• Journal of the Korean Society for Heat Treatment
• /
• v.13 no.5
• /
• pp.324-329
• /
• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• Journal of the Korean Society for Heat Treatment
• /
• v.4 no.1
• /
• pp.19-29
• /
• 1991

This study was to investigate the influence of the substrate hardness on the hardness and adhesion of TiN thin film deposited by R.F. PACVD. Although the substrate hardness changed, chemical composition, stoichiometry and structure of TiN thin film did not change. ISE index was 1.96-1.99 for the substrate and was 1.57-1.79 for TiN thin film. And ISE index of TiN thin film was inverse proportion to the substrate hardness. When the substrate hardness was low, TiN thin film had many cracks around the indentation. But as the substrate hardness increased, TiN thin film had a few cracks and the deformation was limited within indentation. In having measured the adhesion of TiN thin film by SAT, the critical load (Lc) generally increased as the substrate hardness decreased.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.2
• /
• pp.93-96
• /
• 2017

The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

• Polymer(Korea)
• /
• v.38 no.4
• /
• pp.525-529
• /
• 2014

PEDOT-$TiO_2$ hybrid conductive thin film including semiconductive metal oxide was successfully prepared via simultaneous vapor phase polymerization (VPP). The mechanical properties such as pencil hardness and anti-scratch property as well as optoelectrical properties of PEDOT-$TiO_2$ hybrid thin film could be improved as compared with pristine PEDOT thin film. Physicochemically stable crosslinked $TiO_2$ layer derived from a sol-gel process by FTS was generated in the PEDOT thin film layer by simultaneous VPP, resulting in improving mechanical properties of the hybrid thin films without any deterioration of their original optoelectrical properties. PEDOT-$TiO_2$ hybrid thin film showed better electrical conductivity as compared with PEDOT film. It might be due to the fact that the surface morphology of hybrid thin film prepared by simultaneous VPP showed smoother than that of pristine PEDOT thin film.

• Journal of Environmental Science International
• /
• v.16 no.6
• /
• pp.683-688
• /
• 2007

In this study, N doped $TiO_2$ (TiO-N) thin film was prepared by DC magnetron sputtering method to show the photocatalytic activity in a visible range. Various gases (Ar, $O_2\;and\;N_2$) were used and Ti target was impressed by 1.2 kW -5.8 kW power range. The hysteresis of TiO-N thin film as a function of discharge voltage wasn't observed in 1.2 and 2.9kW of applied power. Cross sections and surfaces of thin films by FE-SEM were tiny and dense particle sizes of both films with normal cylindrical structures. XRD pattern of $TiO_2$ and TiO-N thin films was appeared by only anatase peak. Red shift in UV-Vis adsorption spectra was investigated TiO-N thin film. Photoactivity was evaluated by removal rate measurement of suncion yellow among reactive dyes. The photodegradation rate of $TiO_2$ thin film on visible radiation was shown little efficiency but TiO-N was about 18%.

• Journal of IKEEE
• /
• v.25 no.1
• /
• pp.69-75
• /
• 2021

In this work, we consider the fabrication method and electrical characteristics of dye-sensitized solar cells (DSSCs), which use titanium (Ti) metal thin films to replace expensive fluorine tin oxide (FTO) electrodes. The thickness of the Ti thin film was changed by adjusting the deposition time of the Ti, and the surface resistance decreased as the thickness of the Ti thin film became thicker. The thickness of the Ti thin film was shown to be similar to the surface resistance of the FTO thin film at approximately 190nm and the DSSC with a thickness of approximately 250nm showed the highest energy conversion efficiency of 4.24%. Furthermore, the possibility of commercialization was confirmed by fabricating and evaluating the DSSC module.

• Electrical & Electronic Materials
• /
• v.8 no.1
• /
• pp.13-20
• /
• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.11
• /
• pp.3991-3995
• /
• 2011

$TiO_2-SiO_2-In_2O_3$ nanocomposite thin film was deposited on the glass substrates using a dip coating technique. The morphology, surface composition, surface hydroxyl groups, photocatalytic activity and hydrophilic properties of the thin film were investigated by AFM, XPS, methyl orange decoloring rate and water contact angle measurements. The hydroxyl content for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ nanocomposite films was calculated to be 11.6, 17.1 and 20.7%, respectively. $TiO_2-SiO_2-In_2O_3$ film turned superhydrophilic after 180-min irradiation with respect to pure $TiO_2$ and $TiO_2-SiO_2$ thin films. The photocatalytic decomposition of methyl orange for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ thin films was measured as 38.19, 58.71 and 68.02%, respectively. The results indicated that $SiO_2$ and $In_2O_3$ had a significant effect on the hydrophilic, photocatalytic and self-cleaning properties of $TiO_2$ thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.10
• /
• pp.826-832
• /
• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Journal of the Korean Ceramic Society
• /
• v.31 no.7
• /
• pp.795-803
• /
• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.