• Title/Summary/Keyword: Ti thickness

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Preparation of $\textrm{BaTiO}_3$ Thin Films by Electrochemical Method (전기화학법을 이용한 $\textrm{BaTiO}_3$박막의 제조)

  • Gong, Pil-Gu;Yoo, Young-Sung;Lee, Jong-Kook;Kim, Hwan;Park, Soon-Ja
    • Korean Journal of Materials Research
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    • v.7 no.2
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    • pp.114-120
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    • 1997
  • Perovskite $BaTiO_3$ thin films on stainless steel substrate were prepared by using electrochemical reduction method in solution of $TiCl_4\;and\;Ba(N0_3)_2$. According to current density and electrolysis time. the morphology and thickness of film were varied. Ra/'Ti atomic ratio in $BaTiO_3$ film was controlled by Ha/Ti atomic ratio in solution. Although the excess $TiO_2{\cdot}nH_2O$ film was coated in initial stage of electrolysis. UiilTi atomic ratio in film was nearly constant in later stage. $BaTiO_3$ film precursor was obtained under the condition of $1OmA/cm^2$ current density and Smin electrolysis time. $BaTiO_2$ thin films with perovskite phase were formed 11,. the heat treatment above $500^{\circ}$.

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Studies on Photocatalytic Thin Films($TiO_2$, TiO-N) Manufactured by DC Magnetron Sputtering Method and it's Characteristics for Removal of Pollutants (DC 마그네트론 스퍼터링법을 이용한 광촉매박막($TiO_2$, TiO-N)제조 및 오염물질 제거에 관한 연구)

  • Jeong, Weon-Sang;Park, Sang-Weon
    • Journal of Korean Society of Environmental Engineers
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    • v.27 no.1
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    • pp.59-66
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    • 2005
  • [ $TiO_2$ ] was deposited by DC magnetron sputtering on glass surface under various sputtering parameters such as discharge power($0.6{\sim}5.2\;kW$, substrate temperature($R.T{\sim}350^{\circ}C$), Ar and $O_2$ flow ratio with $0{\sim}50\;sccm$($Ar+O_2$ 90 sccm) and about 1 mtorr of pressure. TiO-N thin film was prepared under same sputtering conditions for $TiO_2$ thin film except flow ratio($Ar+O_2+N_2$ 90 sccm). The sheet resistance of thin films deposited under these parameters was measured to analyze electronic characteristic and thin film's thickness(${\alpha}$-step), surface roughness(AFM) and formation construction(FE-SEM, XRD) were also measured to draw optimal sputtering parameters. In order to evaluate photo-activity of thin film($TiO_2$, TiO-N) made in optimal parameters for removal of pollutants, toluene among VOCs and Suncion Yellow among reactive dyes were chosen to probe organic compounds for photo-degradation. It was shown that the photo-catalytic thin films had a significant photo-activation for the chosen contaminants and especially TiO-N thin film showed maximum efficiency of 33% for toluene(5 ppm) removal in visible-light range.

Design and characterization of conductive transparent filter using [TiO2|Ti|Ag|TiO2] multilayer ([TiO2|Ti|Ag|TiO2] 다층구조를 이용한 전도성 투과필터의 설계 및 특성분석)

  • Lee, Seung-Hyu;Lee, Jang-Hoon;Hwangbo, Chang-Kwon
    • Korean Journal of Optics and Photonics
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    • v.13 no.4
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    • pp.363-369
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    • 2002
  • We have designed conductive transparent filters using a low-emissivity coating such as [dielectric|Ag|dielectric] for display applications. The design is the repetition of [$TiO_{2}$|Ti|Ag |$TiO_{2}$] to increase the transmittance in the visible and decrease the transmittance in the near IR. The conductive transparent filters are deposited by a radio frequency(RF) magnetron sputtering system. The optical, structural and electrical properties of the filters were investigated and the optical spectra are compared with simulated spectra. The thickness of the deposited Ag films is above 13 ㎚ to increase the conductivity and that of $TiO_{2}$ films is 24 ㎚ to increase the transmittance in the visible range. Ti blockers are employed to prevent the Ag films from being oxidized by an oxygen gas during the reactive sputtering process. Also, it is shown that the thicker Ti film is necessary as the period increases. Finally, a filter with repetition of the basic structure three times shows the better cut-off near infrared(NIR) and the sheet resistance as low as 2Ω/□ which is enough to shield an unnecessary electromagnetic waves for a display panel.

A.C. Impedance Properties of HA/Ti Compound Layer coated Ti-30Ta-(3~15)Nb Alloys (Ti-30Ta-(3~15)Nb 합금에 HA/Ti 복합 코팅한 표면의 교류임피던스 특성)

  • Jeong, Y.H.;Lee, H.J.;Moong, Y.P;Park, G.H.;Jang, S.H.;Son, M.K.;Choe, H.C.
    • Journal of Surface Science and Engineering
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    • v.41 no.5
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    • pp.181-188
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    • 2008
  • A.C. impedance properties of HA/Ti compound layer coated Ti-30Ta-($3{\sim}15$)Nb alloys have been studied by electrochemical method. Ti-30Ta binary alloys contained 3, 7, 10 and 15 wt% Nb were manufactured by the vacuum furnace system. And then specimen was homogenized at $1000^{\circ}C$ for 24 hrs. The sample was cut and polished for corrosion test and coating. It was coated with HA/Ti compound layer by magnetron sputter. The non-coated and coated morphology of Ti alloy were analyzed by X-ray diffractometer (XRD), energy X-ray dispersive spectroscopy (EDX) and filed emission scanning electron microscope (FE-SEM). The corrosion behaviors were investigated using A.C. impedance test (PARSTAT 2273, USA) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Ti-30Ta-($3{\sim}15\;wt%$)Nb alloys showed the ${\alpha}+{\beta}$ phase, and $\beta$ phase peak was predominantly appeared in the case of increasingly Nb contents. The microstructures of Ti alloy were transformed from needle-like structure to equiaxed structure as Nb content increased. From the analysis of coating surface, HA/Ti composite surface uniformed coating layer with 750 nm thickness. The growth directions of film were (211), (112), (300) and (202) for HA/Ti composite coating on the surface after heat treatment at $550^{\circ}C$, whereas, the growth direction of film was (110) for Ti coating. The polarization resistance ($R_p$) of HA/Ti composite coated Ti-alloys were higher than those of the Ti and HA coated samples in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Especially, corrosion resistance of Ti-Ta-Nb system increased as Nb content increased.

Growth and Characterization of Ultra-Thin $TiO_2$Film on Mo(100) Surface (Mo(100) 표면에 $TiO_2$초박막의 성장과 특성)

  • Kim, Dae Young
    • Journal of the Korean Chemical Society
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    • v.41 no.5
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    • pp.223-233
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    • 1997
  • Ultra-thin $TiO_2$ films are grown on the Mo(100) surface using evaporated Ti metal under ambient $O_2$ pressure. The thickness of the $TiO_2$ film is controlled by the dosing rate of Ti metal over Mo(100) which is determined from the Auger signal changes with dosing time. 30 ML, 5 ML, and 1.6 ML thick films are prepared and used to determine the growth mechanism, the chemical composition, and the surface structure of the films. The growth mechanism of the $TiO_2$ film on Mo(100) is observed to follow the layer-by-layer growth mechanism. The chemical composition of the film is found to be that of bulk $TiO_2$. The surface plane of the film is (001), which facets irreversibly at 1200 K. The LEED pattern obtained from the film can be explained with the faceted surface with {011} planes reconstructed to $(2\sqrt2{\times}\sqrt2)R45^{\circ}$ with respect to the $TiO_2$ (001) surface. The film is somewhat thermally unstable when annealed to 1300 K. The film sputtered with $Ar^+$ ion is also studied by XPS.

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Features and Properties of $YBa_2$$Cu_3$$O_{7-x}$ Films Grown on SrTi$O_3$ by High Frequency PLD

  • Shi, D.Q.;Ko, R.K.;Song, K.J.;Chung, J.K.;Choi, S.J.;Park, Y.M.;Shin, K.C.;Yoo, S.I.;Park, C.
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.75-79
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    • 2003
  • YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.

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The Dielectric Properties of PZT(52/48)/BST(60/40) Heterolayered Thin Film Prepared bv RF Sputtering Method (RF 스퍼터링법을 이용한 PZT(52/48)/BST(60/40) 이종층 박막의 유전 특성)

  • Kwon, Hyun-Yul;Kim, Ji-Heon;Choi, Eui-Sun;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1621-1623
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    • 2004
  • The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.

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A study on the growth of rutile single crystal by skull melting method (스컬법에 의한 루틸 단결정 성장에 관한 연구)

  • Seok Jeong-Won;Choi Jong-Koen
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.6
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    • pp.262-266
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    • 2004
  • Rutile single crystals were grown by the skull melting method. Ti metal ring was used for initial RF induction heating. The grown crystals were cut into wafer of 5.5 mm diameter and 1mm thickness. The wafers were annealed in air at $1300^{\circ}C$ up to 15 hours and their transmittance spectra $(\lambda= 200~25000 nm)$ were obtained.

Wear Characteristics of TiN Coating by Plasma Enhanced CVD (PECVD에 의한 TiN 코팅의 마모특성 연구)

  • Song, Kun;Ahn, Hyo-Sok
    • Tribology and Lubricants
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    • v.6 no.1
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    • pp.116-125
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    • 1990
  • An experimental programme was established to determine the wear behaviour of TiN coatings of thickness 1 $\mu$m and 3 $\mu$m. by PECVD with the variation of applied load, sliding velocity and sliding distance. It was shown that oxidation of transferred metal as sliding speed increased formed oxide film so that it contributed in decreasing the wear rate. With the roller-on-disc tribometer employed, the wear rate of the roller specimen was decreased with the increase in sliding distance due to the reduction in effective contact pressure. Finally, the severe cracks concentrated at the trailing edge of contact surface were explained in terms of high tensile stress prevailing at the trailing edge of the contact and were identified as a dominant wear mechanism as well as the strong local welding between coating layer and the counter surface, leading to the debonding of the coating layer.

Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Film (강유전체 PZT박막의 신뢰도에 미치는 헤테로구조 전극의 영향에 대한 연구)

  • Lee, Byoung-Soo;Lee, Bok-Hee;Lee, Duch-Chool
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.52 no.1
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    • pp.14-19
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    • 2003
  • The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.