• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.367-370
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• 2009

It is important to reduce a reflection of light as a solar cell is device that directly converts the energy of solar radiation to electrical energy in oder to improve efficiency of solar cells. The antireflection coating has proven effective in providing substantial increase in solar cell efficiency. This paper investigates the formation of thin film PSi(porous silicon) layer on the surface of crystalline silicon substrates without other ARC(antirefiection coating) layers. On the other hand the formation of $SO_{2}/SiN_x$ ARC layers on the surface of crystalline silicon substrates. After that, the structure of PSi and $SO_2/SiN_x$ ARC was investigated by SEM and reflectance. The formation of PSi layer and $SO_{2}/SiN_x$ ARC layers on the textured silicon wafer result about 5% in the wavelength region from 0.4 to $1.0{\mu}m$. It is achieved on the textured crystalline silicon solar cell that each efficiency is 14.43%, 16.01%.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.2-128.2
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• 2011

스테인레스 스틸 유연기판 위에 플라즈마 화학기상 증착법 (plasma enhanced chemical vapor deposition)을 이용하여 nip 구조의 미세결정질 실리콘 박막 태양전지 (microcrystalline silicon thin film solar cell)를 제조하고 i ${\mu}c$-Si:H광 흡수층과 p ${\mu}c$-Si:H 사이에 i a-Si:H 버퍼 층을 삽입하여 i/p 계면특성을 개선하고 이에 따른 태양전지 성능특성 변화를 조사하였다. ${\mu}c$-Si:H 박막으로 이루어진 i/p 계면에서의 구조적, 전기적 결함은 태양전지 내에서 생성된 캐리어의 재결합과 shunt resistance 감소를 초래하여 개방전압 (open circuit voltage) 및 곡선 인자 (fill factor)를 감소시키는 것으로 알려졌다. 제조된 미세결정질 실리콘 박막 태양전지는 SUS/Ag/ZnO:Al/n ${\mu}c$-Si:H/i ${\mu}c$-Si:H/p ${\mu}c$-Si:H 구조로 제작되었으며 i/p 계면 사이의 i a-Si;H 버퍼층 두께를 변화시키고 이에 따른 태양전지의 특성을 조사하였다. 태양전지의 구조적, 전기적 특성 변화는 Scanning Electron Microscope (SEM), UV-visible-nIR spectrometry, Photo IV와 Dark IV를 통하여 조사하였다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.10
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• pp.1019-1023
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• 2012

In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of $1cm{\times}1cm$ can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 $cm^{-1}$, which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of $10^{21}cm^{-3}$. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.

• Journal of the Korean Solar Energy Society
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• v.32 no.spc3
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• pp.179-184
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• 2012

This research on building Integrated Photovoltaic System replacing windows and doors with amorphous silicon thin film PV windows and doors installing same exact mount on Mock-up. The windows and doors should be installed in different angle and bearing so that we can analyse the amount of electricity from them. The objective of the research is to evaluate and investigate the relationship between factors(intensity of solar radiation, PV window surface temperature, incidence angle, and sky conditions) that affects performance of PV window and performance. The range and method of this research is to establish monitoring system and analysis the data from the monitoring system to evaluate the performance of PV windows that have thin film of solar battery. We should evaluate the insolation according to the position of PV window, output, and surface temperature according to months and seasons so that we can figure out the relationship between these. And we should investigate the relationship between performance and efficiency according to incidence angle and sky condition so that we can figure out the correlation between factors and performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.337-344
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• 2024

This work focuses on improving the light-harvesting efficiency of thin-film silicon solar cells through innovative multi-architecture surface modifications. To create a regular optical structure, a lithographic process was performed to form it on a glass substrate through various etching processes, from Etch-1 to Etch-3. AZO was deposited on top of the structures and re-etched to create a multi-architectural surface. These surface-modified structures improved the light absorption and overall performance of the solar cell through changes in optical and physical properties, which we will analyze. In addition, we investigated the effect of post-cleaning on the etched glass structures through EDX analysis to understand the mechanism of the etching action. The results of this study are expected to provide important guidelines for the design and fabrication of solar cells and other photovoltaic devices.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1595-1597
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• 2003

This paper presents the deposition of ${\mu}c$-Si:H thin-film and fabrication of a solar cell by VHF-PECVD method. The ${\mu}c$-Si:H thin films and pin-type solar cells are fabricated using multi-chamber cluster tool system. A 7.4% conversion efficiency was achieved from ${\mu}c$-Si:H thin film solar cells with total thickness less than $5{\mu}m$. The physical characteristic was measured by Raman spectroscopy, Solar cell characteristic was measured under AM1.5 illumination.