• Journal of the Korean Society for Heat Treatment
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• v.8 no.1
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• pp.32-43
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• 1995

Ti-6Al-4V alloy are widely used in chemical and aircraft industries for their good corrosion resistance and high strength to weight ratio. Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN surface-alloyed layer with high hardness on the substrate very simplely by injecting reaction gas($N_2$) into a laser-generated melt pool and adjust the hardness to the specific requirements of the individual application by changing of laser processing parameters. This research has been investigated the effect of such parameters on TiN surface-alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum hardness of TiN surface-alloyed zone waw obtained by injecting 100% $N_2$ gas and it was decreased as the amount of $N_2$ gas in Ar and $N_2$ gas mixture was decreased. As scanning speed was increased, the hardness and depth of TiN surface-alloyed zone was decreased at constant laser power. The surface hardness after double scanning laser treatment is higher than that of single scanning. At constant laser power, the surface roughness is increased after the surface alloying if laser scanning speed is decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.169-169
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• 2000

최근 반도체 소자의 초고집적화 현상에 따라 기존의 Al-base 합금에 대한 한계에 달하면서 그에 대한 대체 물질로 Cu가 관심을 모으게 되었고 그럼으로써 Cu metallization을 위한 많은 연구가 진행되어 왔다. Cu는 Al-base 합금계보다 비저항이 낮고, 녹는점이 높으며, 또한 electromigration 특성이 뛰어난 것으로 알려져 있다. 공학적인 면에서 이미 이들 계에 대한 adhesion 및 전기적 특성에 대한 많은 연구가 있어왔지만, 이들 특성 변화에 대한 물리적 의미를 제공할 만한 기초 자료들이 부족한 상태이다. 본 연구에서는 부도체인 polyimide 박막과 diffusion barrier인 TiN 박막위에서의 Cu 박막성장에 따르는 interface chemical reaction의 변화를 XPS를 이용하여 관찰함으로서 이들 계에 있어서의 adhesion과의 관계를 조사하였다. 그리고 XPS를 이용한 modified surface accumulation method를 적용시켜 TiN diffusion barrier를 통한 Cu의 grain boundary diffusion 상수들을 측정하였다. Cu/TiN system의 경우에는 interface chemical reaction이 일어나지 않았지만 Cu/polymide system에 있어서는 boundary diffusivity는 특히 40$0^{\circ}C$에서 $650^{\circ}C$ 영역에서, Db=60$\times$10-11exp[-0.29/(kBT)]cm2/sec 이었다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.308-313
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• 2006

The effect of coating time on surface properties of the TiN-coated high speed steel(SKH51) by arc ion plating is and presented in this paper. Surface roughness, micro-hardness, coated thickness, atomic distribution of TiN and adhesion strength are measured for various coating times. It has been shown that the coating time has a deep influence more than 60 minites on the micro-hardness, coated thickness, atomic distribution of Ti and adhesion strength of the SKH51 steels, but that the coating time has little influence on the surface roughness.

• Journal of Surface Science and Engineering
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• v.34 no.2
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• pp.97-104
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• 2001

($Ti_{ 1-x}$$Al_{ x}$)N has been deposited on high speed steel (HSS) substrate using PECVD from the gas mixture of $TiC1_4$, $AlC1_4$, $NH_3$, $H_2$, and Ar. The correlation between the microstructure and the mechanical properties was investigated. ($Ti_{1-x}$$Al_{ x}$)N showed single phase NaCl-structure up to X=0.87, while a mixed phase of NaCl Type (Ti, Al) N and wurtzite structure AlN was observed for 0.87$Ti_{1-x}$ $Al_{x}$ )N became by degrees as increasing X, which made the hardness of the coating higher by Al addition. When the coating was composed of a mixed phase, however, the hardness decreased abruptly due to the effect of soft AlN phase. The wear volume of the coatings could be obtained as the concentration of the coating was varied, and the relation between the wear volume and hardness or the adhesion strength was discussed.

• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.79-84
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• 2003

$WC-Ti_{1}$ -xA $l_{x}$ N multilayered coatings are performed by their periodically repeated structures of lamellae of WC-Ti/$WC-Ti_{1}$ -xA $l_{x}$ Nmaterials. The $WC-Ti_{1}$ -xA $l_{x}$ N coatings with variable Al content were deposited onto AISI D2 steel by cathodic arc deposition (CAD) method. The electrochemical behavior of multilayered $WC-Ti_{1}$ -xA $l_{x}$ N coatings with different phases (WC- Ti$0.6/Al_{0.4}$ N, $WC-Ti_{0.53}$$Al_{0.47}$N, $WC-Ti_{0.5}$ $Al_{0.5}$ N and $WC-Ti_{ 0.43}$$Al_{0.57}$ N) was investigated in deaerated 3.5% NaCl solution at room temperature. The corrosion behaviors for the multilayered coatings were investigated by electrochemical techniques (potentiodynamic polarization) and surface analyses (X-ray diffraction (XRD), scanning electron microscopy (SEM), and glow discharge optical emission spectroscopy (GDOES)). In the petentiodynamic polarization test, the corrosion current density of $WC-Ti_{0.5}$$Al_{0.5}$N was lower than others.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.11
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• pp.1019-1024
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• 2009

Visible-light-active $TiO_2-_xN_x$ nanoparticles with a homogeneous anatase crystalline structure were successfully prepared through a hydrolysis of $TiCl_4$ with ammonia solution. The samples were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), $N_2$-sorption, and UV-vis diffuse reflectance spectra (DRS) techniques. The light absorption onset shifted from 390 nm on pure $TiO_2$ to the visible region at 530 nm on nitrogen-doped $TiO_2$. A clear decrease in the band gap was deduced from the DRS results. The photocatalytic activity was evaluated from the photodegradation of congo red solution under visible light irradiation. The photocatalyst showed the highest photocatalytic activity at an optimal value of nitrogen doping concentration. This was suggested that the nitrogen doping should have an important effects on the improvement of photocatalytic activity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.209-209
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• 2003

기계가공용으로 개발된 3성분계 Ti-Si-N 코팅막은 약 40㎬이상의 초고경도이며, 그 미세구조는 나노입자의 TiN결정과 비정질 Si$_3$N$_4$로 이루어져 있다. Ti-Si-N 코팅의 경도는 극소량 Si를 첨가함에 따라 급격히 증가하였으며, 7.7at%에서 약 45㎬이었다. 그 이상에서는 감소하였다. 본 연구는 Ti-Si-N 코팅에서 규소첨가에 따른 박막에 형성하는 질화규소 또는 규소의 특성을 조사하기 위하여 질화규소 박막을 제조하여 그 특성 및 기계적 성질을 조사하였다. 스퍼터링 방법으로 제조한 질화규소 박막의 표면 및 내부구조를 광학현미경, 주사전자현미경, 투과전자현미경 그리고 AFM으로, 정성 및 정량을 EPMA와 EDS로, 결정성을 박막 엑스선회 절분석기로, 화학 결합구조을 XPS으로 분석하였다. 그리고 나노인덴터를 이용하여 박막의 경도와 탄성계수를 조사하였다.

• Journal of Surface Science and Engineering
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• v.40 no.1
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• pp.1-5
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• 2007

Quaternary TiZrAlN nanocomposite thin films were synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS), and their microstructure and mechanical characteristics were examined. The grain refinement of the TiZrAlN nanocomposite thin films was controlled by adjusting the $N_2$ partial pressure. The hardness of the film varied with the $N_2$ partial pressure and the maximum value was obtained approximately 47 GPa. It was also confirmed that there is a critical value of the grain size($d_c$) to need maximum hardness.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.718-723
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• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.1-9
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• 2003

In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.