• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.290-293
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• 1999

(Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ thin films were fabricated at different RTA temperatures and thicknesses by Sol-Gel method. Solution consisting of acetate powders and titanium isopropoxide in a mixture of acetic acid and ethylene glycol were spin coated onto Pt/Ti/SiO$_2$/Si substrates. The films were annealed in the temperature range of 650~80$0^{\circ}C$ for 3 minutes by rapid thermal annealing. These BST thin films were fully crystallized at 75$0^{\circ}C$ and showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~468 and dielectric loss was ~0.025 at a thickness of approximately 4000$\AA$.EX>.>.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.930-935
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• 2004

$({Li}_{0.5}0{La}_{0.5}){TiO}_3$ (LLTO) solid electrolyte was grown on LiCo{O}_2 (LCO) cathode films deposited on $Pt/Ti{O}-2/Si{O}_2/Si$ substrate using pulsed laser deposition for all-solid-state lithium microbattery. LLTO solid electrolyte exhibits an amorphous phase at various deposition temperatures. LLTO films deposited at 10$0^{\circ}C$ showed a clear interrace without any chemical reaction with LCO, and showed an initial discharge capacity of 50 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 90 % after 100 cycles with Li anode in 1mol$ LiCl{O}_4$ in propylene carbonate (PC). The increase of capacity retention in LLTO/LCO structure than LCO itself was attributed to the structural stability of LCO cathode films by the stacked LLTO. The cells of LLTO/LCO with LLTO grown at $100^{\circ}C$ showed a good cyclic property of 63.6 % after 300 cycles. An amorphous LLTO solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium microbattery.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.99-99
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• 2000

본 논문에서는 RF Magnetron Sputtering 방법으로 Ba0.5Sr0.5TiO3 박막을 Pt/Ti/SiO2/Si 기판위에 증착하였다. Ar과 O2의 가스비는 90:10부터 50:50까지 O2의 함유비율을 10씩 증가시켰으며, 모든 조건에서 증착온도는 실온으로 설정하였다. Ba0.5Sr0.5TiO3 박막의 증착후 각 가스비에 따른 동일한 샘플에 대해 RTA(Rapid Thermal Anneal) 장비를 이용하여 $600^{\circ}C$에서 열처리는 하여 열처리 효과에 대한 특성도 조사하였다. 최종적으로 제작한 BST 커패시터는 Pt/BST/Pt 구조를 갖는 MIM(Metal-Insulator-Metal) 구조의 커패시터였으며 상.하부 전극은 전기적 특성이 우수한 Pt를 사용하였다. 제작된 BST 커패시터를 대해 유전 특성을 조사하기 위해 C-V 측정을 한 결과 산소 함유량이 증가함에 따라 유전율의 증가를 보여주었으며, 제작된 샘플 중 산소 함유량이 30인 샘플은 300이상의 우수한 유전율을 나타내었다. 또한 누설 전류특성에서는 모든 샘플에 대해 1.0V의 인가전압에서 1.0$\times$106A/cm2 이하의 누설 전류 밀도 값을 가져 전기적으로도 안정된 커패시터 구조임을 확인하였다. 또한 막의 증착상태와 미세구조관찰을 위해 SEM 측정을 하였고 구성성분 결정 구조를 알기 위해 XRD 측정도 시행하였다. 결과적으로 본 논문에서 제작된 커패시터 중 Sr/O의 비율이 70:30인 샘플이 가장 우수한 유전특성을 나타내었고, 이 샘플의 유전특성과 누설 전류 특성은 차세대 메모리인 1GigaByte급 DRAM에 적용 가능한 조건들을 만족시켰다.

• 한국세라믹학회지
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• 제32권9호
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• pp.977-988
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• 1995

Several oxide (ZrO2, Al2TiO5, reactive Al2O3) and nonoxide (SiC, Si3N4, "ALON" (5AlN.9Al2O3)) additives were used as a microfiller for alumina based LCC (Low-Cement-Castable). High temperature prooperties (HMOR, softening under load) and the phase changes of developed LCC on various sintering temperatures were examined. In addition, thermal shock test and corrosion test were accomplished. Based on these data the effects of each microfiller on the properties of LCC were established comparing to those of the commercial LCC with amorphous silica as a microfiller. The castables, containing reactive alumina, ZrO2 and "ALON" (5AlN.9Al2O3) as a first portion, exhibited considerably higher HMOR-values over 100$0^{\circ}C$, better creep behavior, and thermal shock resistance than those of castables with amorphous silica. The LCC with 5% Al2TiO5 showed no corrosion against molten aluminum.nst molten aluminum.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1456-1458
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• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1835-1837
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• 2005

$Bi_{3.25}Y_{0.75}Ti_3O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and dielectric properties of the BYT thin films. The BYT thin films were crystallized well at annealing temperature of $750^{\circ}C$ for 30min. Increasing the annealing temperature, the peak intensity of (117) and c-axis orientation were increased. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The thickness of the BYT thin films were 350nm. The dielectric constant and dielectric loss at a frequency of 100KHz were 73.3 and 0.021, respectively. The BYT thin films can be used as capacitors in the Ferroelectric Random Access Memory device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.575-578
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• 2000

In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.296-296
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• 2007

Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• 한국광학회지
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• 제5권4호
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• pp.499-504
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• 1994

불꽃가수분해 증착방법으로 $SiCl_{4}$, TMB, $TiCL_{4}$등을 사용하여 Ti doped BSG 실리카 입자박막을 실리콘 기판위에 증착하고 증착된 입자층을 녹여서 집적광학용 박막을 제작하였다. 박막의 증착 속도는 $0.5{\mu}m$분 이상으로서 수십 ${\mu}m$의 후막을 빠르게 증착할 수 있었으며 $TiO_{2}$의 첨가량에 따라 BSG 박막의 굴절률을 0.3% 이상 변화시킬 수 있었다. 그 결과 통신용 광섬유와 크기 및 굴절률 분포가 BSG박막의 굴절률을 0.3% 이상 변화시킬 수 있었다. 그 결과 통신용 광섬유와 크기 및 굴절률 분포가 유사한 광도파로를 제작하였다. 보통 B의 도판트로는 $BCl_{3}$를 쓰나 여기서는 TBM를 사용한 결과 TBM도 B의 도판트로 적합함을 알았다. B의 첨가에 의하여 실리카 입자막의 녹는점을 $1200^{\circ}C$로 낮출 수 있었다. 또한 FTIR에 의한 박막의 조성비분석 결과 BSG박막에 $B_2O_3$ 함량이 최대 10mol%로 나타났다.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.