References
- J.Am.Ceram.Soc. v.47 Resistivity Anomaly in Doped Barium Titanate W.Heywang
- J.Am.Ceram.Soc. v.64 no.11 Influence of Stoichometry on the PTCR Effect in Prous Barium Titanate M.Kuwabara
- Philps. Res. Repts. v.31 Part.Ⅴ. New Aspects of an Improved PTC Model J.Daniels;R.Wernicke
- J.Am.Ceram.Soc. v.64 no.11 Effect of Microstructure on the PTCR Effect in Prouse Barium titanate Ceramics M.Kuwabara
- J.Am.Ceram.Soc. v.44 Semiconducting Bodies in the Family of Barium Titanate O.Saburi
- J.Am.Ceram.Soc. v.48 no.2 Factors and Mechanisms Affecting the Positive Temperature Coefficient of Resistivity of Barium Titanate J.B.MacChesney;J.F.Potter
- PTC Effect and Elementary Distribution Near the Grain Boundary in BaTiO₃Semiconductior v.97 no.10 H.Kondoh;J.Tanaka;H.Haneda;S.Shirasaki
- J.Jap.Ceram.Soc. v.97 no.10 Influence of the Addition of BN and Bi₂O₃on the Microstructure and the PTCR Effect in High-Curie-Point Barium-Lead Titanate Ceramic Y.Kato;M.Takeo;R.Liang;M.Kuwabara
- J.Appl.Phys. v.66 no.1 Effect of Sintering on of Sintering on the Electrical Properties of Postive Temperature Coefficient of Resistivity BaTiO₃Ceramics Hsiu-Fung Cheng
- Ceramic Bulletin v.47 no.2 Semiconducting BaTiO₃with Addition of Al₂O₃, SiO₂and TiO₂ Y.Matsuo;M.Fujimura;H.Sasaki;K.Nagase;S.Hayakawa
- Proc.British Ceram.Soc. v.18 The Effect of Silica Addition on the Semiconducting Properties of Doped Barium Titanate C.Eastman;C.A.Elyard;D.Warren
- J.Am.Ceram.Soc. v.54 no.9 Exaggerated Grain Growth in Liquid Phase Sintering of BaTiO₃ Y.Matsuo;H.Sasaki
- J.Inst.Electron.Commun.Eng.Japan v.55-C no.3 Formation of BaTiO₃Ceramic Semiconducting Layer by Diffusion T.Fukami
- J.Inst.Electron.Commun.Eng.Japan v.57-C no.8 BaTiO₃Ceramic Semiconductors by Liquid Phase Sintering T.Fukami
- J.Am.Ceram.Soc. v.59 no.11-12 Sintering Process of Semicoductive BaTiO₃Ceramics Y.Yoneda;H.Kato;H.Sasaki
- Japan.J.Appl.Phys. v.18 no.4 Dependence of Resistivity on Donor Dopant Cotent in Barium Titante Ceramics Y.Fukami;H.Tsuchiya
- Ceramic Bullentin v.62 no.2 Electrical Properties of Semiconducting BaTiO₃by Liquid-Phase Sintering W.Y.Howng;C.McCutcheon
- Yogyo-Kyokai-shi v.93 no.5 Sintering of Semiconducting BaTiO₃Doped with Si₃N₄ N.Yamamoto;O.Kamigaito
- Korean J.Mat.Rer. v.3 no.5 The role of grain boundary modifier in BaTiO₃system for PTCR device Joon-Hyung Lee;Sang-Hee Cho
- Japan.J.Appl.Phys. v.5 no.4 The Effects of Additives and of Ambient Atmosphere during Heating on the Electrical Resistivity of Semiconducting BaTiO₃ T.Ashida;H.Toyoda
- J.Phys.Soc.Japan v.20 Oxidation Phenomena in Semiconducting BaTiO₃ I.Ueda;S.Ikegami
- J.Ceram.Soc.Japan v.80 no.8 Hot-Pressing of Si₃N₄-Al₂O₃ Y.Oyama;O.Kamigaito
- セラミツクス基礎講座 1. セラミツクス 實驗 v.1 東京工業大學 工學部 無材料工學料(著)
- M.S.Thesis,Korea Advanced Institute of Science and Technology Impedeance analses of cooling rate effects on the electrical propertis of the PTCR materals Chang-Jung Kim
- J.Kor.Ceram.Soc. v.31 no.2 Effect of Sb₂O₃Addition on the Microstructure and the PTCR Characteristic in BaTiO₃Ceramics J.S.Kim;B.H.Lee;K.H.Lee
- J.Am.Ceram.Soc. v.38 no.11 BaTiO₃-SiO₂Phase diagram D.E.Rose;R.Roy
-
J.Res.N.B.S-A
v.74.A
no.2
Systhesis and Growth of Fresnoite
$(Ba_2TiSi_2O_8)$ from a TiO₂Flux and its Relation to the System BaTiO₃-SiO₂ C.R.Robbins - Glastechn.Ber. v.49 no.9 On the System BaO-TiO₂SiO₂ N.Koppen;A.Dietzel
- エしクトロニ·セラミクス v.10 no.4 化學的立場からみだPTCサミスタ 上岡久芳
- Ph.D. Thesis, Korea Advanced Institute of Science and Technology The mechanism of the formatin of potential barrier in n-doped BaTiO₃ceramics Hong-Soo Kim