• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.834-837
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• 2003

In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.282-287
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• 2016

This study involves enhancing the performance of the $Na(Li,Ti)O_2$ system as an Na-ion battery anode with the addition of Mg, which partially replaces Li ions. We perform both computational and experimental approaches to achieve a higher reversible capacity and a faster transport of Na ions for the devised system. Computational results indicate that the $Na(Li,Mg,Ti)O_2$ system can provide a lower-barrier path for Na-ion diffusion than can a system without the addition of Mg. Experimentally, we synthesize various $Na_z(Li_y,Mg_x,Ti)O_2$ systems and evaluate their electrochemical characteristics. In agreement with the theoretical study, Mg addition to such systems improves general cell performance. For example, the prepared $Na_{0.646}(Li_{0.207}Mg_{0.013}Ti_{0.78})O_2$ system displays an increase in reversible capacity of 8.5% and in rate performance of 13.5%, compared to those characteristics of a system without the addition of Mg. Computational results indicate that these improvements can be attributed to the slight widening of the Na-$O_6$ layer in the presence of Mg in the $(Li,Ti)O_6$ layer.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.14-19
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• 2003

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.908-913
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• 1997

Multilayer NbCxC1-x/Y2O3/Ti were sputter-coated on the alumina substrate, starting with a 0.7 ㎛ thick NbCxC1-x layer grown on substrate, followed by 0.7 ㎛ thick Y2O3 layer and 1 ㎛ thick Ti layer. To find out the optimum conditions for thickness uniformity and adhesion, sputtering works have been done with the variation of sputtering power and Ar pressure. After vacuum annealing at 950℃ and 1000℃, the thermal stability of the NbCxC1-x/Y2O3/Ti coated alumina substrates has been investigated by peel off test. The coating scheme didn't cause any debonded layer after an annealing at 950℃ for 3hrs. However, it was peeled off after annealing at 1000℃ for 3hr. It was found that the thermal stability of Al2O3/NbCxC1-x/Y2O3/Ti coating scheme changed with the NbCxC1-x composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.129-133
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• 2019

TiN thin films were fabricated using an unbalanced magnetron sputtering (UBMS) system, and their structure and surface characteristics as well as their optical and tribological properties were evaluated. The hardness, elastic modulus, adhesive force, surface roughness, and transmittance of the Ti thin films fabricated using the UBMS system were 11.5 GPa, 103 GPa, 27.5 N, 2.45 nm and 20%, respectively. The TiN films prepared with various proportions of nitrogen as the reaction gas exhibited maximum values for the hardness, elastic modulus, critical load, RMS roughness and transmittance of approximately 19.2 GPa, 182 GPa, 27.3 N, 0.98 nm, and 85%, respectively. Moreover, the TiN thin film fabricated under the condition of 30 sccm nitrogen gas showed the optimal physical properties. In summary, the TiN thin films fabricated using the UBMS system exhibited excellent hardness, elastic modulus, adhesion, and smooth surface in addition to good hydrophilic properties.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.120-122
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• 2002

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.90-96
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• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.921-925
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• 2000

Characteristics of Pb(Mg, Nb)O$_3$-Pb(Zr, Ti)O$_3$system thick films fabricated by a screen printing method were investigated. The buffer layer were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited Pt as a electrode by sputtering on Ag-Pb layer. The printed thick films were burned out at 650$\^{C}$ and sintered at 950$\^{C}$ in O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20㎛ and Ag-Pb layer acted as a diffusion barrier above 3㎛ thickness. The PMN-PZT thick films were screen printed on Pt/Ag-Pb(6m) and sintered by 2nd step (650$\^{C}$/20min and 950$\^{C}$/1h) using paste mixed PMN-PZT and binder in the ratio of 70:30, and the remnant polarization of thick film was 9.1$\mu$C/㎠ in this conditions.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.193-197
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• 2000

A polarized mode convertible, wavelength tunable optical filters with acoustic barriers and acousto-optic effect have been produced in LiNb03 substrate utilizing the Ti double diffusion technique. Polarization conversion in excess of 81 % and a spectral width of -200 kHz (-1.83 nm) were achieved at a wavelength of 1551.6 nm and RF frequencies of 173.07 kHz and 173.05 kHz for both transverse electric (TE) and transverse magnetic (lM) input polarizations, respectively. The electrical driving power was 10.97 mW and reduced to about 10% of one for an optical filter without an acoustic barrier. A linear tuning rate of 8.2 nmlMHz and sidelobe intensity of -4 dB was demonstrated. rated.