• Title/Summary/Keyword: Thin liquid film

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EO Performances of the Ion Beam Aligned TN-LCD on a Diamond-like-Carbon Thin Film Surface

  • Hwang, Jeoung-Yeon;Jo, Yong-Min;Seo, Dae-Shik;Rho, Soon-Joon;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.497-499
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    • 2003
  • Electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the DLC thin film surface were studied. An excellent voltage-transmittance (VT) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for 1 min. Also, a faster response time for the ion beam aligned TN-LCD can be achieved with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

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Analysis of Sticking Coefficient in Bi-Superconducting Thin film (Bi 초전도 박막의 부착계수 해석)

  • 천민우;박용필;이성일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.997-1002
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    • 2002
  • BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

The study of crystallization to Si films deposited using a sputtering method on a Mo substrate (Mo기판 위에 sputtering 법으로 성장된 Si 박막의 결정화 연구)

  • 김도영;고재경;박중현;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.36-39
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    • 2002
  • Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

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EO Performances for Ion-beam Aligned TN-LCD on a DLC Thin Film Layer

  • Jo, Yong-Min;Hwang, Jeoung-Yeon;Seo, Dae-Shik;Lee, Sang-Keuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.118-120
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    • 2002
  • Electro-optical (EO) characteristics of the ion beam (IB) aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the diamond-like carbon (DLC) thin film surface were studied. An excellent voltage-transmittance (V-T) curve of the ion beam aligned IN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for I min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

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Durability Improvement of Metal Convex Printing Plate for Securities Printing (유가증권 인쇄용 금속 볼록판의 내구성 향상에 관한 연구)

  • Lee, Hyok-Won;Kang, Young-Reep;Kim, Byong-Hyun
    • Journal of the Korean Graphic Arts Communication Society
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    • v.29 no.3
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    • pp.133-142
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    • 2011
  • We produce a photosensitive convex plate to research a Nickel metal relief printing plate using galvanic process. A Method for preparing DLC convex plate that is metalized on Nickel metal relief printing plate using CVD(Chemical Vapor Deposition) process and $N_2DLC$-convex plate that is DLC metalized thin film layer of $N_2$ plasma surface treatment are comprised. DLC thin film layers on Nickel surface are fragile. The results of the research indicate that the coefficient of friction on DLC metalized thin film layer is relatively low than Nickel surface and the durability of Nickel surface coated DLC metalized thin film layer is superior to Nickel surface. A relative evaluation of three form plate wetting properties using varnish liquid-drop plate indicates superior printing aptitudes for $N_2DLC$, DLC, Nichel plate order as above.

Analysis of Sticking Coefficient in BSCCO Thin Film (BSCCO 박막의 부착계수 해석)

  • Chun, Min-Woo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.252-255
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    • 2002
  • BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_{2}O_{3}$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_{2}O_{3}$.

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MODELING AND ANALYSIS ON THIN-FILM FLOW OVER A ROUGH ROTATING MAGNETIC DISK

  • Kim, Sung-Won;Moon, Byung-Moo
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.645-649
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    • 1995
  • The depletion of thin liquid films due to the combined effect of centrifugation, surface roughness, and air-shear has recently been studied. While surface roughness of a rotating solid disk can be represented by deterministic cures, it has been argued that spatial random processes provide a more realistic description. Chiefly because of surface roughness, there is an asymptotic limit of retention of a thin film flowing on the rotating disk. The aim of this article is to model the depletion of thin-film flow and analyze the interplay of centrifugation, surface tension, viscosity, air-shear, disjoining pressure, and surface roughness that affect the depletion of the film. Also, the robustness of stochastic description of surface roughness is examined.

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Properties of $Al_{2}O_{3}-SiO_{2}$ Films prepared with Metal Alkoxides

  • Soh, Dea-Wha;Park, Sung-Jai;Korobova E. Natalya
    • Journal of information and communication convergence engineering
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    • v.1 no.3
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    • pp.133-138
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    • 2003
  • The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

Dielectric $Al_2O_3-SiO_2$ Films from Metal Alkoxides

  • Soh, Deawha;Natalya, Korobova E.
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.10a
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    • pp.957-962
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    • 2003
  • The preparation of $Al_2$O$_3$-SiO$_2$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. for the preparation of thin, continuous $Al_2$O$_3$-SiO$_2$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_2$O$_3$-SiO$_2$ upon heating to 100$0^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

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Plastic Film Liquid Crystal Shutter and Its Application to 3D Stereoscopic Display

  • Kwon, Soon-Bum;Woo, Sung-Il;Im, Jang-Soon;Park, Seo-Kyu;Hwang, Won-Mi;Han, Jung-Hoon;Kim, Han-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.468-471
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    • 2003
  • We firstly report liquid crystal shutter based on plastic film and its application to 3D shutter for stereoscopic displays. Plastic liquid crystal shutters have remarkable advantages compared to conventional glass liquid crystal shutters. They are thin, light and non-breakable so that very comfortable 3D shutter eye-wear can be realized using them. The concepts, optical performances and reliability test results of plastic film liquid crystal shutters are presented.

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