• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.637-645
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• 1998

The characteristics of waveguide, electrode and packaging fabricated for acousto-optic tunable filters(AOTF) used for optical communications were analyzed. A $Ti:LiNbO_3$in-diffusing method was employed for the formation of the optical waveguide with a dimension of width $8{\mu}m$, length $30000-50000{\mu}m$ and varying the thickness. The diffusion was carried at $1050^{\circ}C$ for 8 hours to pattern the optical waveguide. The resulted waveguide exhibited a single mode at 1550nm optical wavelength. The width of IDT, with 10 SAM periods, was $5000{\mu}m$ . Impedances of the electrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at the center frequency of 193MHz for electrode thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for $1600\AA$. And the characteristics of packaged AOTF was analyzed. When the electrical frequency 177.1MHz was applied to the device, the mode conversion efficiency was measured as 63% at the optical wavelength 1515nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1587-1588
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• 2006

Tn this paper, PCB (Printed Circuit Board) embedded $BaTiO_3$ MIM capacitors were designed, fabricated, and characterized for low cost organic SOP applications by using 3-D EM simulator and low temperature processes. Size of electrodes and thickness of high dielectric films are optimized for improving the performance characteristics of the proposed embedded MIM capacitors at high frequency regime. The selected thicknesses of the $BaTiO_3$ film are $12{\mu}m$, $16{\mu}m$, and $20{\mu}m$. The fabricated MIM capacitor with dielectric constant of 30 and thickness of $12{\mu}m$ has capacitance density of $21.5p\;F/mm^2$ at 100MHz, maximum quality factor of 37.4 at 300 MHz, a quality factor of 30.9 at 1GHz, self resonant frequency of 5.4 GHz, respectively. The measured capacitances and quality factors are well matched with 3-D EM simulated ones. These embedded capacitors are promising for SOP based advanced electronic systems with various functionality, low cost, small size and volume.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.948-952
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• 2007

In this study, a low temperature sintering multilayer piezoelectric transformer for a DC-DC converter was manufactured using $(Pb,Ca,Sr,)(Ti,Mn,Sb)O_3$ ceramics. Its electrical properties were investigated according to the variation in frequency and load resistance. The voltage step-up ratio of the multilayer piezoelectric transformer showed a maximum value at a resonant frequency of input part and increased with an increase of load resistance. The efficiency of the multilayer piezoelectric transformer showed the highest value at a load resistance of 17 $\Omega$. The output power was increased with increasing input voltage. Temperature increase of the multilayer piezoelectric transformer was increased with the increase of output power. At the load resistance of 17 $\Omega$, the multilayer piezoelectric transformer showed the temperature rises of about $20^{\circ}C$ at the output power of 18 W, and stable driving characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.292-293
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• 2007

In the study, in order to develop low temperature sintering ceramics for multilayer piezoelectric transformer, $(Pb,Ca,Sr)Ti(Mn,Sb)O_3$ ceramics were fabricated using $Na_2CO_3$, $Li_2CO_3$, $MnO_2$ and $Bi_2O_3$ as sintering aids and their dielectric and piezoelectric properties were investigated according to the amount of $Bi_2O_3$ addition. At the sintering temperature of $900^{\circ}C$, density, thickness vibration mode electromechanical coupling factor ($k_t$), thickness vibration mode mechanical quality factor ($Q_{mt}$) and dielecteic constant (${\varepsilon}_r$) showed the optimum value of $6.94[g/cm^3]$, 0.497, 3,162 and 209, respectively, for multilayer piezoelectric transformer application.

• 한국자기학회지
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• 제5권5호
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• 한국표면공학회지
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• 제54권6호
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• pp.324-330
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• 2021

As energy harvesting technology becomes important in relation to environmental issues, piezoelectric materials that convert mechanical energy into electrical energy are attracting attention. However, PZT, a representative material for piezoelectricity, is becoming difficult to use due to the problem that its components can cause environmental pollution. For this reason, recent research suggests a triboelectric nanogenerator (TENG) that generates energy through the combined effect of triboelectricity and electric induction for alternative piezoelectric devices. In TENG, electrical power is determined by the dielectric constant, thickness, and grain generation of the charged material. Therefore, in this study, a Rutile phase TiO₂ thin film with high dielectric constant was formed using the spin-coating process and the effect of annealing was investigated. For electrical analysis, a TENG device was fabricated using PTFE as a material with an opposite charge, and electrical output according to film thickness and grain formation was comparatively analyzed.

• Korean Chemical Engineering Research
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• 제48권4호
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• pp.506-510
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• 2010

염료감응 태양전지에서 $TiO_2$의 표면에서 일어나는 전자의 재결합 현상은 태양전지의 변환효율을 떨어뜨리는 주요한 원인이다. 본 연구에서는 이 전자의 재결합 현상을 제어하기 위해 $TiO_2$의 표면에 에너지 장벽을 도입하여 변환효율을 향상시키고자 하였다. $TiO_2$ 나노전극에 에너지 장벽의 역할을 하는 $Nb_2O_5$를 코팅시켰다. 코팅의 영향을 알아보기 위해 코팅횟수를 변화시키며 실험하였다. 가시광선 영역에서의 반사율로부터 코팅의 유무를 확인하고 회절패턴으로부터 코팅물질이 $Nb_2O_5$임을 확인하였다. 재결합을 제어할 수 있는 코팅막의 두께를 측정해 본 결과, 12회 코팅하였을 때 코팅막의 두께는 약 5 nm로 1회 코팅시 적층되는 코팅막의 두께는 약 0.417 nm로 볼 수 있었다. 코팅횟수에 따른 변환효율의 변화는 코팅막이 없는 경우 2.55%에서 2회 코팅한 경우 4.25%로 약 1.7배 증가하여 2회 코팅의 경우 효율이 가장 높았다. 따라서 $Nb_2O_5$ 2회 코팅의 경우 코팅막의 두께가 약 0.834 nm로 전자의 재결합을 가장 잘 제어할 수 있었다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 춘계학술발표대회 개요집
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• pp.285-287
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• 2002

This study is investigated in variations of micro-structures and mechanical properties of Ti/SUS321L joint with bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed the thickness of their reaction layer increased. In tensile test, it was examined that the tensile strength had maximum value at the bonding time of 5min and decreased after bonding time over 5min because of increasing their oxides and intermetallic compounds.

• 한국재료학회지
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• 제5권1호
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• pp.140-148
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• 1995

Transfer matrix를 사용하여 $TiO_{2}$ 및 Ag 단일 박막과 $TiO_{2}/Ag/TiO_{2}$ 다층 박막의 두계에 따른 투과도 특성을 예측하였으며, 이를 실제 스퍼터 증착하여 제조한 박막의 광학 특성과 비교하였다. $TiO_{2}$ 및 Ag 박막에서는 복소굴절률을 사용하므로써 실제 증착박막에서 측정된 특성과 근접한 투과도 곡선의 예측이 가능하였다. $TiO_{2}/Ag/TiO_{2}$ 3층 박막의 광학 특성은 Ag의 $TiO_{2}$층으로의 확산 및 응집에 의해 transfer matrix로 예측한 투과도 특성과 전혀 다른 거동을 나타내었다. 그러나 4nm 및 6nm 두계의 Ti 박막을 확산방지층으로 증착한 Ti$O_{2}$/Ti/Ag/Ti/Ti$O_{2}$ 구조의 5층 박막에서는 transfer matrix를 사용하여 예측한 $TiO_{2}/Ag/TiO_{2}$ 3층 박막의 투과도 곡선과 유사한 광학 특성을 얻을 수 있었다.