• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.44-48
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• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.135-141
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• 2003

In arrayed waveguide grating (AWG) devices whose waveguides were composed of polymer with negative thermo-optic coefficient as overcladding, and silica with positive thermo-optic coefficient as both core and undercladding, we investigated the temperature dependence of the central wavelength using two-dimensional SFDM. From these results, it was confirmed that the temperature dependence can be nearly eliminated by adjusting the refractive index of the cladding and the thickness of the silica thin film upper-loaded on the core. Based on the numerical calculations, the AWG device with polymer overcladding was fabricated. and its optical characteristics were compared with those of the orginal silica AWG device. The introduction of polymer overcladding decreased the temperature dependence of the central wavelength from 0.0130 nm/$^{\circ}C$ to 0.0028 nm/$^{\circ}C$ without deteriorating the insertion loss and crosstalk characteristics.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.141-147
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• 2010

In this study, high-k oxide films like $Al_2O_3$, $TiO_2$, $HfO_2$ were deposited on Si, $SiO_2$/Si, GaAs wafers, and then the thermal conductivity was measured by using thermo-reflectance method which utilizes the reflectance variation of the film surface produced by the periodic temperature variation. The result shows that high-k oxide films with 50 nm thickness have high thermal conductivity of 0.80~1.29 W/(mK). Therefore, effectively dissipate the heat generated in the electric circuit such as CMOS memory device, and the heat transfer changes according to the micro grain size.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.166-174
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• 1993

Abstract The crack resistance of PSG(Phosphosilicate Glass) and PE-SiN(Plasma Enhanced CVD S${i_2}{N_4}$)films deposited on aluminium thin films on Si substrate was analyzed in this study. PSG was deposited by AP-CVD and PE- SiN by PE-CVD. All the films underwent repeated heat cycles at 45$0^{\circ}C$for 30 min. Crack formation and development were examined between each heat cycle. The crack behavior was found to be closely related to the stresses in the films. The stress induced by the difference in thermal expansion behavior between the passivation layers and underlying aluminum film may cause the crack. Crack resistance decreases as the thickness of PSG films increases due to the high tensile stress of the films. Phosphorus in the PSG films releases tensile stress and consequently the stress of the films tends to show compressive stress. As a result, crack resistance increased as the concentratin of P in the PSG films increased. Crack resistance in the PE-SiN films also increased with compressive stress. An experimental model to predict crack generation in the PSG and PE-SiN films during heat cycle was suggested.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.344-348
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• 2011

A layer of $TiO_2$ thin film less than ~200nm in thickness, as a blocking layer, was deposited by 13.56 MHz radio frequency magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/{I_3}^-$). The presented DSCs were fabricated with working electrode of F:$SnO_2$(FTO) glass coated with blocking $TiO_2$ layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited FTO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells. The, electrochemical impedances of DSCs using this electrode were $R_1$: 13.9, $R_2$: 15.0, $R_3$: 10.9 and $R_h$: $82{\Omega}$. The $R_2$ impedance related by electron movement from nanoporous $TiO_2$ to TCO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 5.97% ($V_{oc}$: 0.75V, $J_{sc}$: 10.5 mA/$cm^2$, ff: 0.75) and approximately 1% higher than general DSCs sample.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.4
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• pp.293-297
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• 2020

This paper tried to find the best conditions that could be applied to solar cells by deposition of CdS thin film on ITO glass using multiplex displacement sputter system. RF power was changed to 50W, 100W, and 150W and sputtering time was set to 10 minutes. As a result of the measurement of transmittance, the average transmittance in the area of 400 to 800 nm was measured from 60% to 80% and the best characteristic was measured at 150W at 84%. The band gap was also measured at 3.762eV at 50W, 4.037eV at 100W and 4.052eV at 150W. In XRD analysis, even as RF power was increased, it was observed as a structure called Wurtzite (hexagonal) of CdS. And as RF power increased, the particles were large and uniformly deposited, but at 100W the particles were densely composed and dense. And the thickness measurement showed that the RF power increased uniformly.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.69-77
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• 1996

In this paper, we fabricated the micro hotplate which consisted of a thin film heater(Pt/Cr bilayers) sandwiched with the thermal oxide and E-beam evaporated oxide. And we studied the electrical and the structural properties of Pt/Cr bilayers due to annealing temperature. When we compared the temperature measured from type k thermocouples with the temperature acquired from I.R. thermo-vision system according to the variations of emissivity, the emissivity of I-beam evaporated oxide was 0.5. The sheet resistance of Pt/Cr bilayers didn't depend on the Cr layer thickness, and it was considered as the existence of CrO between the Pt and the Cr layer. When the annealing temperature was increased from $500^{\circ}C$ to $700^{\circ}C$, the out-diffusions of Cr were increased(which was confirmed by AES depth profile) and the grain size of Pt(220) phase was enlarged also(analyzed by XRD and SEM photographs). From the results of XRD analysis and AES depth profile, the Pt/Cr bilayers annealed at $500^{\circ}C$ were more stable than any other cases in structural properties.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.280-285
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• 2016

In this study, we investigated the influences of potassium fluoride(KF) addition on the surface characteristics of plasma electrolytic oxidation(PEO) coating produced on Al alloy. The PEO of marine grade Al alloy(5083 grade) was conducted in KOH 1g/L solution adding different concentrations of KF(0, 1 and 2 g/L) under a galvanostatic regime. With KF addition, unusual behavior was observed on the voltage-time characteristic curves, which can be characterized by the following process: (i) initial rapid increase in voltage (ii) a short plateau after 1st breakdown (iii) gradual increase in voltage (iv) intermittent fluctuation of voltage after 2nd breakdown. The SEM observation revealed irregular surface morphology with KF addition, as compared with one formed without KF addition, which had a reticulate structure. The XRD analysis detected the formation of aluminium hydroxide fluoride hydrate($H_{4.76}Al_2F_{3.24}O_{3.76}$) on surface grown by PEO process with KF. Particularly, at very early stage of the process (~ 120 s), thin film was formed having nanoporous structure, and F element was confirmed on surface by EDS analysis. The thickness and surface roughness of the coating increased with increasing KF concentration. As a result, KF addition was found to be less beneficial influences on PEO of marine grade Al alloy, and therefore needs further research to improve its capability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.