• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.308-313
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• 2006

The effect of coating time on surface properties of the TiN-coated high speed steel(SKH51) by arc ion plating is and presented in this paper. Surface roughness, micro-hardness, coated thickness, atomic distribution of TiN and adhesion strength are measured for various coating times. It has been shown that the coating time has a deep influence more than 60 minites on the micro-hardness, coated thickness, atomic distribution of Ti and adhesion strength of the SKH51 steels, but that the coating time has little influence on the surface roughness.

• 한국정밀공학회지
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• 제25권7호
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• pp.124-130
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• 2008

The effect of nitrogen gas pressure in arc ion plating on surface properties of the TiN-coated high speed steel(SKH51) is presented in this paper. The surface roughness, micro-particle, micro-hardness, coated thickness, atomic distribution of TiN, and adhesion strength are measured fur various nitrogen gas pressures. It has been shown that the nitrogen gas pressure has a considerable effect on the surface roughness, adhesion strength, atomic distribution of TiN, and surface deposition of TiN of the high speed steels but that it has little influence on the micro-hardness and coated thickness.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1422-1424
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• 2009

Modified self-assembled $TiO_2$ and polyelectrolyte multilayer film have been used as OTFT insulator. Both films were used as gate insulator and their thickness were reduced to the order of 10nm. The operating voltage of OTFT was substantially reduced due to nanoscale thickness of titanium oxide and polyelectrolyte multilayer. Pentacene-based OTFT characteristics will be discussed.

• 한국분말재료학회지
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• 제17권3호
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• pp.216-222
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• 2010

Self-standing $TiO_2$ nanotube arrays were fabricated by potentiostatic anodic oxidation method using pure Ti foil as a working electrode and ethylene glycol solution as electrolytes with small addition of $NH_4F$ and $H_2O$. The influences of anodization temperature and time on the morphology and formation of $TiO_2$ nanotube arrays were investigated. The fabricated $TiO_2$ nanotube arrays were applied as a photoelectrode to dye-sensitized solar cells. Regardless of anodizing temperature and time, the average diameter and wall thickness of $TiO_2$ nanotube show a similar value, whereas the thickness show a different trend with reaction temperature. The thickness of $TiO_2$ nanotube arrays anodized at $20^{\circ}C$ and $30^{\circ}C$ was time-dependent, but on the other hand its at $10^{\circ}C$ are independent of anodization time. The conversion efficiency is low, which is due to a morphology breaking of the $TiO_2$ nanotube arrays in manufacturing process of photoelectrode.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.746-752
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• 2014

Photo electrode is an important component of DSSC, so this paper did some research on it. Through the method of adding PEG additive into $TiO_2$ paste, the electrical characteristics and efficiencies of DSSCs with photo electrode surface area were studied. In the case of not adding PEG in $TiO_2$ paste, $26{\mu}m$ thickness $TiO_2$ photo electrode shows 5.081% efficiency. The highest short circuit current density was $10.476mA/cm2^$. The structure of porous $TiO_2$ film can be controlled through changing the PEG additive amount in $TiO_2$ paste and the molecular weight of PEG. When the additive amount of PEG 20,000 in $TiO_2$ paste reaches 5%, the peak efficiency with $26{\mu}m$ thickness $TiO_2$ photo electrode was 5.387% and its highest current density were $11.084mA/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.684-688
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• 2001

The structural, piezoelectric and dynamic range characteristics of modified PbTi $O_3$ceramics were investigated as a function of Mn $O_2$addition. With the increase of Mn $O_2$addition, Curie temperature was decreased. As the increase of Mn $O_2$addition, mechanical quality factor ( $Q_{mt3}$) in the third over tone thickness mode was increased. Dynamic range in the third over tone thickness mode was also increased with the increase of Mn $O_2$addition. The composition ceramics added to 0.075wt% Mn $O_2$showed the best properties for SMD type resonator using third over tone thickness vibration in terms of high Curie temperature more than 31$0^{\circ}C$ and dynamic range of 49.38dB.B.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.313-316
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• 2003

The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

• 태양에너지
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• 제9권1호
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• pp.14-21
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• 1989

Preparation of $TiO_2$ Film by the Dip-coating Method and its Application to photo-electrochemical Electrodes. $TiO_2$ film of n-type semiconductor has been of great interest as a material for solar energy conversion. For its practical application, the dip-coating method has been applied to prepare $TiO_2$ (anatase) film on the nesa glass substrate. Films up to about $1.8{\mu}m$ in thickness can be obtained by repeating the operation, dipping $\to$ pulling up $\to$ drying $\to$ heating at $500^{\circ}C$ for 10 minute. Heating temperature at $500^{\circ}C$ was adopted to convert $TiO_2$ gels into $TiO_2$ crystalline films. The $TiO_2$ films showed the maximum photocurrent ($14mA/cm^2$) at the film thickness of about $1.8{\mu}m$. It was also found that the additional heating at $500^{\circ}C$ for about 20 minutes improved remarkably the photo current of the $TiO_2$ films.

• Journal of Welding and Joining
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• 제20권6호
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• pp.106-106
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and Ti₃Ag and titanium oxide, TiO₂were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of 900℃ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about 30㎛, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.