• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.135-136
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• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.96-99
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• 1993

Electrical properties of the Thin Film Transistor(TFT) electrode metal films were investigated through the Test Elements Group(TEG) experiment. The main purpose of this investigation was to characterize the electrical resistance properties of patterned metal films with respect to the variations of film thickness and TEG metal line width. Aluminum(Al), Tantalum(Ta) and Chromium(Cr) that are currently used as TFT electrode films were selected as the probed metal films. To date, no work in the electrical characterizations of patterned electrodes of a-Si TFT was accomplished. Bulk resistance$(R_b)$, sheet resistance$(R_s)$, and resistivities($\rho$) of TEG patterned metal lines were obtained. Electrical continuity test of metal film lines was also performed in order to investigate the stability of metallization process. Almost uniform-linear variations of the electrical properties with respect to the metal line displacements was also observed.

• Journal of ILASS-Korea
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• v.6 no.4
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• pp.14-21
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• 2001

Rotary atomizer is widely used in practical application ranging from combustion, cooling, spray drying, agriculture, chemical system. Rotary cup atomizer has some advantages such as extreme versatility and liquid atomization successfully varying widely in viscosity. In rotary atomization, the feed liquid is centrifugally accelerated to high velocity and the liquid extends over the rotating surface as a thin film before being discharged into an atmosphere. The degree of rotary atomization depends upon peripheral speed, feed rate, liquid properties and atomizer design. An important asset is that thickness and uniformity of the liquid sheet can readily be controlled by regulating the liquid flow rate and the rotational speed. LDPA(Laser Diffraction Particle Analyser) and image aquisition system are used to measure drop size distribution and spray pattern. The atomization characteristics of the rotary cup atomizer is investigated experimentally by varing the liquid feed rate, rotary cup speed and air velocity for atomization. As a results, the effect of air velocity on the atomization characteristics such as drop size and spray uniformity is considerably greater than variation of those with liquid feed rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.85-88
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• 1999

We fabricated resistive superconducting fault current lmiters based on YBa$_2$Cu$_3$O$_{7}$ thin films and investigated their quench propagation characteristics. The YBa$_2$Cu$_3$O$_{7}$ film was coated with a gold layer and patterned into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents of various fault angles and amplitudes. The quench propagation characteristics were explained based on the heat transfer within the film as well as between the film and the surrounding liquid nitrogen. The quench completion time strongly depended on the potential fault current. It was 1 msec at the peak fault current of 76 A/peak/ and corresponding quench propagation speed was 43 m/sec (film cross section: 4 x 10$^{-6}$ $\textrm{cm}^2$).

• Clean Technology
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• v.27 no.3
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• pp.217-222
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• 2021

Although monolayer black phosphorus (BP) and few-layer BP nanosheets (NSs) have been extensively studied as promising alternatives to graphene, research has focused primarily on atomically thin-layered BP in an isolated form. In order to realize the practical applications of BP-related devices, a BP film based on continuous networking of few-layer BP NSs should be developed. In this study, a transparent BP film with high quality was fabricated via a vacuum filtration method. An oxygen-free water solvent was used as an exfoliation medium to avoid significant oxidation of the few-layer BP NSs in liquid-phase exfoliation. The exfoliation efficiency from bulk BP to the few-layer BP NSs was estimated at 22%, which is highly efficient for the production of continuous BP film. The characteristics of the high-quality BP film were determined as 98% transparency, minimum oxidation of 18%, structural stability, and an appropriate bandgap of about 1.8 eV as a semiconductor layer. In order to demonstrate the potential of the BP film for photocatalytic activity, we performed photoelectrochemical water oxidation of the transparent BP film. Although its performance should be improved for practical applications, the BP film could function as a photoanode, which offers a new potential semiconductor in water oxidation. We believe that if the BP film is adequately engineered with other catalysts the photocatalytic activity of the BP film will be improved.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.8
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• pp.945-956
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• 1999

This work reports a set of approximate analytical solutions describing the initial transient process of close-contact melting between a rectangular parallelepiped solid and a flat plate on which either constant temperature or constant heat flux is imposed. Not only relative motion of the solid block tangential to the heating plate, but also the density difference between the solid and liquid phase is incorporated in the model. The thin film approximation reduces the force balance between the solid weight and liquid pressure, and the energy balance at the melting front into a simultaneous ordinary differential equation system. The normalized model equations admit compactly expressed analytical solutions which include the already approved two-dimensional solutions as a subset. In particular, the normalized liquid film thickness is independent of all pertinent parameters, thereby facilitating to define the transition period of close-contact melting. A unique behavior of the solid descending velocity due to the density difference is also resolved by the present solution. A new geometric function which alone represents the three-dimensional effect is introduced, and its properties are clarified. One of the representative results is that heat transfer is at least enhanced at the expense of the increase in friction as the cross-sectional shape deviates from the square under the same contact area.

• Progress in Superconductivity
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• v.5 no.2
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• pp.118-123
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• 2004

We investigated quench distribution in AU/YBCO thin film meander lines with a heater. Quench distribution during faults is important for superconducting fault current limter applications, because uniform quench allows application of higher voltages across the meander lines. AU/YBCO thin films grown on sapphire substrates were patterned into meander lines by photolithography. Gold films grown on the rear sides of the substrates were also patterned into meander lines, and used as heaters. Meander lines on the front and the rear sides were connected in parallel. The meander lines were subjected to simulated AC fault currents for quench measurements during faults. They were immersed in liquid nitrogen during the experiment for effective cooling. Resistance of the AU/YBCO meander lines initially increased more rapidly with the rear heater than without, and consequently the fault current was limited more. The resistance subsequently became similar, The resistance distribution was more uniform with the heater, especially during the initial quench. Quench was completed more uniformly and significantly earlier. This resulted in uniform distribution of dissipated power. These results could be explained with the concept of quench propagation, which was accelerated by heat transfer across the substrate from the rear heater.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.448-448
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.33-41
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• 2022

Recent necessities of research have emerged about soft interconnection technologies for stable electric connections in flexible electronics. Mechanical failure in conventional metal solder interconnection can be solved as soft interconnections based on a small elastic modulus and a thin thickness. To enable stable electric connection while improving mechanical properties, highly conductive materials be thinned or mixed with a material that has a small elastic modulus. Representative soft interconnection technologies such as thin-film metallization, flexible conductive adhesives, and liquid metal interconnections are presented in this paper, and be focused on mechanical/electric properties improving strategies and their applications.