Structural and Dielectric Properties of Ferroelectric $Bi_{4-x}Y_xTi_3O_{12}$ Thin Films

$Bi_{4-x}Y_xTi_3O_{12}$ [BYT] 강유전 박막의 구조 및 유전특성

$Bi_{3.25}Y_{0.75}Ti_3O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and dielectric properties of the BYT thin films. The BYT thin films were crystallized well at annealing temperature of $750^{\circ}C$ for 30min. Increasing the annealing temperature, the peak intensity of (117) and c-axis orientation were increased. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The thickness of the BYT thin films were 350nm. The dielectric constant and dielectric loss at a frequency of 100KHz were 73.3 and 0.021, respectively. The BYT thin films can be used as capacitors in the Ferroelectric Random Access Memory device.