• 한국광학회지
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• 제31권6호
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• pp.321-327
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• 2020

기판 위에 코팅된 박막의 빛 반사 특성에 대해 연구하였다. 입사 매질로 굴절률이 큰 프리즘을 사용하여 박막/기판 계의 내부 전반사 현상과 공기/박막/기판 계가 이루는 도파로로 빛이 결합되어 들어가는 현상을 종합적으로 비교, 연구하였다. 박막의 굴절률이 기판의 굴절률보다 큰 경우에는 빛의 입사각을 증가시켜 나가면 먼저 기판에 의한 전반사가 일어나고, 그 이후 도파로 모드를 맞추는 좁은 각 영역에서 반사율이 떨어지는 현상을 볼 수 있으며, 이것을 이용하여 박막의 굴절률과 두께를 정확히 측정할 수 있다. 반면에 박막의 굴절률이 기판의 굴절률보다 작은 경우에는 도파로 모드가 존재하지 않는다. 이 경우 덩어리 매질에서처럼 뚜렷하지는 않지만 박막에 의한 전반사가 간섭무늬를 동반하여 나타난다. 본 연구에서는 프리즘/박막/기판 구조에서 일어나는 반사 현상을 전반적으로 관측하고 분석하여, 두 경우 모두 박막의 굴절률을 측정할 수 있는 가능성을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• 대한전자공학회논문지SD
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• 제43권5호
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• pp.11-16
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• 2006

본 연구는 SiOC 박막의 비정질 정도와 유전상수와의 상관성에 관하여 정리하고 있다. 고밀도 플라즈마 CVD 방법에 의해 증착된 SiOC 박막은 bistrimethyl- silylmethane와 산소가 혼합된 개스 소스의 유량비를 다르게 하였다. 증착된 박막과 $400^{\circ}C$ 열처리된 박막은 XRD분석방법을 적용하여 비정질도를 유추하였다. 적량분석을 위해서 각 시료들의 회절패턴을 푸리에 해석에 의해 동경분포함수로 변환하고 비교하였다. 열처리한 박막의 비정질도는 증착한 박막에 비하여 결정도가 높았다. 유량비에 따라서 유전상수가 변하였으며, 유전상수는 열처리 후 비정질도가 가장 큰 박막에서 가장 낮게 나타났다.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• ETRI Journal
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• 제39권3호
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• pp.390-397
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• 2017

In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1487-1489
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• 2001

The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

• 한국세라믹학회지
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• 제41권4호
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• pp.277-283
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• 2004

Plasma Display Panel(PDP) 상판용 투명유전체의 green sheet를 제조코자 투명유전체 슬러리의 분산특성 및 유기물의 함량과 조성비에 따른 밀도와 기계적 특성을 연구하였다. 비수계 시스템에서 슬러리의 완전분산을 위한 분산제의 종류와 분산제의 양을 결정하기 위해 침강실험, 점도측정을 행하여 최적의 분산조건을 구하였다. 조성물 변수로서 투명유전체조성 분말/(투명유전체조성 분말＋유기물)의 비와 결합제/(결합제＋가소제)의 비를 각각 변화시켜 green sheet를 제조하였다. 제조된 tape casting 슬러리의 대부분은 의가소성(pseudoplastic) 거동을 보이는데, 의가소성 거동은 shear thinning의 효과를 가지는 것으로 기술 할 수 있다. 각각의 조성을 가지는 슬러리는 모두 전단속도가 증가함에 겉보기 점도가 감소하는 shear thinning 효과를 보여 주었다. Green sheet의 특성을 조사한 결과 유기물의 함량 및 조성이 green sheet의 밀도와 기계적 특성을 결정하는 중요한 인자가 되었다.

• 전기학회논문지
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• 제56권4호
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• pp.751-755
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• 2007

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.