• Journal of Integrative Natural Science
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• v.7 no.3
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• pp.183-187
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• 2014

Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.

• Journal of the Korean Graphic Arts Communication Society
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• v.12 no.1
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• pp.1.1-11
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• 1994

The photosensitive properties and carrier transport in the organic photoconductor with the carrier transport layers(CTL) of polymer matrix doped with two carrier transport materials above carrier generation layer(CGL) containing oxotitanium phthalocyanine (TiOPc) were investigated. The CGL of TiOPc dispersed in poly(vinylbutyral) was formed as thickness of 0.1${\mu}{\textrm}{m}$and the carrier transport layer was prepared by coating polycarbonate and polyester doped with oxadiazoly(OXD), polyvinylcarbazole (PVK), trinitro fluorenone(TNF) as thickness of 10~15${\mu}{\textrm}{m}$, respectively. We have measured half decay exposure,sensitivity and xerographic gain from the photo-induced discharge curve(PIDC). In this work, it was found that the characteristics of carrier transport were mainly caused by the ionization potential difference of constitutive materials in molecularly doped polymer.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.279-286
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• 2008

Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.

• Analytical Science and Technology
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• v.5 no.1
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• pp.103-110
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• 1992

Chemical homogeneity and dispersoid formation in mechanically alloyed Al-Ti composite metal powders were investigated in order to fabricate the high temperature Al-Ti alloys. The homogeneity of composite particles was able to be obtained by MA milling time more than 10 hours with the milling velocity of 400 rpm. The amounts of titanium, carbon and oxygen elements in MA Al-Ti alloys by chemical analysis were 8.2, 1.135 and 0.233 wt.%, respectively. The amount of carbon analyzed corresponds to 90 pet. of carbon contained the PCA of stearic acid. TEM analysis has revealed the presence of the rounded $Al_3Ti$ dispersoids with the size of 250nm and the $Al_4C_3$ dispersoids of cylindrical shape with a size of 50nm in thickness and 150nm in length. Also, the some rounded $Al_2O_3$ dispersoids with a size of about 20nm were found in grain boundaries as well as in matrix.

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.7-11
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• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2305-2308
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• 2012

Perovskite structured barium titanate particles ($BaTiO_3$) platelets were synthesized by molten salt synthesis and topochemical microcrystal conversion. As the precursors of $BaTiO_3$, plate-like $BaBi_4Ti_4O_{15}$ particles were first synthesized by the reaction of $Bi_4Ti_3O_{12}$, $BaCO_3$, and $TiO_2$ at $1080^{\circ}C$ for 3 h in $BaCl_2$-KCl molten salt. After the topochemical reactions, layer-structured $BaBi_4Ti_4O_{15}$ particles transformed to the perovskite $BaTiO_3$ platelets. $BaTiO_3$ particles with thickness of approximately $0.5{\mu}m$ and a length of $10-15{\mu}m$ retained the morphology feature of the $BaBi_4Ti_4O_{15}$ precursor. For <001> $Pb(Mg_{1/3}Nb_{2/3})O_3-32.5PbTiO_3$ (PMNT)-5 wt % PbO piezoelectric ceramics textured with 5 vol % of $BaTiO_3$ templates, the Lotgering factor reached 0.82, and $d_{33}$ was 870 pC/N.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.3
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• pp.221-232
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• 2017

In this study, bipolar plates in fuel cells are formed using rubber forming process. The effects of important parameters in rubber forming such as hardness and thickness of rubber pad, speed and pressure of punch that compress blank, and physical property of materials on the channel depth were analyzed. In the soft material sheet Al1050, deeper channels are formed than in materials STS304 and Ti-G5. Formed channel depth was increased when hardness of rubber pad was lower, thickness of rubber pad was high, and speed and pressure of punch were high. It was found the deepest channel was achieved when forming process condition was set with punch speed and pressure at 30 mm/s and 55 MPa, respectively using rubber pad having hardness Shore A 20 and thickness 60 mm. The channel depths of bipolar plates formed with Al1050, STS304 and Ti-G5 under the above process condition were 0.453, 0.307, and 0.270 mm, respectively. There were no defects such as wrinkle, distortion, and crack found from formed bipolar plates.

• Journal of Powder Materials
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• v.16 no.5
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• pp.305-309
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• 2009

The effect of light scattering layers (400 nm, TiO$_2$ particle) of 4 $\mu$m thickness on the dye-sensitized solar cell has been investigated with a 12 $\mu$m thickness of photo-anode (20 nm, TiO$_2$ particle). Two different structures of scattering layers (separated and back) were applied to investigate the light transmitting behaviors and solar cell properties. The light transmittance and cell efficiency significantly improved with inserting scattering layers. The back scattering layer structure had more effective transmitting behavior, but separated scattering layer (center: 2 $\mu$m, back: 2 $\mu$m) structure (9.83% of efficiency) showing higher efficiency (0.6%), short circuit current density (0.26 mA/cm$^2$) and fill factor (0.02). The inserting separating two scattering layers improved the light harvesting, and relatively thin back scattering layer (2 $\mu$m of thickness) minimized interruption of ion diffusion in liquid electrolyte.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.76-82
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• 1997

The characteristics of optical waeguides and IDT electrodes fabricated for acousto-optic tunable filters (AOTE) used for optical communications were analyzed. A $Ti:LiNbO_3$ in-diffusion method was employed for the formation of the optical waveguide with a dimension of width $8\mu\textrm{m}$, length $30000\mu\textrm{m}$, and thickness $1150{\AA}$. The diffusion was carried at $1050^{\circ}C$ for 8 houss to pattern the optical waveguide with Ti. The resulted waveguide exhibited a single mode at a 1550nm wavelength range and its propagation loss was less than 0.5dB/cm. The width of IDT, with 10 SAW periods, was $5000\mu\textrm{m}$, S11 reflection characteristics and impedances of th eelectrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at th ecenter frquency of 193MHz for Au deposition thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for au deposition thickness of $1600{\AA}$.