• 한국태양에너지학회 논문집
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• 제32권spc3호
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• pp.194-198
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• 2012

Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 80% of the market, despite the development of various thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon materials remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner the silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials with different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With less amount of paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 120 micron thickness of the wafer even though the conversion efficiency decrease by 0.5% occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al layer application.

• 한국표면공학회지
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• 제53권5호
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• 한국재료학회지
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• 제13권2호
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• pp.111-114
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• 2003

Effects of substrate materials on the microstructure and the sensitivity of $SnO_2$thin film gas sensors have been studied. Various substrates were studied, such as oxidized silicon, sapphire, polished alumina, and unpolished alumina. It was observed that strong correlation exists between the electrical resistance and the CO gas sensitivity of the manufactured sensors and the surface roughness of $SnO_2$thin films, which in turn was related to the surface roughness of the original substrates. X$SnO_2$thin film gas sensor on unpolished alumina with the highest surface roughness showed the highest initial resistance and CO gas sensitivity. The transmission electron microscopy observation indicated that shape and size of the columnar microstructure of the thin films were not critically affected by the type of substrates.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2182-2187
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• 2007

The relative contributions of phonon and electron to the thermal conductivity of silicon film with varying doping density are evaluated from the modified electron-phonon interaction model, which is applicable to the micro/nanoscale simulation of energy transport between energy carriers. The thermal conductivities of intrinsic silicon layer thicknesses from 20 nm to 500 nm are calculated and extended to the variation in n-type doping densities from 1.0 ${\times}$ $10^{18}$ to 5.0 ${\times}$ $10^{20}$ $cm^{-3}$, which agree well with the experimental data and theoretical model. From simulation results, the phonon and electron contributions to thermal conductivity are extracted. The electron contribution in the silicon is found to be not negligible above $10^{19}$ $cm^{-3}$, which can be classified as semimetal or metal by the value of its electrical resistivity at room temperature. The thermal conductivity due to electron is about 57.2% of the total thermal conductivity at doping concentration 5.0 ${\times}$ $10^{20}$ $cm^{-3}$ and silicon film thickness 100 nm.

• 한국정보통신학회논문지
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• 제11권11호
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• pp.2095-2099
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• 2007

본 연구에서는 LCD, 이미지 센서 등의 개별 소자인 비정질 실리콘 박막 트랜지스터에서 게 이트 유전층 및 절연층으로 사용되는 비정질 질화 실리콘 박막을 사일랜($SiH_4$) 및 암모니아가스를 사용해서 PECVD(Plasma Enhanced Chemical Vapor Deposition) 진공 증착장비로 최적의 비정질질화실리콘 박막 증착 조건을 확립한다. 먼저 반응실의 진공도, rf 전력, $SiH_4$ 및 질소 그리고 암모니아가스의 flow rate를 변화시키면서 형성된 박막의 특성을 조사한다. 계속해서 다른 변수를 고정시킨 상태에서 rf 전력을 변화시키고 다음에는 반응실의 진공도 등을 변화시켜 최적의 증착조건을 확립한다. 이렇게 확립된 증착조건을 사용하여 비정질질화실리콘박막을 제작하여 특성을 측정한 결과 우수한 성능을 나타냈음을 확인하였다.

• 한국표면공학회지
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• 제33권2호
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• pp.77-86
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• 2000

In this study effects of La starting compounds and substrates on the densification of (P $b_{0.92}$L $a_{0.05}$)Ti $O_3$ thin films were investigated. After the heat treatment on platinized silicon at $650^{\circ}C$ for 30min thickness of PLT(i) thin films (from La-isopropoxide) shrank by 27%, while 33% reduction occurred for PLT (a) thin films (from La-acetate). These PLT(i) films showed less densified surface microstructure compared to the PLT (a) . Lower shrinkage of the films on platinized silicon than on bare silicon (41% and 40% for PLT (i) and PLT (a) respectively) is attributed to the earlier development of crystallinity in the film, which arrests film densification. In order to maximize sintering before crystallization, heat treatment at $400^{\circ}C$ for 3 hours followed by $650^{\circ}C$ for 30 min was attempted. This method increased the shrinkage of the PLT (i) and PLT (a) films two times and 1.5 times as much as that observed for the films heat treated at $650^{\circ}C$ for 30min, respectively. FTIR results indicated that first pyrolysis in the film is associated with the burning of acetate ligands. Condensation reaction between OHs was found to occur preferentially between $350^{\circ}C$ and $450^{\circ}C$, whereas majority of polycondensation between ROH-OH appears to occur until $300^{\circ}C$ and be completed below $450^{\circ}C$.EX>.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• 한국태양에너지학회 논문집
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• 제32권spc3호
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• pp.179-184
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• 2012

This research on building Integrated Photovoltaic System replacing windows and doors with amorphous silicon thin film PV windows and doors installing same exact mount on Mock-up. The windows and doors should be installed in different angle and bearing so that we can analyse the amount of electricity from them. The objective of the research is to evaluate and investigate the relationship between factors(intensity of solar radiation, PV window surface temperature, incidence angle, and sky conditions) that affects performance of PV window and performance. The range and method of this research is to establish monitoring system and analysis the data from the monitoring system to evaluate the performance of PV windows that have thin film of solar battery. We should evaluate the insolation according to the position of PV window, output, and surface temperature according to months and seasons so that we can figure out the relationship between these. And we should investigate the relationship between performance and efficiency according to incidence angle and sky condition so that we can figure out the correlation between factors and performance.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.708-713
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.98-103
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• 2016

The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro- and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.