High-temperature Oxidation of the TiAlCrSiN Film

TiAlCrSiN 박막의 고온 산화 부식

  • 이동복 (성균관대학교 신소재공학과) ;
  • 김민정 (성균관대학교 신소재공학과) ;
  • ;
  • ;
  • Published : 2016.11.17

Abstract

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

Keywords