• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.3 s.174
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• pp.761-768
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• 2000

In order to investigate how the fatigue damage effects on the critical properties of superconductor, a fatigue test at room temperature and an Ic measurement test at 4.2K were carried out in this study, respectively, using a 9 strand Cu-Ni/NbTi/Cu composite cable. Through the fatigue test of a 9 strand Cu-NUNbTi/Cu composite cable, a conventional S-N curve was plotted even though there was a possibility of fretting among strands. It was found that the maximum stress corresponding to the inflection point on the S-N curve obtained was nearly the same value as the yielding strength of cable obtained from the static tensile test. However, the effect of cabling in multi-strands superconducting cable on the fatigue strength was not noticeable. The critical current(Ic) measurement was carried out at 4.2K in a NbTi strand out of the fatigued cable. It showed a degradation of lc at high stress amplitude regions over 380NTa, and the degradation became significant as the applied stress amplitude increased.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.88-93
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• 2005

Ti-AI-Si-N coating layers were deposited on WC-Co substrates by a hybrid system of arc ion plating and sputtering techniques. The coatings were prepared with different Si contents to investigate the effect of Si content on their mechanical properties and microstructures. The dry sliding wear experiments were conducted on Ti-AI-Si-N coated WC-Co discs at constant load, 3N, and sliding speed, 0.1 m/s with two different counterpart materials such as steel ball and zirconia ball using a conventional ball-on-disc sliding wear apparatus. In the case of steel ball, the friction coefficient of Ti-AI-Si-N coating layers became lower than that of Ti-AI­N coating layers. The friction coefficient decreased with increasing of Si content due to adhesive wear behavior between coating layer and steel ball. On the contrary, in the case of zirconia ball, the friction coefficient increased with increasing of Si content, indicating that abrasive wear behavior was more dominant when the coating layers slid against zirconia ball.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.517-524
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• 1992

In this study, 0.10Pb(SbS11/2TSnS11/2T)OS13T-(0.90-x)PbZrOS13T (0.25 x 0.40) ceramics were fabricated by the atmospheric method. The sintering temperature and time were 1250[$^{\circ}C$] and 2[2hr], respectively. The structureal, dielectric and piezoelectric properties with composition of PbTiOS13T were studied. As the results of XRD ans SEM, the crystal structure of a specimen was rhombohedral, lattice constant and average grain size were decreased with increasing the contents of PbTiOS13T. Relative dielectric constant and Curie temperature were increased with increasing the contents of PbTiOS13T, 0.10PSS-0.40PT-0.50PZ specimen had the highest values of 904 and 265[$^{\circ}C$], respectively. In increasing of PbTiOS13T contents form 25[mol%] to 40[mol%], piezoelectric charge constant and electromechanical coupling factors were increased form 114[pC/N] to 142[pC/N], 17[%] to 24[%] and mechanical quality factor were decreased with increasing the contents of PbTiOS13T. In the 0.10PSS-0.40PT-0.50PZ specimens, those values were 14.2[kV/cm] and 9.43[x10S0-6TC/cmS02T], resectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.161-161
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• 2012

질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$와 $NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.

• Journal of Korean Ophthalmic Optics Society
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• v.14 no.1
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• pp.63-68
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• 2009

Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The effect of oxygen incorporation in the fabrication of deposited films was investigated. Methods: The cross sections of deposited films on Silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS survey spectra, the compositional depth-profile of deposited films was examined by an XPS apparatus. Results: From the data of XPS depth profile of films, it could be seen that the element O as well as the elements Ti and N present in the surface of the film and the relative percentage of the element O was constant at 65 at.% with respect to the depth of film. Conclusions: The color change with thickness of the films had something to do with the change of Ti $ 2p_{3/2}$ peak intensity and shape mixed of $ TiO_2$, TiN, $ TiO_{x}N_{y}$ compound.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.104-104
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• 2016

음극아크증착과 스퍼터링을 동시에 사용한 하이브리드 공정으로 제조된 TiAlSiN 코팅층의 물성을 평가하였다. TiAlSiN 코팅층은 음극아크 소스에 Ti-Al 타겟을 장착하고 스퍼터링 소스에는 Si 타겟을 장착하여 아르곤과 질소 가스의 혼합가스 분위기에서 스테인리스(SUS304)와 초경(cemented carbide; WC-15wt.%Co) 기판 위에 제조되었다. 음극아크 소스에 인가되는 전류는 고정하고 스퍼터링 소스에 인가되는 전력을 조절하여 TiAlSiN 코팅층의 Si 함량을 제어하였다. TiAlSiN 코팅층의 Si 함량이 증가하면 코팅층의 구조가 주상정에서 비정질 구조로 변화한다. 이는 Si 함량이 증가하면 코팅층에 형성되는 알갱이 구조의 크기가 줄어들기 때문이다. X-선 회절 결과와 Scherrer's equation을 이용하여 Si 함량에 따른 알갱이 구조의 크기를 계산하면 Si이 없는 코팅층은 약 14 nm의 크기를 보이며 8 at.% 이상의 함량에서 약 2.5 nm로 포화된다. TiAlSiN 코팅층의 경도를 Si 함량에 따라 측정하면 Si 함량이 증가하면 경도도 증가하는 경향을 보이며 약 9 at.%의 Si 함량에서 3200 Hv로 최대가 되고 이후에는 감소한다. TiAlSiN이 코팅된 스테인리스 시편을 대기에서 열처리하고 시편 무게증가를 측정하여 코팅층의 내열성을 평가하였다. Si 함량이 증가하면 내열성도 향상되는데 14.4 at.%의 Si 함량에서 $700^{\circ}C$까지 무게 증가가 없으며 $900^{\circ}C$까지 0.43 mg의 증가를 보인다. 본 실험을 통해서 얻어진 TiAlSiN 코팅층은 비교적 높은 경도와 내열성을 확보하여 절상공구 보호막 코팅 소재 등으로 활용이 가능할 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.321-322
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• 2006

The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33\;{\mu}C/cm^2$, $1.2{\times}10^{-6}\;A/cm^2$, and 5.3 ohm/contact, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.263-264
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• 2007

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.43-49
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• 2000

The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.718-722
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• 2011

In this work, we investigated to the etching characteristics of the TiN thin film in He/$BCl_3/Cl_2$ plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/$BCl_3/Cl_2$ plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/$BCl_3/Cl_2$ plasma. The new peak was revealed Ti-$Cl_x$ by Cl 2p peak of XPS wild scan spectra analysis.