• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• Journal of Magnetics
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• v.5 no.3
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• pp.90-98
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• 2000

The change in the magnetic properties of a spin-valve multilayer with the structure IrMn (9 m)/CoFe (4 nm)/Cu (2.6 nm)/CoFe (2 nm)/NiEe (6 nm) is investigated as a function of the size and the aspect ratio. At a fixed aspect ratio (the length/width ratio) of 2, the magnetostatic interactions begin to affect the magnetic properties substantially at a spin-valve length of 5 $\mum$, and, at a length of 1 $\mum$, they become even more dominant. In the case of a fixed multilayer size (2.4 $\mum$) which is indicated by the sum of the length and the width, magnetization change occurs by continuous spin-reversal and M-H loops are characterized by no or very small hysteresis at aspect ratios smaller than unity, At aspect ratios greater than unity, magnetization change occurs by spin-flip resulting in squared hysteresis loops. A very large changes in the coercivity and the bias field is observed, and these results are explained by two separate contributions to the total magnetostatic interactions: the coercivity by the self-demagnetizing field and the bias field by the interlayer magnetostatic interaction field.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.593-599
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• 2003

The nanoparticle magnetite of which diameter was about 3 nm was synthesized in a homogeneous aqueous solution without a template. The synthesized magnetite nanoparticle was easily oxidized to maghemite in an ambient condition. The magnetic properties of the ferrite nanoparticle show superparamagnetism at room temperature and its blocking temperature is around 93 K. Modifying the sequential adsorption method of metal bisphosphonate, we have prepared a multilayer thin film of the ferrite nanoparticle on planar substrates such as glass, quartz and Si wafer. In this multilayer the ferrite nanoparticle layer and an alkylbisphosphonate layer are alternately placed on the substrates by simple immersion in the solutions of the ferrite nanoparticle and 1, 10-decanediylbis (phosphonic acid) (DBPA), alternately. This is the first example, as far as we know, of nanoparticle/alkyl-bisphosphonate multilayer which is an analogy of metal bisphosphonate multilayer. UV-visible absorption and infrared reflection-absorption studies show that the growth of each layer is very systematic and the film is considerably optically transparent to visible light of 400-700 nm. Atomic force microscopic images of the film show that the surface morphology of the film follows that of the substrate in μm-scale image and the nanoparticle-terminated surface is differentiated from the DBPA-terminated one in nm-scale image. The magnetic properties of this ferrite/DBPA thin film are almost the same as those of the ferrite nanoparticle powder only.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.695-698
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• 2017

ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35 % at $300^{\circ}C$). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ${\sim}2.6{\times}10^{-5}{\Omega}cm$ (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65 % ~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.420-423
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• 2008

The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.127-130
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• 2005

The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• 한국전기화학회:학술대회논문집
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• 2004.04a
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• pp.17-17
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• 2004

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.439-454
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• 1993

The phase sequence of codeposited Co-Si alloy and Co/si multilayer thin film was investigated by differential scanning calormetry(DSC) and X-ray diffraction (XRD) analysis, The phase sequence in codeposition and codeposited amorphous Co-Si alloy thin film were CoSilongrightarrow Co2Si and those in Co/Si multilayer thin film were CoSilongrightarrowCo2Silongrightarrow and CoSilongrightarrowCo2Si longrightarrowCoSilongrightarrowCoSi2 with the atomic concentration ration of Co to Si layer being 2:1 and 1:2 respectively. The observed phase sequence was analyzed by the effectvie heat of formatin . The phase determining factor (PDF) considering structural facotr in addition to the effectvie heat of formation was used to explain the difference in the first crystalline phase between codeposition, codeposited amorphous Co-Si alloy thin film and Co/Si multilayer thin film. The crystallinity of Co-silicide deposited by multitarget bias cosputter deposition (MBCD) wasinvestigated as a funcion of deposition temperature and substrate bias voltage by transmission electron microscopy (TEM) and epitaxial CoSi2 layer was grown at $200^{\circ}C$ . Parameters, Ear, $\alpha$(As), were calculate dto quantitatively explain the low temperature epitaxial grpwth of CoSi2 layer. The phase sequence and crystallinity had a stronger dependence on the substrate bias voltage than on the deposition temperature due to the collisional daxcade mixing, in-situ cleannin g, and increase in the number of nucleation sites by ion bombardment of growing surface.