• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.72-76
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• 2020

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V^-1s^-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3328-3330
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• 1999

In this paper, the fabrication of a micro actuator with a micro electromagnet and an actuator diaphragm is presented. The micro electromagnet consists of a magnetic core and a micro inductive planar coil. The actuator diaphragm is the p+ silicon diaphragm on both sides of which magnetostrictive materials are deposited by sputtering. The micro electromagnet is fabricated by sputtering, evaporating, etching and electroplating. The magnetic flux density of the micro electromagnet is measured by using the gauss meter. The deflection of the actuator diaphragm is measured by using the laser vibrometer and optic microscope.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• 한국표면공학회지
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• 제50권5호
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• pp.392-397
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• 2017

The Young's modulus of a nanoscale titanium (Ti) thin-film was evaluated using a high-speed microcantilever resonating at the megahertz frequency in the present study. A 350 nm thick Ti film was deposited on the surface of a silicon microcantilever, and the morphology of the film was analyzed using the atomic force microscopy. The microcantilever was excited to resonate using an ultrasonic pulser that generates tone burst signals and the resonance frequency shift induced by the deposition of Ti was measured using a Michelson interferometer. The Young's modulus was determined through a modal analysis using the finite element method and the result was validated by the nanoindentation testing, showing good agreement within a relative error of 1.0%. The present study proposes a nanomechanical characterization technique with enhanced accuracy and sensitivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.130-130
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• 2010

Thin Si films were grown by a plasma-enhanced chemical vapor deposition (PECVD, SNTEK, Korea) system. Two different deposition condition were applied and formed a fully amorphous Si (a-Si) film and a micromorph mixing of microcrystalline Si (mc-Si) and a-Si film. Under one sun illumination, the micromorph device provided the enhanced open circuit voltage and fill factor values. It presents the fabrication of the micromorph Si film and the a-Si film by modulating a deposition condition. The performances of the Si thin film Schottky solar cells are discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.108-112
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• 2012

Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 90 % of the market, despite the development of a variety of thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon photovoltaic remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner thickness of silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials of different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With lower paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 130 micron thickness of the wafer even though the conversion efficiency decrease of 0.5 % occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al paste application.

• 한국결정성장학회지
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• 제20권6호
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• pp.254-261
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• 2010

본 연구에서는 다결정 실리콘 태양전지 응용을 위한 다결정 실리콘 씨앗층의 제조와 그의 특성에 관한 연구를 수행하였다. 다결정 실리콘 씨앗층은 glass/Al/$Al_2O_3$/a-Si 구조를 이용하여 aluminum-induced layer exchange(ALILE) 고정으로 제조하였으며, 자연산화막부터 50 nm까지 다양한 크기로 $Al_2O_3$ 막두께를 변화시켜 알루미늄 유도 결정화 공정에서 막의 두께가 결정화 특성 및 결정결함, 결정크기에 미치는 영향에 대하여 조사하였다. 연구결과, ALILE 공정으로 생성된 다결정 실리콘막의 결함은 $Al_2O_3$ 막의 두께가 증가할수록 함께 증가한 반면, 결정화 정도와 결정입자의 크기는 $Al_2O_3$막의 두께가 증가할수록 감소하였다. 본 실험에서는 16 nm 두께 이하의 앓은 $Al_2O_3$ 막의 구조에서 평균 약 $10\;{\mu}m$ 크기의 sub-grain 결정립을 얻었으며, 결정성은 <111> 방향의 우선 배향성 특성을 보였다.

• 한국자기학회지
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• 제16권1호
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• pp.75-78
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• 2006

텅스턴-보론-카본질소 화합물 박막(W-B-C-N)을 만들기 위하여 박막내에 보론과 카본 그리고 질소의 불순물을 주입한 다음 결정구조를 조사하였으며, 이러한 박막의 식각 특성을 조사하기 위하여 고온에서 열처리한 다음 Cu박막을 W-B-C-N 박막위에 증착한 다음에 열처리하였고 여기에서 열적인 특성을 조사하였다. $1000\;{\AA}$의 박막을 RF magnetron sputtering방법을 이용하여 증착한 후에 박막의 전기적구조적인 특성을 측정하였으며, scratch test를 통해 박막의 결합력을 측정하였고, XRD측정을 통하여 결정성을 조사하였으며, 열처리한 후 etching을 하여 nomarski 현미경을 통하여 확산방지막의 안정성을 조사하였다. 이로부터 확산방지막내의 보론과 카본 질소 등의 불순물이 들어감에 따라 Cu가 Si 속으로 얼마나 들어가는가를 효과적으로 조사하였다. W-B-C-N 확산방지막의 역할은 $850^{\circ}C$까지 고온 열처리를 하는 경우에 Cu 원자가 Si 속으로 확산되어 나가는 것을 효과적으로 방지하는 것을 알 수 있었다. 텅스텐-보론-카본질소 화합물 박막의 비저항은 질소 가스의 유량비를 조절함으로써 쉽게 조절할 수 있었으며, 텅스텐-보론-카본-질소 화합물 박막은 Cu 확산방지막으로 적용했을 때 적절한 질소 농도가 들어간 확산방지막에서는 효과적으로 Cu의 확산을 방지하는 것을 알 수 있었다.