• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.218-221
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• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

• Electronic Materials Letters
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• 제14권6호
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• pp.749-754
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• 2018

Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.776-782
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• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• Journal of Mechanical Science and Technology
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• 제18권1호
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• pp.12-19
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• 2004

Using LSM (laser scanning method) , the radius of curvature due to thermal deformation in polyimide film coated on Si substrate is measured. Since the polyimide film shows viscoelastic behavior, i.e., the modulus and deformation of the film vary with time and temperature, we estimate the relaxation modulus and the residual stresses of the polyimide film by measuring the radius of curvature and subsequently by performing viscoelastic analysis. The residual stresses relax by an amount of 10％ at 100$^{\circ}C$ and 20% at 150$^{\circ}C$ for two hours.

• 한국표면공학회지
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• 제29권3호
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• pp.157-162
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• 1996

The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.76-80
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• 2005

In this paper, a miniaturized ring hybrid circuit is characterized based on a thin film microstrip (TFMS) on low-resistivity silicon. In order to obtain low-loss characteristics, a polyimide layer with 50 $\mu$m thickness is spin-coated onto the silicon to be used for the substrate. First, propagation characteristics of TFMS lines consisting of the ring hybrid circuit are presented. Then, a ring hybrid circuit based on TFMS is featured by employing the triple concentric circle approach for miniaturization. Triple concentric circle lines with $\lambda$$_{g}$/4 or 3$\lambda$$_{g}$/4 line lengths are implemented on the surface of the polyimide by circularly meandering to reduce the circuit size of the designed ring hybrid. Good agreement between measured and simulated results is obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.277-280
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• 1995

We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB mettled has known as main technology of information society in 21C, because it is nut only free oriention and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properities of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analizing rind measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically rind experimentally its possibility in range of 10Hz∼ 1MHz through its frequency characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.244-247
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• 1996

We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB method has known as main technology of information society in 21C, because it is not only free orientation and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properties of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analyzing and measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically and experimentally its possibility in range of 10Hz∼lMHz through its frequency characteristics.

• 마이크로전자및패키징학회지
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• 제10권2호
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• pp.39-47
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• 2003

감광성 폴리이미드 위에 Cr을 RF 바이어스 스퍼터링 및 RF클리닝 후 DC 스퍼터링한 Cr/폴리이미드의 계면을 TEM으로 관찰하였다. RF power 밀도를 $0.13W/cm^2$에서 $2.12W/cm^2$로 증가시키면서 RF클리닝을 실시한 결과 폴리이미드의 에칭 양상이 둥근 모양에서 뾰족한 모양으로 변하였고 이방성 에칭으로 인해 거칠기가 크게 증가하였다. RF 바이어스 스퍼터링의 경우 RF power를 올리는 동안 RF 클리닝에 의해 폴리이미드가 에칭되었고, 에칭된 부분에 Cr이 증착된 계면을 단면으로 관찰한 결과 Cr과 폴리이미드가 겹쳐져서 혼합된 것처럼 보였다. 그러나 RF power를 올리는 시간을 단축시켜 Cr을 바이어스 스퍼터링했을 때에는 계면이 분명하게 관찰되어 Cr의 implantation이 일어나지 않았음을 알 수 있었다. RF 클리닝한 Cu/Cr/Polyimide를 필 테스트한 결과 짧은 시간의 RF 클리닝으로도 접착력이 크게 증가하였다. 그러므로 RF power를 올리는 동안 실시되었던 RF 클리닝이 RF 바이어스 스퍼터링한 Cr/Polyimide의 접착력 향상에 영향을 주었을 것으로 예상된다.