• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.4
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• pp.789-794
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• 2017

Subthreshold current model is presented using analytical potential distribution of junctionless cylindrical surrounding-gate (CSG) MOSFET and threshold voltage shift is analyzed by this model. Junctionless CSG MOSFET is significantly outstanding for controllability of gate to carrier flow due to channel surrounded by gate. Poisson's equation is solved using parabolic potential distribution, and subthreshold current model is suggested by center potential distribution derived. Threshold voltage is defined as gate voltage corresponding to subthreshold current of $0.1{\mu}A$, and compared with result of two dimensional simulation. Since results between this model and 2D simulation are good agreement, threshold voltage shift is investigated for channel dimension and doping concentration of junctionless CSG MOSFET. As a result, threshold voltage shift increases for large channel radius and oxide thickness. It is resultingly shown that threshold voltage increases for the large difference of doping concentrations between source/drain and channel.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.279-284
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• 1998

Applicability of the threshold burnup for rim formation was investigated as a function of temperature by Rest's model. The threshold burnup was the lowest in the intermediate temperature region, while on the other temperature regions the threshold burnup is higher. The rim porosity was predicted by the van der Waals equation based of the rim pore radius of 0.75${\mu}{\textrm}{m}$ and the overpressurization model on rim pores. The calculated centerline temperature is in good agreement with the measured temperature. However, more efforts seem to be necessary for the mechanistic model of the rim effect including rim growth with the fuel burnup.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.306-312
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• 1996

The performance of the failure detection algorithm may be greatly influenced by the model uncertainty. It is very important to design a robust failure detection system to the model uncertainty. In this paper, a design procedure to generate failure detection algorithm is proposed. The design procedure suggested is based on the concept of the‘threshold selector［1］’. The H$\infty$ control algorithm is used to derive a threshold selector which is robust to the model uncertainty, The threshold selector derived can be used to develop a failure detection system together with the weighted cumulative sum algorithm［3］. Computer simulation study showed that the failure detection system designed for an ISA(Integrated Servo Actuator) system by using the proposed method is robust to the model uncertainty.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.4 no.3
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• pp.400-410
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• 2010

In an identity-based threshold broadcast encryption (IDTHBE) scheme, a broadcaster chooses a set of n recipients and a threshold value t, and the plaintext can be recovered only if at least t receivers cooperate. IDTHBE scheme is different from the standard threshold public key encryption schemes, where the set of receivers and the threshold value are decided from the beginning. This kind of scheme has wide applications in ad hoc networks. Previously proposed IDTHBE schemes have ciphertexts which contain at least n elements. In addition, the security of theses schemes relies on the random oracles. In this paper, we introduce two new constructions of IDTHBE for ad hoc networks. Our first scheme achieves S-size private keys while the modified scheme achieves constant size private keys. Both schemes achieve approximately (n-t)-size ciphertexts. Furthermore, we also show that they are provablesecurity under the decision bilinear Diffie-Hellman Exponent (BDHE) assumption in the standard model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Journal of the Korean Regional Science Association
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• v.13 no.2
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• pp.45-54
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• 1997

A regional economy is characterized as a spatial economy. However the literature shows that it has been treated as a point economy since space is little recognized in regional modeling due to mathematical complication. This leads to the fact that regional model does not sufficiently represent regional characteristic. This paper attempts to construct a regional growth model in a partial equilibrium framework specifically taking into consideration land as a primary factor. The model is formulated largely neoclassical. Labor is assumed to move in response to differences in the wage rate, while capital is perfectly mobile across regions. The paper shows that two growth equilibrium points exist, one stable equilibrium point and the other unstable equilibrium point. The unstable growth equilibrium indicates the existence of minimum threshold that a region must overcome the minimum threshold to grow constantly. Consequently, directions of regional growth are characterized by two growth paths depending on the initial condition of a region. That is to say, a region below the minimum threshold is converging toward the lower stable equilibrium point over time. When a regional economy initially lies above the minimum threshold, it will grow forever. A regional economy is not thus necessarily converging a stationary is not thus necessarily converging a stationary equilibrium point through factor movement. Finally, the impacts of the presence of agglomeration economies and diseconomies are analyzed through the phase diagram. The paper also shows that agglomeration economies result in lowering the minimum threshold and in escalating the level of stable equilibrium However, when agglomeration diseconomies prevail, the results are opposite, i.e., rising the minimum threshold of growth and lowering the growth level of stable equilibrium.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• The Korean Journal of Applied Statistics
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• v.18 no.1
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• pp.173-182
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• 2005

A Bayesian threshold model is considered to analyze binary or ordered categorical traits. Gibbs sampler for making full Bayesian inferences about the category probability as well as the regression coefficients is described. The model can be regarded as an alternative to the ordered logit regression model. Numerical examples are shown to demonstrate the efficiency of the model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.104-109
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• 2019

An analytical threshold voltage model is proposed to analyze the threshold voltage roll-off and drain-induced barrier lowering (DIBL) for a junction-based double-gate (JBDG) MOSFET and a junction-less double-gate (JLDG) MOSFET. We used the series-type potential distribution function derived from the Poisson equation, and observed that it is sufficient to use n=1 due to the drastic decrease in eigenvalues when increasing the n of the series-type potential function. The threshold voltage derived from this threshold voltage model was in good agreement with the result of TCAD simulation. The threshold voltage roll-off of the JBDG MOSFET was about 57% better than that of the JLDG MOSFET for a channel length of 25 nm, channel thickness of 10 nm, and oxide thickness of 2 nm. The DIBL of the JBDG MOSFET was about 12% better than that of the JLDG MOSFET, at a gate metal work-function of 5 eV. It was also found that decreasing the work-function of the gate metal significantly reduces the DIBL.

• Asian Journal of Business Environment
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• v.11 no.1
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• pp.17-25
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• 2021

Purpose: This study extends previous empirical work on the threshold effects of institutions on the relationship between infrastructure and economic growth. It does so by using three sub-indices of institutions as the threshold variable in place of aggregate index. This is with a view to determining the roles of the sub-indices in the nexus between infrastructure and economic growth. Research design, data and methodology: The analysis is based on a dynamic panel threshold regression model using a panel data set comprising 41 countries in Sub-Saharan Africa over the sample period of 1996-2015. Data are obtained from Ogbaro (2019). Results: The study finds that infrastructure exerts significant positive effects on economic growth below and above the threshold values of the three sub-indices, with higher effects above the threshold values. Results also show that on average, the Sub-Saharan African countries are not able to satisfy any of the threshold conditions, which accounts for their poor growth experience. Conclusion: The study concludes that countries with weak institutions do not benefit maximally from infrastructure development policies. The paper, therefore, recommends that countries in Sub-Saharan Africa need to focus on improving their institutional patterns if they are to reap the optimum benefits from their infrastructure development efforts.