicide and composite titanium silicide in the amorphous substrates with additional $850^{\circ}C$ annealing. Our result implies that the electrical resistance of composite titanium silicide may be tunned by employing appropriate substrates and annealing condition.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.2A
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• pp.129-136
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• 2011

Recently studies on functional concrete with a photocatalytic material such as $TiO_2$ have actively been carried out in order to remove air pollutants. The absorbtion of $TiO_2$ from those studies is applied by it being directly mixed into concrete or by suspension coated on the surface. When it comes to the effectiveness, the former process is less than that of the latter compared with the $TiO_2$ use. As a result, the direct coating of $TiO_2$ on materials' surface is more used for effectiveness. The Surface spread of it needs to have a more than $400^{\circ}C$ heat treat done to stimulate the activation and adhesion of photocatalysis. Heat treat consequently leads hydration products in concrete to be dehydrated and shrunk and is the cause of cracking. The study produces $TiO_2$ used Sol-gel method which enables it to be coated with a low temperature treat, applies it to pearlite using Lightweight Aggregate Concrete fixed with a low temperature treat and evaluates the spread performance of it. In addition to this, the size of pearlite is divided into two types: One is 2.5 mm to 5.0 mm and the other is more than 5.0 mm for the benefit of finding out the removal characteristics of $CH_3CHO$ whether they are affected by pearlite size, mixing method and ratio with $TiO_2$ and elapsed time. The result of this experiment shows that although $TiO_2$ produced by Sol-gel method is treated with 120 temperature, it maintains a high spread rate on the XRF(X ray Florescence) quantitative analysis which ranks $TiO_2$ 38 percent, $SiO_2$ 29 percent and CaO 18 percent. In the size of perlite from 2.5 mm to 5.0 mm, the removal characteristic of $CH_3CHO$ from a low temperature heated Lightweight concrete appears 20 percent higher when $TiO_2$ with Sol-gel method is spreaded on the 7 percent of surface. In other words, the removal rate is 94 percent compared with the 72 percent where $TiO_2$ is mixed in 10 percent surface. In more than 5.0 mm sized perlite, the removal rate of $CH_3CHO$, when $TiO_2$ is mixed with 10 percent, is 69 percent, which is similar with that of the previous case. It suggests that the size of pearlite has little effects on the removal rate of $CH_3CHO$. In terms of Elapsed time, the removal characteristic seems apparent at the early stage, where the average removal rate for the first 10 hours takes up 84 percent compared with that of 20 hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• Proceedings of the Membrane Society of Korea Conference
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• 1993.04a
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• pp.35-35
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• 1993

튜브형 $\alpha-Al_2O_3$ 담체에 졸-겔 침지코팅법과 가압코팅(pressurized coating) 법으로 boehmite 졸과 극미세 입자 SiO$_2$ 및 TiO$_2$ 졸을 코팅한 후 200$\circ$C~500$\circ$C 에서 열처리하여 복합분리막을 제조하였다.

• Journal of the Korean Ceramic Society
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• v.16 no.3
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• pp.135-141
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• 1979

This study seeks to find optimum conditions for the heating schedule of the Diopside-Devitrite system, to find the amounts and the kinds of nucleus which effect the crystal growth and forming nucleus. Generally, crystallization in the glass depends on the number of nucleus growing in the internal system and the rate of crystal growth. In order to obtain homogeneous polystalline phae, Diopside as MgO source and $ZrO_2$.$P_2O_5$, $TiO_2$, NaF, $CaF_2$ as nucleating agents were added to the $Na_2O$.CaO.$6SiO_2$ glass. The results obtained were Summarized as follows. 1) Optimum Batch Composition of base glass is 76.82 wt.% $SiO_2$, 5.84 wt.% CaO, 4.54 wt.% MgO and 9.80 wt.% $Na_2O$. 2) Best heating schedule.140$0^{\circ}C$(Melting)coolinglongrightarrow95$0^{\circ}C$reheatinglongrightarrow$1100^{\circ}C$coolinglongrightarrowRoom Temp. 3) The optimum amounts of $ZrO_2$.$P_2O_5$, $TiO_2$ and $CaF_2$ are 3wt.% and that of NaF is 4 wt.% as a nucleating agents.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.175-176
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• 1996

ppt/Ti/SiO2/Si 기판상에 고주파 마그네트론 스퍼터링 방식으로 ppZT 박막[두 께:3000$\AA$]을 증착하고 RTA 방식으로 후속 열처리[열처리온도:550~$650^{\circ}C$]를 실시하여 직 경 0.2mm 소자의 FECApps(ferroelectric cappacitors)를 제작하였다. 증착된 ppZT 박막을 강 유전성 pperovskite 결정상으로 만들기 위해 ppZT 박막의 열처리조건을 연구하였으며, 열처리 방식에 따른 ppZT 박막의 결정특성(상형상, 형상관찰, 성분분석 등)과 커패시터 소자의 전기 적 특성($\varepsilon$r,tan$\delta$,pp-E hysteresis curves, 누설전류 등)을 비교, 분석하였다.