• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.301-304
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• 2002

We investigated the structural and electrical properties of Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$(BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/$SiO_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/$O_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 m (RMS at $500^{\circ}C$, Ar:6 scrim, $O_2$:6 sccm). We have found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Environmental Engineering Research
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• 제10권5호
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• pp.239-246
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• 2005

The effect of Pt addition over $V_2O_5-WO_3/TiO_2$ catalyst supported on PRO-66 was investigated for NO reduction in order to develop the catalytic filter working at low temperature. Catalytic filters, $Pt-V_2O_5-WO_3/TiO_2/PRD$, were prepared by co-impregnation of Pt, V, and W precursors on $TiO_2$-coated ceramic filter named PRD (PRD-66). Titania was coated onto the pore surface of the ceramic filter using a vacuum aided-dip coating method. The Pt-loaded catalytic filter shifted the optimum working temperature from $260-320^{\circ}C$(for the catalytic filter without Pt addition) to $190-240^{\circ}C$, reducing 700 ppm NO to achieve the $N_x$ slip concentration($N_x\;=\;NO+N_2O+NO_2+NH_3$) less than 20 ppm at the face velocity of 2 cm/s. $Pt-V_2O_5-WO_3/TiO_2$ supported on PRD showed the similar catalytic activity for NO reduction with that supported on SiC filter as reported in a previous study, which implies the ceramic filter itself has no considerable interaction for the catalytic activity.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• 한국세라믹학회지
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• 제40권3호
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• pp.229-233
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• 2003

By using an oxynitride glass as a sintering additive, the effects of BN content on microstructure and mechanical properties of the hot-pressed and subsequently annealed SiC-BN composites were investigated. The microstructures developed were analyzed by image analysis. The morphology of SiC grains was strongly dependent on BN content in the starting composition. The aspect ratio of SiC decreases with increasing BN content and the average diameter of SiC shows a maximum at 5 wt% BN and decreases with increasing BN content in the starting powder. The fracture toughness increased with increasing BN content while the strength decreased with increasing BN content. The strength and fracture toughness of SiC or SiC-TiC composites were strongly dependent on the morphology of SiC grains, but the strength and fracture toughness of SiC-BN composites were strongly dependent on BN content rather than morphology of SiC grains. These results suggest that fracture toughness of SiC ceramics can be tailored by manipulating BN content in the starting composition. Typical fracture toughness and strength of SiC-10 wt% BN composites were 8 MPa$.$m$\^$1/2/ and 445 MPa, respectively.

• 한국결정성장학회지
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• 제10권3호
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• pp.211-218
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• 2000

$PbZrO_3$의 전구체 용액을 준비하여 spin coating법으로 Pt/Ti/$SiO_2$/Si 기판 위에 박막을 입힌 후 두가지 방법으로 열처리하여 $PbZrO_3$박막 결정의 형성을 조사하였다. 즉, 하나는 $500^{\circ}C$, $550^{\circ}C$, $600^{\circ}C$, $650^{\circ}C$ 및 $700^{\circ}C$로 가열된 전기로 속에 직접 삽입하여 결정화시켰으며, 다른 한가지 방법은 동일한 온도조건하에서 급속가열방식(RTA)으로 열처리하여 박막을 결정화시켰다. 또 전기로에 삽입하여 $700^{\circ}C$에서 1분, 10분, 20분, 30분 동안 열처리하여 시간의 변화에 따른 결정의 형성과정도 살펴보았다. PZ 박막을 전기로에 직접 삽입한 경우 $600^{\circ}C$에서 30분간 그리고 RTA의 경우 $650^{\circ}C$에서 1분간 열처리 하였을 경우 결정이 형성되었고, $700^{\circ}C$의 전기로에 삽입한 경우에는 10분 이상의 시간이 요구되었다. 그러나 양호한 결정 grain의 형성을 위해서는 $700^{\circ}C$에서 30분간 열처리하는 것이 4가지 열처리 시간 중 가장 좋은 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• 공업화학
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• 제7권2호
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• pp.269-279
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• 1996

SOL-GEL법을 이용하여 $SiO_2-TiO_2-V_2O_5$계의 다공성 비정질 촉매를 그 제조변수를 달리하면서 제조 하였다. 이들 촉매들을 사용하여 "모조 배가스 합성 및 미량 촉매 반응기" 상에서 NO 제거 활성 측정을 통한 Screening test를 실시하여 가장 우수한 촉매 활성을 나타내는 최적의 입자상 촉매를 선정하였다. 또, 입자상 촉매의 제조변수에 입각하여 비활성, 기통성이 우수한 cordierite monolith 담체위에 활성성분을 SOL-GEL법으로 반복 coating하여 monolith형 촉매들을 제조하였으며, 이들을 전형적인 S. C. R.(Selective Catalytic Reduction of NOx) 공정에 해당되는 반응 조건하에서 NOx 및 SOx의 동시제거 효과를 측정해 보았다. 아울러 동촉매들의 특성화를 위해 DTA, TGA, BET, $NH_3$ 및 NO TPD, ESCA, XRD 등을 실시하여 보았다.

• 한국세라믹학회지
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• 제39권11호
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• pp.1108-1112
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• 2002

산화물 제어봉 물질로서 $Dy_xTi_yO_z$ 소결체를 powder process에 의해 제조하였다. $Dy_2O_3+TiO_2$ 혼합분말의 소결성과 고용체의 상을 TMA와 XRD로써 각각 분석하였으며, 소결체의 비열과 열확산계수를 측정하여 열전도도를 구하였다. $Dy_xTi_yO_z$에서 Dy의 함량에 따라 소결성과 밀도가 변하였고 $3\;g\;Dy/cm^3\;Dy_xTi_yO_z$의 경우 $1580{\circ}C$의 소결온도에서 용융이 일어났다. $4.00\;g\;Dy/cm^3$ 소결체에는 $Dy_2TiO_5+Dy_2Ti_2O_7$의 두 상이 존재하며 $4.54\;g\;Dy/cm^3$의 경우 $Dy_2TiO_5$의 단일 상만이 존재하는 결과를 보였다. $Dy_xTi_yO_z$의 열전도도는 $25~600{\circ}C$ 범위에서 온도에 따라 큰 변화가 없으며 $1600{\circ}C$ 소결체가 1.69∼1.78 W/mK, 1550$^{\circ}C$ 소결체의 경우에는 1.49~1.55 W/mK이었다.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.942-946
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• 2004

The crystalline and dielectric properties on Al$_2$O$_3$ filled glass frit (CaO-Al$_2$O$_3$-SiO$_2$-MgO-B$_2$O$_3$) with admixtures of TiO$_2$ have been investigated. The dielectric constant value of 7.5 ∼ 7.8, qualify factor value of 700 were obtained for glass frit : Al$_2$O$_3$(50 : 50 wt%) ceramics. Addition of TiO$_2$ less than 5 wt% slightly increased the dielectric constant from 7.8 to 8.8 due to higher dielectric constant of TiO$_2$. With increasing the amount of TiO$_2$ up to 5 wt%, the temperature coefficient of dielectric properties was improved. When the TiO$_2$ 5 wt% were added, dielectric properties were dielectric constant 8.8, quality factor 840 and the temperature coefficient of dielectric 45 ppm/$^{\circ}C$ at a sintering temperature 920$^{\circ}C$.