• Transactions on Electrical and Electronic Materials
• /
• v.6 no.2
• /
• pp.57-62
• /
• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.1
• /
• pp.31-37
• /
• 1999

In this study, the thermal property and adhesion of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu /TaN /Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature for the multilayered Cu /TaN /Si specimen which was annealed at atmospheres of $H_2$and Ar gases, respectively. The adhesion strength of Cu films was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than that of sputtered Cu film and evaporated Cu film.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.36.2-36.2
• /
• 2010

A small amount of Na incorporated in $CuInSe_2$ (CIS) absorption layer has become widely accepted as a requirement for efficient polycrystalline CIS solar cells. However, there is ongoing argument on the role of sodium incorporated in the absorber. In this paper, CIS absorption layers have been deposited using the three-stage co-evaporation process on Mo coated non-Alkali glass substrates. The NaF was evaporated during the second-stage with various fluxes. This paper is focusing on differences of micro-structure and composition ratio of the absorber realized with different Na contents and the variation of electrical properties of the cells with the corresponding absorbers. The analytical results of x-ray diffraction (XRD) patterns, field emission scanning electron microscope (FE-SEM), energy dispersive spectroscopy (EDS) and current-voltage characteristics will be discussed to investigate the effect of NaF flux on the CIS absorber formation and its cell performance.

• Korean Journal of Materials Research
• /
• v.6 no.7
• /
• pp.678-683
• /
• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.4
• /
• pp.432-438
• /
• 2004

In this study, we investigated the WVTRs Properties of inorganic thin composite films(ITCFs) to be newly adopted as the passivation layer of the OLED to replace the inorganic compound material Because we thought that inorganic compound materials were limited to enhance the barrier property of thin film. So, ITCFs were fabricated by mixing the cooperated material with the base material. And then, ITCFs were deposited onto the plastic substrate using the electron beam evaporation system and the water vapor transmission rates(WVTRs) were measured using the Mocon equipment. As a result of the WVTR measurement, we could analyze the WVTR values for various ITCFs. ITCFs had a remarkably lower value than the inorganic compound film. Through the analysis of thin film, we can understand the crystal structure and mixed amount. Therefore, ITCFs can be used as the inorganic passivation layers of OLED with the inorganic compound film.

• Nuclear Engineering and Technology
• /
• v.54 no.8
• /
• pp.3117-3129
• /
• 2022

Deeply understanding the phase change of thin liquid sodium film inside wick pore is very important for further studying high-temperature sodium heat pipe's heat transfer. For the first time, the evaporation and condensation of thin liquid sodium film are investigated by the Lennard-Jones potential of molecular dynamics. Based on the startup and normal operation of the sodium heat pipe, three different cases are simulated. First, the equilibrium is achieved and the Mass Accommodation Coefficients of the three cases are 0.3886, 0.2119, 0.2615 respectively. Secondly, the non-equilibrium is built. The change of liquid film thickness, the number of gas atoms, the net evaporation flux (J_net), the heat transfer coefficient (h) at the liquid-gas interface are acquired. Results indicate that the magnitude of the J_net and the h increase with the basic equilibrium temperature. In 520-600 K (the startup of the heat pipe), the h has approached 5-6 W m^-2 K^-1 while liquid film thickness is in 11-13 nm. The fact shows that during the initial startup of the sodium heat pipe, the thermal resistance at the liquid-gas interface can't be negligible. This work is the complement and extension for macroscopic investigation of heat transfer inside sodium heat pipe. It can provide a reference for further numerical simulation and optimal design of the sodium heat pipe in the future.

• Journal of Surface Science and Engineering
• /
• v.26 no.1
• /
• pp.11-21
• /
• 1993

The relationship between the amount of deposited-Zn and the adhesion of Zn film has beend investigated. This study changed the mild steel substrate temperature range of $100^{\circ}C$~$250^{\circ}C$, with the aim of studying the adhesion of Zn film coated by PVD on substrates in 10-2~10-3torr and deoxidant gas atmospheres 50%H2~50%N2 and 75%H2+25%N2. The result revealed that the adhesion of Zn film was remarkably good in a 75% H2+25%N2 gas atmosphere as well as deoxidant time was short, and with increasing the substrate tempera-ture up to $250^{\circ}C$. Whiled the amount of deposition tended to increase linearly with time at constant evaporation temperature. It was almost constant when the substrate temperature was lower than $200^{\circ}C$, slightly decreased between $200^{\circ}C$ and $250^{\circ}C$ and significantly decreased at $300^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.5 no.7
• /
• pp.850-857
• /
• 1995

VO$_{x}$ and V$_{1-x}$ Sn$_{x}$O$_2$thin films were fabricated on a glass under various $O_2$pressure by reactive e-beam evaporation method. Thermochromism and transition temperatures of these thin films were examined by measuring spectral solar transmittances with spectrophotometer at various temperatures, and their stoichiometries were analyzed by RBS. Oxygen pressure of 5$\times$10$^{-5}$ . Torr was found to be optimum to fabricate near stoichiometric VO$_2$thin film by reactive e-beam evaporation. Rapid thermal annealing(RTA) was adopted to crystallize the thin films and annealing at 40$0^{\circ}C$ ~45$0^{\circ}C$ for 20 ~ 30 seconds was found to be the optimum annealing condition for the crystallization of VO$_2$thin film of 100nm-300nm thickness. 1~6 atomic percent of Sn was doped into VO$_2$thin films to fabricate V$_{1-x}$ Sn$_{x}$O$_2$thin films. These V$_{1-x}$ Sn$_{x}$O$_2$thin films showed distinct thermochromism and significantly higher transition temperatures than VO$_2$thin film.

• 한국신재생에너지학회:학술대회논문집
• /
• 2008.05a
• /
• pp.438-440
• /
• 2008

Effects of Ga contents of CIGS absorber layer on the performance of thin films solar cells were investigated. As Ga content increased, the grain size of CIGS films decreased presumably because Ga diffusion during 2nd stage of co-evaporation process is more difficult than In diffusion. Performances of corresponding solar cell show systematic dependence on Ga content in which open circuit voltage increases and short circuit current and fill factor decrease as Ga contents increases. At a optimal condition of Ga/(In+Ga)=0.27, the solar cell shows a conversion efficiency of 15.6% with $V_{OC}$ of 0.625 V, $J_{SC}$ of 35.03 mA/$cm^2$ and FF of 71.3%.

• Journal of Surface Science and Engineering
• /
• v.29 no.6
• /
• pp.851-856
• /
• 1996

Copper Phthalocyanine (CuPc) thin films were fabricated on the silicon wafers by plasma activated evaporation method and structural analysis were carried out with various spectroscopies. The CuPc films had dense and smooth morphology and they also showed good mechanical properties and chemical resistance. The main molecular structure of the CuPc, which is the conjugated aromatic heterocyclic ring structure, was maintained even in the plasma process. However, metal-ligand (Cu-N) bands were deformed by the plasma process and the structure became amorphous especially at higher process pressures. Oxygen impurities were incorporated in the film and carboxyl functional groups were formed at the peripheral benzene ring. The structure and morphology of the films were dependent on the process pressure but relatively irrespective of the RF power.