• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.58-60
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• 2004

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• 한국안광학회지
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• 제14권1호
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• pp.57-62
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• 2009

목적: Magnetron의 세기를 비대칭으로 한 unbalanced magnetron sputtering 장치를 설계 제작하고 sus304시편 위에 TiN박막을 증착하여 색상과 경도에 관한 연구를 하고자 한다. 방법: 증착된 박막표면의 화학조성을 양적으로 분석하기 위하여 XPS high resolution scan과 curve fitting을 수행하였으며, 박막 표면의 경도를 측정하기 위해 nano indentation 장비를 이용하였다. 결과: 박막 두께가 두꺼워지면 박막의 색상은 처음에는 연한 금색, 시간이 지남에 따라 어두운 금색, 연보라, 남색으로 바뀌었다. 두께에 따른 박막의 색상변화는 박막에$TiO_{x}N_{y}$, $TiO_2$, TiN과 같은 세가지 화합물의 조성변화에 기인함을 알 수 있었으며,$ TiO_{x}N_{y}$의 조성변화가 두께에 따른 색상변화에 가장 큰 영향을 미치는 것을 여겨졌다. 결론: TiN박막의 비커스 경도가 TiN의 일반적인 경도보다 수치가 작은 것은 박막이 TiN, $TiO_2$,$TiO_{x}N_{y}$ 세가지 물질 섞여 있기 때문이라고 여겨지며, 두께에 따른 박막의 경도가 점점 커지다가 줄어드는 것은 두께에 따른 TiN 양과 밀접한 관계가 있음을 알 수 있었다.

• 한국재료학회지
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• 제5권1호
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• pp.140-148
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• 1995

Transfer matrix를 사용하여 $TiO_{2}$ 및 Ag 단일 박막과 $TiO_{2}/Ag/TiO_{2}$ 다층 박막의 두계에 따른 투과도 특성을 예측하였으며, 이를 실제 스퍼터 증착하여 제조한 박막의 광학 특성과 비교하였다. $TiO_{2}$ 및 Ag 박막에서는 복소굴절률을 사용하므로써 실제 증착박막에서 측정된 특성과 근접한 투과도 곡선의 예측이 가능하였다. $TiO_{2}/Ag/TiO_{2}$ 3층 박막의 광학 특성은 Ag의 $TiO_{2}$층으로의 확산 및 응집에 의해 transfer matrix로 예측한 투과도 특성과 전혀 다른 거동을 나타내었다. 그러나 4nm 및 6nm 두계의 Ti 박막을 확산방지층으로 증착한 Ti$O_{2}$/Ti/Ag/Ti/Ti$O_{2}$ 구조의 5층 박막에서는 transfer matrix를 사용하여 예측한 $TiO_{2}/Ag/TiO_{2}$ 3층 박막의 투과도 곡선과 유사한 광학 특성을 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• 한국재료학회지
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• 제24권4호
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• 열처리공학회지
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• 제28권6호
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• 한국세라믹학회지
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• 제36권11호
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• pp.1211-1216
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• 1999

TiO2 thin films were prepared by reactive magnetron sputtering on glass substrate and subjected into investigation about their hydrophilic properties. Varing Ar/O2 ration and post annealing at 50$0^{\circ}C$ for 12h anatase and rutile phases of TiO2 films were obtained. Hydrophilic properties were evaluated by determination of contact angle of water droplet on TiO2 surface. On as-annealed TiO2 films water droplet spreaded widely with ~0$^{\circ}$contact angle. Sonication(60 Hz, 28kHz 40kHz) and following dark room treatments turned these hydrophilic TiO2 films into hydrophobic state. All of hydrophobic films were converted recersibly into their original state after UV illumination. Hydrophobic states of anatase films were saturated after sonication and remain same during dark room treatment. But it was found that the conversion into hydrophobic state of rutile films progressed. further after sonication. Therefore it was concluded that Ti3+/Ti+4 ratio is the key to determine hydrophilicity of TiO2 surface so that different surface structure of polymorphs could lead to unique characteristics.

• 한국재료학회지
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• 제22권8호
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.210-213
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• 2005

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.