• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 B
• /
• pp.540-542
• /
• 1999

We develop jumping ring system with sensor and control system using dynamic neural networks. Jumping ring, sensor and control system are controlled by 586 PC using Turbo C program. Sensor system is composed of 20 optical sensors and encoder. The control circuits are consisted of thyristor, FET and phase controller. A/D converter and optical sensor acquire real time motion data of the jumping ring system. The information of acquired jumping ring Position is estimated by using dynamic neural networks. Estimated control signals are sent to control circuits and D/A converter to track desired position of the jumping ring system. Experiment results are given to verify that proposed dynamic controller is useful in real jumping ring system.

• 한국정보전자통신기술학회논문지
• /
• 제12권2호
• /
• pp.150-154
• /
• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• 전기전자학회논문지
• /
• 제8권1호
• /
• pp.136-144
• /
• 2004

2차원 소자 시뮬레이터를 이용한 AC 해석 결과를 토대로 ESD 보호용 소자의 AC 등가회로 모델링을 시도한다. NMOS 보호용 트랜지스터의 AC 등가회로는 다소 복잡한 형태로 모델링되며, 이를 간단히 RC 직렬회로로 모델링할 경우 주파수 영역에 따라 오차가 크게 발생할 수 있음을 설명한다. 또한 싸이리스터형 pnpn 보호용 소자의 등가회로는 간단히 RC 직렬회로로 모델링될 수 있음을 보인다. 추출한 등가회로를 이용한 회로 시뮬레이션에 근거하여, 주요 RF 회로의 하나인 LNA에 ESD 보호용 소자를 장착할 경우 보호용 소자의 기생성분이 LNA의 특성에 미치는 영향에 대해 조사해 본다. NMOS 보호용 트랜지스터를 단순히 커패시터 하나만으로 모델링할 경우 회로특성의 예측에 큰 오류가 발생할 수 있음을 설명한다. 또한 제시한 pnpn 보호용 소자를 사용할 경우 보호용 소자의 장착에 의한 LNA 회로의 특성 열화가 크게 감소될 수 있음을 확인한다.

• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 2002년도 학술대회논문집
• /
• pp.281-286
• /
• 2002

An existent hoist drive system is using each different drive equipment in control of Hoisting, traveling(T/L), traversing(T/S) driving, so there are much energy losses because of excessive weight. Also, power circuits are using relay contact, so working environment are frequent secession accident etc.. by shock on unfavorable condition, and there is danger of safety accident, maintenance has frequent problem and so on. To solve these problem, it is integrated each driving power supply in drive system for hoist control and drive, utility power supply etc.. by single device in this research. The power circuit is consisted of non-contact circuit applying to bidirectional voltage controller circuit using thyristor that is power semiconductor switching device

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 2007년도 추계학술대회 논문집
• /
• pp.1438-1444
• /
• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 2009년도 춘계학술대회 논문집
• /
• pp.1943-1950
• /
• 2009

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The gate oxide structure gives the main influence on the changes in the electrical characteristics affected by environments such as radiation and temperature, etc.. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide. In this paper, the electrical characteristics are simulated by SPICE simulation, and the parameters are found to design optimized circuits.

• Journal of international Conference on Electrical Machines and Systems
• /
• 제1권1호
• /
• pp.121-127
• /
• 2012

An electric power compensation system for a DC transmission system with an integrated wind turbine generator is proposed. The proposed compensation system consists of a synchronous generator and a duplex reactor. This apparatus is connected to the sending-end circuit of the DC transmission system. A set of steady-state equations of the system is first derived. Then, the effect of the duplex reactor, which can eliminate the sending-end grid current distortion due to commutation of the converter, is explored. The relationships among power at the sending-end circuit are also revealed. It is shown that fluctuations in the sending-end grid power due to changes in wind velocities are compensated with the proposed system. Finally, the effects of the sending-end grid conditions on the steady-state characteristics of the system are studied.

• Journal of Power Electronics
• /
• 제15권4호
• /
• pp.1074-1084
• /
• 2015

These days, the widespread use of sensitive loads and distributed generators makes the solid-state circuit breaker (SSCB) an essential component in power circuits to achieve a high power quality for AC Grids. In traditional AC SSCB using SCRs, some auxiliary mechanical devices are required to make the reclosing operation possible before fault recovery. However, the proposed AC SSCB can break quickly and then be reclosed without auxiliary mechanical devices even during the short-circuit fault. Moreover, its fault current breaking time is short and its SSCB reclosing operation is fast. This results in a reduction of the economic losses due to fault currents and power outages. Through simulations and experiments on short-circuit faults, the performance characteristics of the proposed AC SSCB are verified. A design guideline is also suggested to apply the proposed AC SSCB to various AC grids.

• 전력전자학회논문지
• /
• 제9권2호
• /
• pp.97-104
• /
• 2004

회생차량에서 직류전원단으로 회생되는 에너지를 교류전원측으로 반환하여 활용하기 위한 장치로서 사이리스터 인버터가 널리 사용되고 있다 기존의 사이리스터 인버터는 단방향의 위상제어방식으로 출력의 역률제어가 불가능하고, 고조파 함유율이 높아 별도의 필터를 필요로 한다. 본 연구에서는 이러한 문제점을 해결하고자 스위칭 소자로서 양방향 제어가 가능한 IGBT를 채용하여 Space vector PWM 제어를 함으로서 유효전력 및 무효전력 제어가 가능한 인버터를 개발하였다. 개발한 인버터는 상업용으로 실계통에 바로 적용이 가능하도록 경제성 및 신뢰성을 제고하여 전체 제어시스템을 디지털 형식으로 구현하였고, 저대역 필터를 내장하여 고조파 발생을 억제하였으며, 전체 부피를 콤팩트하게 하였다. 본 논문에서는 전기철도 직류급전계통에 적합한 회생 인버터의 설계기준, 기술사양, 전력회로, 인버터 및 계통연계 제어기법, 개발시스템, 시험결과 및 특성 등을 기술하였다.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2009년도 춘계학술대회
• /
• pp.845-848
• /
• 2009

전력용반도체(Power Management IC)는 전력의 변환이나 제어용으로 최적화되어 있는 전력장치용 반도체 소자로서 전자기기에 들어오는 전력을 그 전자기기에 맞게 변경하는 역할을 하며, 일반 반도체에 비해서 고내압화, 큰 전류화, 고주파수화 되어 있다. 전력용반도체는 전기가 쓰이는 제품에는 다 들어가며, 자동차, 공업제품, 컴퓨터와 주변기기, 통신, 가전제품, 모바일 기술, 대체 에너지 등에 대한 수요 증가가 시장의 성장을 촉진한다. 전력용반도체 개발을 통해 대일무역적자 해소 기여, 취약한 비메모리 산업의 육성을 통한 반도체산업의 균형발전, 신성장동력 창출을 통한 미래 경제발전을 도모할 수 있다. 본 고에서는 반도체 부문의 미래 유망품목인 전력용반도체의 필요성 및 중요성, 시장현황 및 전망을 중심으로 살펴보고 결론에서 정책적 시사점을 도출하고자 한다.