• Korean Journal of Crystallography
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• v.10 no.1
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• pp.51-55
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• 1999

Cesium titanium(III) pyrophosphate 화합물인 CsTiP2O7을 합성하고 X절 회절법을 이용하여 그 결정구조를 해석하였다. 이물질은 단사정계의 P21/a 공간군으로 결정화되었고 a=8.369(2) , b=10.208(2) , c=7.752(1) , β=104.77(2)o, V=640.4(2) 3, and Z=4이다. 이 물질의 구조는 모서리를 공유하고 있는 TiO6 팔면체와 P2O7 pyrophosphate group들로 구성된 framework로 구성되어 있으며 그 결과로 형성된 tunnel 안에는 Cs+이온이 존재한다. CsTiP2O7은 ATiP2O7(A=K, Rb)와 KAIP2O7 그리고 AMoP2O7(A=K, Rb, Cs)등 다른 +3금속 pyrophosphate들로 유사한 구조를 가지고 있다. 이 물질은 [Cs+][Ti3+][P2O74-]의 식으로 표현할 수 있다.

• Applied Chemistry for Engineering
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• v.34 no.6
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• pp.584-589
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• 2023

The physicochemical properties of VOx/TiO₂ catalysts with different TiO₂ supports were analyzed, and SCR reactions were performed. VOx/TiO₂ catalysts were prepared by impregnation using anatase TiO₂, which was manufactured by Sigma Aldrich and prepared from TiOCl₂ and titanium isopropoxide (TTIP) as a precursor. They are denoted as VS, VC, and VP. The specific surface area of the VS was 1/10 or less of that of the VC and VP, and the dispersibility of vanadium oxide was relatively low. As a result of XPS analysis, the ratio of adsorbed oxygen was higher in VS and VP with Ti³⁺ than in VC. In VC and VP, vanadium mainly existed in V⁴⁺ and V³⁺ states in relation to the dispersibility of vanadium oxide. The amount of adsorbed oxygen contributed more to NH₃-SCR activity than vanadium oxide dispersibility below 250 ℃, while vanadium oxide dispersibility contributed more to activity beyond 300 ℃. The fast SCR activity in all three samples was the highest at NO₂/NOx = 0.5, followed by VS < VC < VP samples. It was determined that the dispersibility of vanadium oxide had a significant effect on fast NH₃-SCR activity.

• Applied Microscopy
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• v.29 no.4
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• pp.471-477
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• 1999

Microstructural observations on the pyrochlore-type $Lu_2Ti_2O_7$ and the similar type of compounds, $In_2(Ti_{1.7}Zn_{0.3})O_{6.7}$ and $In_2(Ti_{1.7}Mg_{0.3})O_{6.7}$ which were made by the isothermal heat-treatment at 1623K for 18 days in Pt tube, were carried out using a top-entry HRTEM working at 200 kV. The modulated structures were found in both compounds, however, not in $Lu_2Ti_2O_7$. From the electron diffraction pattern analysis, the modulated superlattices are incommensurate and are 2.69 times of sublattices along (220) direction. The high resolution TEM images have shown that the superlattices consist of alternate superlattices which are composed of two or three sublattices, resulting in the average of 2.7 times of sublattices in accordance with the analysis of electron diffraction patterns. The crystal structures of both compounds are found to quite similar to those of pyrochlore, however the evidence that the cubic axes are slightly deviated from right angle. The modulated structure has gradually changed to the unmodulated structure induced by electron irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.525-531
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• 1996

(Ti1-xAlx)N films were deposited on high speed steel and silicon substrates by reactive sputtering in mixed $Ar-N_2$ discharges. Crystalline phases and microhardness of ($Ti_1_xAl_x$)N films were investigated with variation of the film composition and substrate RF bias voltage. With Al content x of about 0.6, crystalline phase of ( $Ti_1_xAl_x$N films was changed from single-phase NaCl structure to two phase mixture of NaCl and wurtzite structures: Microhardness of ($Ti_1_xAl_x$)N films was largely improved by applying RF bias voltage above 50 V during deposition. Hardness of ($Ti_1_xAl_x$)N films reached a maximum value for Al content x of about 0.4, and 1900 kg/$mm^2$ was obtained for 1$\mu m$-thick ($Ti_{0.6}Al_{0.4}$)N films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of Technologic Dentistry
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• v.23 no.2
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• pp.223-230
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• 2002

Pure titanium and Ti6Al4V alloy have been mainly used as implant materials but the cytotoxicity of V, neurotoxicity of Al resulting in Alzheimer disease had been reported. This paper was described the influence of composition of Ti-Nb alloys with 3 wt%Nb, 20 wt%Nb on the microstructure and corrosion resistance. Specimens of Ti alloys were melted in vacuum arc furnace and homogenized at $1000^{\circ}C$ for 24hr. The alloys were rolled in $\beta$ and ${\alpha}+{\beta}$ regions. The corrosion resistance of Ti alloys were evaluated by potentiodymic polarization test in 0.9% NaCl and 5% HCl solutions. The results can be summarized as follows: 1. The microstructure was transformed from $\alpha$ phase to ${\alpha}+{\beta}$ phase by adding Nb 2. The hardness of Ti-20Nb alloy was greater than Cp- Ti, Ti-3Nb alloy. 3. The corrosion resistance of Ti-20Nb alloy was better than that of Cp-Ti, Ti-3Nb alloy in 0.9%NaCl and 5%HCl solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.157-157
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• 2017

Titanium and its alloys that have a good biocompatibility, corrosion resistance, and mechanical properties such as hardness and wear resistance are widely used in dental and orthopedic implant applications. They can directly connect to bone. However, they do not form a chemical bond with bone tissue. Plasma electrolytic oxidation (PEO) that combines the high voltage spark and electrochemical oxidation is a novel method to form ceramic coatings on light metals such as titanium and its alloys. This is an excellent reproducibility and economical, because the size and shape control of the nano-structure is relatively easy. Silicon (Si), manganese (Mn), and magnesium (Mg) has a useful to bone. Particularly, Si has been found to be essential for normal bone, cartilage growth and development. Manganese influences regulation of bone remodeling because its low content in body is connected with the rise of the concentration of calcium, phosphates and phosphatase out of cells. Insufficience of Mn in human body is probably contributing cause of osteoporosis. Pre-studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The objective of this work was to study nucleation and growth of bone-like apatite formation on Ti-6Al-4V in solution containing Mn, Mg, and Si ions after plasma electrolytic oxidation. Anodized alloys was prepared at 270V~300V voltages. And bone-like apatite formation was carried out in SBF solution for 1, 3, 5, and 7 days. The morphologies of PEO-treated Ti-6Al-4V alloy in containing Mn, Mg, and Si ions were examined by FE-SEM, EDS, and XRD.