• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.409-415
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• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.317-323
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• 1999

Si3N4-TiC composites have been known as electrically conductive ceramics. $Si_3N_4-TiC$ composites with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ were hot pressed in $N_2$ environment. The mechanical properties including hardness, fracture toughness, and flexural strength and tribological properties were investigated as a function of TiC content. $Si_3N_4-40$ vol% TiC composite was hot pressed at $1,750^{\circ}C$, $1,800^{\circ}C$, and $1,850^{\circ}C$ for 1, 3 and 5 hours in $N_2$ gas. Mechanical and tribolgical properties depended on microstructures, which were controlled by hte TiC content, hot press temperature, and hot press holding time. However, mechanical properties and tribological behaviors were degraded by the chemical reaction between TiC and N. The chemically reacted products such as TiCN, SiC, and $SiO_2$ were detered by the X-ray diffraction analysis.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.63-63
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.1-237.1
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• 2013

Ti 와 Al 은 금속간의 화합물이 내산화성에 우수한 성질을 가지고 있으며 낮은 밀도와 고온에도 큰 변화가 없는 성질을 가지고 있다. 그리하여 내식 및 부식 관련 연구나 고온재료를 필요로 하는 우주, 엔진 제품 등에 많은 연구가 진행되고 있다. 또한 Ti-Al-N 박막은 경도가 우수하여 고속 공구 부품에 널리 사용되고 있으며 최근 Ti-Al-N 에 Si 첨가로 인하여 40 GPa 이상의 고경도와 1,000도 이상의 산화온도를 지닌 나노 혼합물 코팅을 형성 시키는 것으로 알려져 있다. 본 연구에서는 Ti, Al, Si 원분말을 PBM (Planetary Ball Milling) 방법을 사용하여 Ti-Al-Si 혼합분말로 제조하고, 제조된 분말들은 SPS (Spark Plasma Sintering) 공정을 통하여 Ti-Al-Si 합금타겟을 제작하였다. 제작된 Ti-Al-Si 합급타겟을 사용한 Sputtering 공정을 수행하여 Ti-Al-Si 3원계 박막을 증착하였다. 그 결과 기존 Ti (82 ${\mu}m$), Al (32 ${\mu}m$), Si (16 ${\mu}m$) 크기의 원분말들이 PBM (Planetary Ball Milling) 공정 후 Ti-Al-Si (18 ${\mu}m$) 로 입도가 작아진 것을 확인 할 수 있었고, 소결 후 타겟이 99% 이상의 높은 밀도를 가졌으며 원분말의 조성과 동일한 조성을 가진 타겟이 제작되었음을 확인하였다. Ti-Al-Si 타겟의 경도는 약 1,000 Hv 이상의 값을 보였으며, Ti-Al-Si-N 박막의 경우 타겟의 조성과 동일하였고 경도는 약 35 GPa 로 높은 경도 값을 가지는 것을 확인하였다. 내산화 테스트 결과 Ti-Al-Si-N 박막은 1,000도 에서도 박막의 손상이 가지 않았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.

• Journal of Surface Science and Engineering
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• v.36 no.2
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• pp.116-121
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• 2003

Ti-Si-N coating layers were deposited onto WC-Co substrates by a hybrid system of arc ion plating (AIP) and sputtering techniques. The tribological behaviors of Ti-Si-N coating layers with various Si contents were investigated by the dry sliding wear experiments, which were conducted at three different sliding speeds, 0.1, 0.3, 0.5 m/s, against the steel and alumina balls. In the case of steel ball, the average friction coefficient slightly decreased with increasing the sliding speed regardless of Si content due to adhesive wear behavior between coating layer and steel ball. At constant sliding speed, the average friction coefficient decreased with increase of Si content. On the contrary, in the case of alumina ball, the average friction coefficient increased with increasing the sliding speed regardless of Si content, indicating that the abrasive wear behavior was more dominant when the coating layers slide against alumina ball. Through these experimental results, it was found that the tribological behaviors of Ti-Si-N coating layers were effected by factors such as Si content, sliding speed, and kinds of counterpart materials rather than the hardness of coating layer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.318-322
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• 2005

Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.