• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.297-300
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• 2006

The response surface modeling of the pretilt angle control using ion-beam (IB) alignment on nitrogen doped diamond-like carbon (NDLC) thin film layer is investigated. This modeling is used to analyze the variation of the pretilt angle under various process conditions. IB exposure angle and IB exposure time are considered as input factors. The analysis of variance technique is settled to analyze the statistical significance, and effect plots are also investigated to examine the relationships between the process parameters and the response. The model can allow us to reliably predict the pretilt angle with respect to the varying process conditions.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.48-53
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• 1996

We present a microscopic description for generation of 1/f noise in interfaces between cobalt thin film and silicon substrate. Along with surface resistance measurements and transmission electron diffraction observations. 1/f noise power spectral density has been measured for the interfacial structures at the liquid nitrogen temperature . The cobalt films have been deposited by the electron-beam evaporation technique onto p-type (100) silicon in the high vacuum condition. The measured noise power spectral density shows highest magnitude near the structural transition and metallization transition region. The noise magnitude rapidly decreased after the cobalt silicide nucleation. The noise parameter is concluded to be originated form the structural fluctuations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.291.2-291.2
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• 2013

Growth behavior of b-Ga2O3 nanowires (NWs) on sapphire(0001) substrates during radio-frequency magnetron sputtering is reported. Upon fabrication, flat thin films grew initially, subsequent to which, NW bundles were formed on the surface of thin film with increasing film thickness. This transition of the growth mode occurred only at temperatures greater than ${\sim}450^{\circ}C$. The b-Ga2O3 NWs were grown through the self-catalytic vapor-liquid-solid mechanism with self-assembled Ga seeds. Secondary growth of NWs, which occurred from the sides of primary NWs resulting in branched NW structures, was also observed. Finally, the room temperature photoluminescence properties of as-grown and annealed b-Ga2O3 NW samples were investigated.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.11
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• pp.1010-1015
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• 2012

In this study, a thin-film thermo-electrochemical cell that directly converts waste thermal energy into electrical energy was fabricated. Electrical conductivity of conducting carbon fiber, which was used as flexible electrode, was increased through coating of carbon nanotube, and resistance of the CNT-coated fiber electrode was not changed even after bending test with various curvatures. Maximum output power of the thermocell was increased quadratically with the temperature difference, and showed a value of about 2.5 mW/kg at temperature difference of $3.4^{\circ}C$. As a result of discharge test for 12 hours, it is confirmed that the cell can operates continuously. And thin-film thermocell wrapped around a pipe with hot liquid flowing within was demonstrated. Internal resistance of the cell was decreased with various curvature of heat pipe, and maximum output power was increased by 30 %. Therefore, the cell can be applied to various heat source.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.589-594
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• 1997

Superconducting $YBa_2Cu_3O_y$ thin films were prepared at the deposition temperature of $650^{\circ}C$ under oxygen partial pressure of 0.0126 Torr on Si(111) and SrTiO3(100) substrates by chemical vapor deposition technique using $\beta$-diketonates of Y, Ba and Cu as source materials. The thin film fabricated on $SrTiO_3(100)$ had a $T_{c,onset}$ of 91K and $T_{c.0}$ of 87K. The thin film prepared on Si(111) had a $T_{c,onset}$ of 91K but didn't have a $T_{c.0}$ at liquid nitrogen boiling point(77.3K). Dense and two-dimensionally well alligned microstructure was developed for the film deposited on $SrTiO_3(100)$ substrate whereas a relatively porous and randomly distributed microstructure was developed for the film prepared on Si(111) substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.109-115
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• 2003

We Have fabricated a holographic polymer-dispersed liquid crystal (HPDLC) thin film, which is composed of multifunctional acrylate monomer blended with the nematic liquid crystal mixture, and then investigated the real-time diffraction efficiencies for various amounts of liquid crystals and applied AC electric fields. It is experimentally shown that the holographic gratings recorded in the HPDLC film can be reversibly erased and reconstructed by switching on and off an appropriate applied AC electric field. By use of these electro-optic properties we have developed bifocal holographic lenses having two different focal lengths of 30cm and 40 cm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1447-1449
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• 2009

We report the syntheses bis-(N,N-diethylaminoethyl) perylene-3,4,9,10-tetracarboxylic diimide (PDI) of lyotropic chromonic liquid crystal and it dissolves in photocurable ionic monomer solution. PDI-acrylic acid solution was observed whether liquid crystal phase appeared in each concentration. Thin film polarizer was prepared by simultaneously coating and aligning the solution of PDI-acrylic acid (in the chromonic nematic phase) onto glass substrates using a mechanical shearing force and was cured by irradiation of UV light. Also Photopatterned polarizer is manufactured by same process.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1558-1563
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• 2004

This work applies the nonequilibrium molecular dynamics simulation method to study a Lennard-Jones liquid thin film suspended in the vapor and calculates the thermal conductivity by linear response function. As a preliminary test, the thermal conductivity of pure argon fluid are calculated by nonequilibrium molecular dynamics simulation. It is found that the thermal conductivity decrease with decreasing the density. When both argon liquid and vapor phase are present, the effects of the system temperature on the thermal conductivity are investigated. It can be seen that the thermal conductivity of liquid-vapor interface is constant with increasing the temperature