• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.741-748
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• 2010

We studied the corrosion and oxidation properties of Fe-18Cr-0.4Nb-(0.1~0.6)Ti-(1~3)Si-(0.5~2)Mo stainless steel. The resistance to general and pitting corrosion was evaluated and the results were analyzed by Response Surface Methodology (RSM) as a function of alloy composition. The effects of alloy composition and heat treatment on the oxidation resistance were also examined. Mo increased both general corrosion resistance and pitting corrosion resistance. Si improved the resistance of the alloys to pitting corrosion. Si was also beneficial for general corrosion resistance of the alloys containing Mo at more than 1 wt.%. However, Mo was detrimental when its content was lower. Effects of Ti on general corrosion properties appeared to be weak and a high concentration of Ti appeared to deteriorate pitting resistance. The thickness of the oxidation scale increased and adhesion of the scale worsened as the temperature increased from $800^{\circ}C$ to $900^{\circ}C$. Weight gain of the alloys due to oxidation at $900^{\circ}C$ clearly showed that the resistance to oxidation is improved by annealing at $860^{\circ}C$ and an increase of Si content.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.229-235
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• 2001

Uncooled pyroelectric thin-film (Ba,Sr)TiO$_3$ infrared detectors thermally isolated from Si-substrate by Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-membrane have been fabricated, and figures of merit for detectors were examined. The detector at $25^{\circ}C$ in air showed relatively high voltage responsivity of about 168.8 V/W and low specific detectivity of about 2.6$\times$10$^4$cm.Hz$^{1}$2//W at 1 Hz-chopping frequency because of very small signal-to-noise voltage ratio. It could be found that both thermal noise voltage and thermal time constant of the detector were very large by analyzing dependences of output waveforms on chopping frequency and temperature.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.377-382
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• 1998

Atomic layer deposition(ALD) of amorphous TiN films on $SiO_2$ between 17$0^{\circ}C$ and 21O$^{\circ}C$ has been investigated by alternate supply of reactant sources, Ti[N($C_2,H_5,CH_3)_2]_4$ [tetrakis(ethylmethylamminoltitanium: TEMAT] and $NH_3$. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, $NH_3$. gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 1.6 monolayer(MU per cycle with sufficient pulse times of reactant sources at 20$0^{\circ}C$. The results suggest that film thickness per cycle could be beyond 1 MLicycie in ALD, which were explained by rechemisorption mechanisms of reactant sources. The ideal linear relationship be¬tween number of cycles and film thickness is confirmed. As a results of surface limited reactions of ALD, step cover¬age was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was seperated from $NH_3$ by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4 at%.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.255-259
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• 1999

The effects of $SiO_2$ and MnO addition on the sinterability and the electrical properties of 0.4mol% Nb-doped SrTiO3 varistor were investigated. The $SiO_2$ content was fixed at 0.3mol% and the MnO content varied from 0 to 1.0mol%. With 0.3 mol% $SiO_2$ and 0.3 mol% MnO addition, optimum density was obtained by sintering at $1200^{\circ}C$ without excess liquid phase. Impedance spectroscopy was performed on the sintered specimens with 0.3 mol% $SiO_2$ and various MnO contents. It was found that the resistivities of grains was increased with increasing MnO content. The dielectric constant was measured to be above 50000 in the specimen with 0.3~1.0mol% Mn content. The non-linear coefficient increased substantially with MnO addition, and it varied from 1 to 9 depending on the MnO content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.20-26
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• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.68-72
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• 2005

본 논문에서는 $Bi_{3}Ti_{4}O_{12}$에 Nd를 치환했을 때 향상되는 강유전체 특성을 sol-gel 방법을 이용하여 분석하였다. 이를 위해 $10\;wt\%$의 $12\%$과량의 Bi가 첨가된 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$ sol-gel 용액을 제작하였다. BNT 박막은 $Pt/TiO_2/SiO_2/Si$ 기판 위에 스핀 코팅 방법을 이용하여 증착하였으며, 최종 증착된 박막의 조성은 Rutherford backscattering spectroscopy 분석을 이용하여 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$임을 확인하였다. 200 nm 두께의 BNT 박막은 XRD 분석을 통해 (117)방향에서 강한 피크가 나오며, (001) 방향에서 Nd 치환에 따른 효과로 억제된 피크가 나오는 것을 확인하였다. Pt/BNT/Pt 구조를 이용하여 잔류분극을 측정한 결과 7 V에서 $48\;{\mu}\;C/cm^2$ 이 나왔다. 이것은 다른 강유전체 물질인 PZT, SBT, BLT보다 월등히 큰 값이다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.