• Journal of Radiation Protection and Research
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• v.23 no.3
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• pp.185-196
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• 1998

현재의 방사선방호 원칙과 체계는 국제방사선방호위원회 (ICRP)의 권고에 기반을 두고 있 다. ICRP 의 권고는 대부분 히로시마/나카사키 원폭피해 생존자들에 대한 역학조사 및 수명 연구결과 그리고 관련 방사선생물학 연구결과를 바탕으로 전세계 5개 인구집단(일본, 미국, 푸에리토리코, 영국과 중국)에 대한 방사선위험계수의 예측 및 평가결과에 근거를 두고 있다. 이 저선량 방사선의 (확률적 영향) 위험계수는 인체피폭 방사선량과 그 영향간에는 선형 비례관계가 있으며 영향유발의 문턱값이 존재하지 않는다는 가정인 '선형 무문턱값 선량-영향 모델 (Linear No-Threshold Dose-Effect Model, 이른바 LNT 모텔)' 을 도입하여 유도된 것이다(譯者 밑줄). 그러나 이 LNT 가정의 과학적 근거와 정당성에 대한 비난이 원자력산업계나 일부 과학자들에 의해 제기된 이래, 최근에는 미국 보건물리학회 (HPS)에서 'LNT 가정이 선량과 영향의 관계를 단순화하며 낮은 선량의 위험음 과대평가한다'는 성명서를 발표하기도 했다. 이후 이에 대한 논쟁이 다시 시작되어, 1997 년에 스페인의 Sevill에서는 IAEA와 WHO의 공동주최와 UNSCEAR의 협조로 '저준위 방사선 영향에 대한 국제회의'가 개최되기도 하였으나 아직 어느 쪽에도 유리한 결론이 단정적으로 나지 않았으며, 실질적인 대안이 없는 현실에서 이 LNT 가정은 여전히 방사선방호의 철학적 기초로 남아 있다(譯者 밑줄). 한편, 저선량 방사선의 영향에 대해서는 우리나라에서도 '방사선방어학회, ‘98 년 춘계 심포지움' 및 '원자력학회, '98 년 춘계 학술발표회 워크??????'에서 한양대학교의 이재기 교수에 의하여 소개, 논의된 바 있다.이 논문은 이러한 논의의 후속으로 역자중 일인이 위원으로 있는 OECD/NEA 방사선방호위원회 (CRPPH)가 최근에 ('98.7.) 발간한 보고서를 번역, 주해한 것으로, 과학지식의 진보에 따라 방사선방호분야에서 관심이 되는 주제들에 대한 위원회의 검토의견을 소개하고 있다. 따라서 이 논문이 국내의 방사선방호분야 관계자들에게 최신정보 습득과 지식함양에 좋은 도움이 되기를 기대한다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.11C
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• pp.905-916
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• 2008

In this paper, we propose a new method which estimates and encrypts significant component of digital hologram using discrete wavelet packet transform (DWPT). After analyzing the characteristics of digital hologram in spatial and frequency domain, the required information for ciphering digital hologram was extracted. Based on this information an ciphering method was proposed with wavelet transform and packetization of subbands. The proposed algorithm can encrypt digital hologram in various robust from selecting transform-level and energy threshold. From analyzing the encryption effect numerically and visually, the optimized parameter for encryption is presented. Without additional analyzing process, one can encrypt efficiently digital hologram using the proposed parameter. Although only 0.032% among total data is encrypted, the reconstructed object dose not identified. The paketization information of subbands and the cipher key can be used for the entire secret key.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.10
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• pp.715-721
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• 2014

In decades, many researchers have studied the time delay estimation (TDE) method for the signals in the two different receivers. The channel estimation based TDE is one of the typical TDE methods. The channel estimation based TDE models the time delay between two receiving signals as an impulse response in a channel between two receivers. In general the impulse response becomes sparse. However, most conventional TDE algorithms cannot have utilized the sparsity. In this paper, we propose a TDE method taking the sparsity into consideration. The performance comparison shows that the proposed algorithm improves the estimation accuracy by 10 dB in the white gaussian source. In addition, even in the colored source, the proposed algorithm doesn't show the estimation threshold effect.

• Current Optics and Photonics
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• v.4 no.5
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• pp.434-440
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• 2020

Based on single-mode rate equations, we present an improved equivalent-circuit model for distributed-feedback (DFB) lasers that accounts for the effects of parasitic parameters and nonradiative recombination. This equivalent-circuit model is composed of a parasitic circuit, an electrical circuit, an optical circuit, and a phase circuit, modeling the circuit equations transformed from the rate equations. The validity of the proposed circuit model is verified by comparing simulation results to measured results. The results show that the slope efficiency and threshold current of the model are 0.22 W/A and 13 mA respectively. It is also shown that increasing bias current results in the increase of the relaxation-oscillation frequency. Moreover, we show that the larger the bias current, the lower the frequency chirp, increasing the possibility of extending the transmission distance of an optical-fiber communication system. The results indicate that the proposed circuit model can accurately predict a DFB laser's static and dynamic characteristics.

• Journal of The Korean Society of Clinical Toxicology
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• v.7 no.2
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• pp.77-82
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• 2009

Purpose: In highly doses, endosulfan lowers the seizure threshold and elicits central nervous system stimulation, which can result in seizures, respiratory failure, and death. Management of seizure control is essential for survival and prognosis of intoxicated patients. This study assessed whether seizure time was an independent predictor mortality in patients with endosulfan poisoning. Methods: This retrospective study enrolled patients with endosulfan poisoning presenting to Masan Samsung Hospital and Gyeongsang National University Hospital from January 2003 to December 2008. The data were collected from clinical records and laboratory files. Using a multivariate logistic analysis, data on the total population was retrospectively analyzed for association with mortality. Results: Of the 24 patients with endosulfan poisoning, nineteen (79.1%) experienced seizure. The patients in the seizure group showed significantly lower Glasgow coma scale score, base excess, bicarbonate, and significant existence of mechanical ventilation, as compared to the non seizure group (n=5). Seizure, Glasgow coma scale score, systolic blood pressure, bicarbonate level, need for respiratory support, pulse rate, respiratory rate, pH, base excess, and seizure time were associated with mortality. The fatality rate of endosulfan poisoning was 54.1% with higher mortality among patients experiencing. Longer seizure time was associated with higher mortality. Conclusion: Seizure time can be a significant independent predictor of mortality in patients with acute endosulfan poisoning. Physicians should aggressively treat for seizure control in patients with acute endosulfan poisoning.

• ETRI Journal
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• v.37 no.6
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• pp.1135-1142
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• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• ETRI Journal
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• v.31 no.6
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.76-85
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• 2000

Effects of the random fluctuation in grating half-period have been studied by an effective index transfer matrix method in DFB lasers. The laser facets are assumed to be perfectly antireflection coated, and the period fluctuation is modeled as a Gaussian random variable. The random fluctuation breaks spectral symmetry in both uniform-grating and quarter-wavelength -shifted(QWS) DFB lasers, and decreases the effective coupling coefficient. This leads to increased average mirror loss of ${\pm}$1 modes and reduced stopband width in uniform grating DFB lasers, and degradation in the wavelength accuracy and the single mode stability in QWS-DFB lasers. Threshold gain difference decreases with increasing period fluctuation irrespective of grating coupling coefficient in QWS-DFB lasers, while spatial hole-burning effect is exacerbated or alleviated when the normalized coupling coefficient is lower and higher than 1.5, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.46-54
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• 1984

A silicon-gate n-well CMOS process with 3 $\mu$m gate length was developed and its possibility for the applications was discussed,. Threshold voltage was easily controlled by ion implantation and 3-$\mu$m gate length with 650 $\AA$ oxide shows ignorable short channel effect. Large value of Al-n+ contact resistance is one of the problems in fabrications of VLSI circuits. Transfer characteristics of CMOS inverter is fairly good and the propagation delay time per stage in ring oscillator with layout of (W/L) PMOS /(W/L) NMOS =(10/5)/(5/5) is about 3.4 nsec. catch-up occurs on substrate current of 3-5 mA in this process and critically dependent on the well doping density and nt-source to n-well space. Therefore, research, more on latch-up characteristics as a function of n-well profile and design rule, especially n+-source to n-well space, is required.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.7
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• pp.32-38
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• 2012

In this paper, to eliminate intersymbol interference of the received signal due to multipath propagation, a parallel equalization algorithm using two error estimation functions is proposed. In the proposed algorithm, multilevel two-dimensional signals are considered as equivalent binary signals, then error signals are estimated using the sigmoid nonlinearity effective at the initial phase equalization and threshold nonlinearity with high steady-state performance. The two errors are scaled by a weight depending on the relative accuracy of the two error estimations, then two filters are updated differentially. As a result, the combined output of two filters was to be the optimum value, fast convergence at initial stage of equalization and low steady-state error level were achieved at the same time thanks to the combining effect of two operation modes smoothly. Usefulness of the proposed algorithm was verified and compared with the conventional method through computer simulations.