• Title/Summary/Keyword: Threshold Switching

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Advances in Zinc Oxide-Based Devices for Active Matrix Displays

  • Mann, Mark;Li, Flora;Kiani, Ahmed;Paul, Debjani;Flewitt, Andrew;Milne, William;Dutson, James;Wakeham, Steve J.;Thwaites, Mike
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.389-392
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    • 2009
  • Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

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PTC Behavior of Polymer Composites Containing Ionomers upon Electron Beam Irradiation

  • Kim, Jong-Hawk;Cho, Hyun-Nam;Kim, Seong-Hun;Kim, Jun-Young
    • Macromolecular Research
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    • v.12 no.1
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    • pp.53-62
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    • 2004
  • We have prepared polymer composites of low-density polyethylene (LDPE) and ionomers (Surlyn 8940) containing polar segments and metal ions by melt blending with carbon black (CB) as a conductive filler. The resistivity and positive temperature coefficient (PTC) of the ionomer/LDPE/CB composites were investigated with respect to the CB content. The ionomer content has an effect on the resistivity and percolation threshold of the polymer composites; the percolation curve exhibits a plateau at low CB content. The PTC intensity of the crosslinked ionomer/LDPE/CB composite decreased slightly at low ionomer content, and increased significantly above a critical concentration of the ionomer. Irradiation-induced crosslinking could increase the PTC intensity and decrease the NTC effect of the polymer composites. The minimum switching current (Ι$\sub$trip/) of the polymer composites decreased with temperature; the ratio of Ι$\sub$trip/ for the ionomer/LDPE/CB composite decreased to a greater extent than that of the LDPE/CB composite. The average temperature coefficient of resistance (${\alpha}$$\sub$T/) for the polymer composites increased in the low-temperature region.

Improved Sensor MAC Protocol for Wireless Sensor Network (무선 센서 네트워크를 위한 향상된 센서 MAC 프로토콜)

  • Lee, Ju-a;Kim, Jae-Hyun;Min, Seung-Wook
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.11A
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    • pp.1138-1146
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    • 2006
  • It is very important for the sensor network to save battery capacity. Switching active mode to sleep mode is used for S-MAC protocol and expiring timer before end of the active part is used for T-MAC in order to extend battery life span. We proposed IS-MAC (Improved Sensor MAC) which gives more energy efficiency than S-MAC and T-MAC To improve energy efficiency in sensor network, we used the threshold value in buffer to transmit data packet and proposed the method to reduce the number of control packets which cause extra battery consumption. Based on the analytical results, we found that the proposed IS-MAC protocol shows better performance than conventional MAC protocols.

Electrical Characteristics of and Temperature Distribution in Chalcogenide Phase Change Memory Devices Having a Self-Aligned Structure (자기정렬구조를 갖는 칼코겐화물 상변화 메모리 소자의 전기적 특성 및 온도 분포)

  • Yoon, Hye Ryeon;Park, Young Sam;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.6
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    • pp.448-453
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    • 2019
  • This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

Special Quantum Steganalysis Algorithm for Quantum Secure Communications Based on Quantum Discriminator

  • Xinzhu Liu;Zhiguo Qu;Xiubo Chen;Xiaojun Wang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.17 no.6
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    • pp.1674-1688
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    • 2023
  • The remarkable advancement of quantum steganography offers enhanced security for quantum communications. However, there is a significant concern regarding the potential misuse of this technology. Moreover, the current research on identifying malicious quantum steganography is insufficient. To address this gap in steganalysis research, this paper proposes a specialized quantum steganalysis algorithm. This algorithm utilizes quantum machine learning techniques to detect steganography in general quantum secure communication schemes that are based on pure states. The algorithm presented in this paper consists of two main steps: data preprocessing and automatic discrimination. The data preprocessing step involves extracting and amplifying abnormal signals, followed by the automatic detection of suspicious quantum carriers through training on steganographic and non-steganographic data. The numerical results demonstrate that a larger disparity between the probability distributions of steganographic and non-steganographic data leads to a higher steganographic detection indicator, making the presence of steganography easier to detect. By selecting an appropriate threshold value, the steganography detection rate can exceed 90%.

Forecasting Substitution and Competition among Previous and New products using Choice-based Diffusion Model with Switching Cost: Focusing on Substitution and Competition among Previous and New Fixed Charged Broadcasting Services (전환 비용이 반영된 선택 기반 확산 모형을 통한 신.구 상품간 대체 및 경쟁 예측: 신.구 유료 방송서비스간 대체 및 경쟁 사례를 중심으로)

  • Koh, Dae-Young;Hwang, Jun-Seok;Oh, Hyun-Seok;Lee, Jong-Su
    • Journal of Global Scholars of Marketing Science
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    • v.18 no.2
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    • pp.223-252
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    • 2008
  • In this study, we attempt to propose a choice-based diffusion model with switching cost, which can be used to forecast the dynamic substitution and competition among previous and new products at both individual-level and aggregate level, especially when market data for new products is insufficient. Additionally, we apply the proposed model to the empirical case of substitution and competition among Analog Cable TV that represents previous fixed charged broadcasting service and Digital Cable TV and Internet Protocol TV (IPTV) that are new ones, verify the validities of our proposed model, and finally derive related empirical implications. For empirical application, we obtained data from survey conducted as follows. Survey was administered by Dongseo Research to 1,000 adults aging from 20 to 60 living in Seoul, Korea, in May of 2007, under the title of 'Demand analysis of next generation fixed interactive broadcasting services'. Conjoint survey modified as follows, was used. First, as the traditional approach in conjoint analysis, we extracted 16 hypothetical alternative cards from the orthogonal design using important attributes and levels of next generation interactive broadcasting services which were determined by previous literature review and experts' comments. Again, we divided 16 conjoint cards into 4 groups, and thus composed 4 choice sets with 4 alternatives each. Therefore, each respondent faces 4 different hypothetical choice situations. In addition to this, we added two ways of modification. First, we asked the respondents to include the status-quo broadcasting services they subscribe to, as another alternative in each choice set. As a result, respondents choose the most preferred alternative among 5 alternatives consisting of 1 alternative with current subscription and 4 hypothetical alternatives in 4 choice sets. Modification of traditional conjoint survey in this way enabled us to estimate the factors related to switching cost or switching threshold in addition to the effects of attributes. Also, by using both revealed preference data(1 alternative with current subscription) and stated preference data (4 hypothetical alternatives), additional advantages in terms of the estimation properties and more conservative and realistic forecast, can be achieved. Second, we asked the respondents to choose the most preferred alternative while considering their expected adoption timing or switching timing. Respondents are asked to report their expected adoption or switching timing among 14 half-year points after the introduction of next generation broadcasting services. As a result, for each respondent, 14 observations with 5 alternatives for each period, are obtained, which results in panel-type data. Finally, this panel-type data consisting of $4{\ast}14{\ast}1000=56000$observations is used for estimation of the individual-level consumer adoption model. From the results obtained by empirical application, in case of forecasting the demand of new products without considering existence of previous product(s) and(or) switching cost factors, it is found that overestimated speed of diffusion at introductory stage or distorted predictions can be obtained, and as such, validities of our proposed model in which both existence of previous products and switching cost factors are properly considered, are verified. Also, it is found that proposed model can produce flexible patterns of market evolution depending on the degree of the effects of consumer preferences for the attributes of the alternatives on individual-level state transition, rather than following S-shaped curve assumed a priori. Empirically, it is found that in various scenarios with diverse combinations of prices, IPTV is more likely to take advantageous positions over Digital Cable TV in obtaining subscribers. Meanwhile, despite inferiorities in many technological attributes, Analog Cable TV, which is regarded as previous product in our analysis, is likely to be substituted by new services gradually rather than abruptly thanks to the advantage in low service charge and existence of high switching cost in fixed charged broadcasting service market.

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Current-Voltage Characteristics with Substrate Bias in Nanowire Junctionless MuGFET (기판전압에 따른 나노와이어 Junctionless MuGFET의 전류-전압 특성)

  • Lee, Jae-Ki;Park, Jong-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.4
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    • pp.785-792
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    • 2012
  • In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor) (문턱전압 조절 이온주입에 따른 MCT (MOS Controlled Thyristor)의 스위칭 특성 연구)

  • Park, Kun-Sik;Cho, Doohyung;Won, Jong-Il;Kwak, Changsub
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.69-76
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    • 2016
  • Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

Traffic Management Scheme for Supporting QoS of VBR/ABR Services in ATM Switching Systems (ATM 스위칭 시스템의 VBR/ABR 서비스 품질 지원을 위한 트랙픽 관리 기법)

  • 유인태
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.8A
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    • pp.1160-1168
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    • 2000
  • This paper presents a real-time integrated traffic management (RITM) scheme that can effectively manage variable bit rate (VBR) and available bit rate (ABR) traffics having unpredictable characteristics in asynchronous transfer mode (ATM) networks. An unique feature of this scheme is that it has a special ATM cell control block which makes it possible to monitor bursty traffics in real-time so that the delay incurred to measure cell arrival rate is minimized. Additionally, the proposed scheme intends to dynamically reassign the leftover network resources to VBR/ABR connections without any deterioration in quality of service (QoS) of the existing connections. The RITM scheme has been verified to reliably monitor incoming traffics and to efficiently manage network resources by computer simulations. The capability of managing the incoming ATM traffics in real-time helps determine an optimal acceptable number of user connections for a given network condition. We can use this value as a threshold to protect the network from being congested and to find out a cost-effective buffer design method.

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TID and SEL Testing on PWM-IC Controller of DC/DC Power Buck Converter (DC/DC 강압컨버터의 PWM-IC 제어기의 TID 및 SEL 실험)

  • Lho, Young Hwan;Hwang, Eui Sung;Jeong, Jae-Seong;Han, Changwoon
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.41 no.1
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    • pp.79-84
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    • 2013
  • DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a PWM-IC (pulse width modulation-integrated circuit) controller, a MOSFET (metal-oxide semiconductor field effect transistor), inductor, capacitor, etc. It is shown that the variation of threshold voltage and the offset voltage in the electrical characteristics of PWM-IC increase by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 4 heavy ions applied for SEL (Single Event Latch-up) make the PWM pulse unstable. Also, the output waveform for the given input in the DC/DC converter is observed by the simulation program with integrated circuit emphasis (SPICE). TID testing on PWM-IC is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the PWM operation is studied at SEL testing after implementation of the controller board.