Electronic Materials Letters

The Korean Institute of Metals and Materials (대한금속재료학회)
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Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

  • Han, Ki-Lim (Division of Materials Science and Engineering, Hanyang University) ;
  • Cho, Hyeon-Su (Division of Materials Science and Engineering, Hanyang University) ;
  • Ok, Kyung-Chul (Division of Materials Science and Engineering, Hanyang University) ;
  • Oh, Saeroonter (Division of Electrical Engineering, Hanyang University) ;
  • Park, Jin-Seong (Division of Materials Science and Engineering, Hanyang University)
  • Received : 2017.11.15
  • Accepted : 2018.06.10
  • Published : 2018.11.10
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Abstract

Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

Keywords

Acknowledgement

Supported by : MOTIE (Ministry of Trade, Industry and Energy), Hanyang University

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