• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.6
• /
• pp.61-70
• /
• 1999

An optical switch composed of three-identical, equally-spaced $Ti:LinbO_3$ waveguides and overlaid Al electrodes of CPW structure was designed and fabricated. Patterned Ti was diffused into z-cut $LinbO_3$ substrates at $1025^{\circ}C$ for 6 hours to make a three-waveguide directional coupler. $SiO_2$ buffer layer of $1.2{\mu}m$ was grown by the PECVD to reduce the propagation loss of TM mode, and Al electrodes were built on the layer for switching the guided beam. For an incident beam of ${\lambda}=1.3{\mu}m$, almost perfect optical coupling between two outer waveguides was observed. When an electric field was applied to detune the three waveguides anti-symmetrically, the optical switching phenomenon was successfully confirmed.

• Journal of the Korean Society for Heat Treatment
• /
• v.25 no.5
• /
• pp.244-248
• /
• 2012

ITO/$TiO_2$ films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at $300^{\circ}C$ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/$TiO_2$ films annealed at $300^{\circ}C$ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of $3.05{\times}10^{-4}{\Omega}cm$, in this study.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.185-188
• /
• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Journal of the Korean Vacuum Society
• /
• v.18 no.2
• /
• pp.141-146
• /
• 2009

PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.

• Journal of the Korean Magnetics Society
• /
• v.9 no.4
• /
• pp.196-202
• /
• 1999

The magnetic properties and the microstructures of the Mn-Ir/Ni-Fe multilayers with various stacking structures and buffer layer materials have been investigated. The (111) texture of Mn-Ir/Ni-Fe was observed in the top structures with Ta, Zr, or Ti buffer materials. However, all Mn-Ir/Ni-Fe multilayers with top structures exhibit high $H_{ex}$, regardless of the (111) preferred orientation of Mn-Ir film. The samples whose high $H_{ex}$ observed grain-to-grain epitaxial tendency and the large grain of Mn-Ir film at the interface. It can be explained that the $H_{ex}$ does not depend on the (111) texture of the Mn-Ir film and the interface roughness, but depends on the grain size of the Mn-Ir film and the morphology of the interface between the Mn-Ir and the Ni-Fe grains, and the $H_c$ depends on the interface roughness between the Mn-Ir and the Ni-Fe films.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.10a
• /
• pp.120-122
• /
• 2003

BaZrO$_3$and SrTiO$_3$(STO) thin films were Pulsed laser deposited on biaxially textured Ni and Ni-W alloy substrates to be used as single buffer layer for coated conductor. The texture of the films were analysed using the GADDS (general area detector diffraction system). Both films deposited on the metal tape were strongly (001) oriented, and in-plane textured (Δø (BZO) =9$^{\circ}$, Δø (STO) = 10$^{\circ}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.22-25
• /
• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• ETRI Journal
• /
• v.31 no.6
• /
• pp.680-687
• /
• 2009

This paper reports on an improved piezoelectric microspeaker with a high sound pressure level of 90 dB, a total harmonic distortion of less than 15%, and coherence higher than 0.9. The fabricated Pb(Zr,Ti)$O_3$ (PZT) microspeakers have a thickness of only 1 mm including the speaker frame and an active area of 18 mm${\times}$20 mm. To achieve higher sound pressure and lower distortion, the PZT piezoelectric microspeaker has a well-designed speaker frame and a piezoelectric diaphragm consisting of a tilted PZT membrane and silicone buffer layer. From the simulation and measurement results, we confirmed that the silicon buffer layer can lower the first resonant frequency, which enhances the microspeaker's sound pressure at a low frequency range and can also reduce useless distortion generated by the harmonics. The fabricated PZT piezoelectric microspeakers are implemented on a multichannel speaker array system for personal acoustical space generation. The output sound pressure at a 30 cm distance away from the center of the speaker line array is 15 dB higher than the sound pressure at the neighboring region 30 degrees from the vertical axis.

• Journal of the Korean institute of surface engineering
• /
• v.34 no.5
• /
• pp.421-428
• /
• 2001

New WC-CrN superlattice film was deposited on Si substrate (500$\mu\textrm{m}$) using cathodic arc ion plating system. The microstructure and mechanical properties of the film depend on the superlattice period (λ). In the X-ray diffraction analysis (XRD), preferred orientation of microstructure was changed according to various superlattice periods(λ). During the Transmission Electron Microscope analysis (TEM), microstructure and superlattice period (λ) of the WC - CrN superlattice film was confirmed. Hardness and adhesion of the deposited film was evaluated by nanoindentation test and scratch test, respectively. As a result of nanoindentation test, the hardness of WC - CrN superlattice film was gained about 40GPa at superlattice period (λ) with 7nm. Also residual stress with various superlattice period (λ) was measured on Si wafer (100$\mu\textrm{m}$) by conventional beam-bending technique. The residual stress of the film was reduced to a value of 0.2 GPa by introducing Ti - WC buffer layers periodically with a thickness ratio ($t_{buffer}$/$t_{buffer+superlattice}$ ). To the end, for the evaluation of oxidation resistance at the elevated temperature, CrN single layer and WC - CrN superlattice films with various superlattice periods on SKD61 substrate was measured and compared with the oxidation resistance.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1440-1441
• /
• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).